Vertical-cavity surface-emitting laser and manufacturing method thereof

Abstract

The invention discloses a vertical-cavity surface-emitting laser which comprises a substrate, a first Bragg reflector, a first limiting layer, an active region, a second limiting layer, a second Bragg reflector and an Ohmic contact layer which are arranged in a laminated manner, wherein the active region adopts a quantum well structure, a potential barrier layer is made of InGaAlAs, and a potential well layer is made of InGaAsN; a heavily-doped tunnel junction and a third limiting layer are also arranged between the second limiting layer and the second Bragg reflector; an oxidized limiting layer is also arranged in the second limiting layer. The invention also provides a preparation method of the laser. The laser has the advantages that the laser uses an InGaAsN / InGaAlAs material system as the active region, has large conduction band order ratio and can effectively limit injected carriers, so that the threshold current is reduced, and the laser gain is improved; on an isometric wavelength band of 1550 nm, the content of N required by an active region material is lower, and devices with high material quality are easy to obtain.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a vertical cavity surface emitting laser and a manufacturing method thereof. Background technique [0002] In the ever-changing fields of optical storage networks and optical fiber communication systems, semiconductor lasers in the 1310nm and 1550nm bands that are in the zero-dispersion and low-loss windows of optical fibers are irreplaceable light sources. Driven by demand, long-wavelength semiconductor lasers are developing in the direction of high power density, high beam quality, high conversion efficiency, wide operating temperature range, long life, and low cost. Compared with edge-emitting lasers, Vertical-Cavity Surface-Emitting Lasers (Vertical-Cavity Surface-Emitting Lasers, VCSELs) have the advantages of low threshold current, circular laser beam, high modulation bandwidth, and low divergence angle, etc. The first choice for consumer electronic products su...

AI Technical Summary

Problems solved by technology

However, the performance degradation of InGaAsN / GaAs lasers in the band above 1310nm is serious. The reason is that corresponding to the longer band, a larger N molar composition is required, and because the doping of N atoms is easy to introduce defects, it is difficult to obtain high-quality, InGaAsN with high N composition, thus limiting its application at 1550nm and longer

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