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Quantum dots with heterojunction structure and its synthesis method and application

A quantum dot and quantum dot light-emitting technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as electron and hole injection imbalance, QLED parameter influence, carrier injection imbalance, etc., to improve hole transport and the number of holes, solve the problems of QLED devices, and improve the effect of matching degree and hole amount

Active Publication Date: 2020-07-28
嘉兴纳鼎光电科技有限公司
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  • Abstract
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Problems solved by technology

However, there are still many problems to be solved. In the exploration of QLED devices, the injection of electrons and holes is unbalanced, which affects the luminous efficiency, brightness, and lifetime of QLED devices.
In the current device preparation, the biggest problem is that the hole transport is insufficient, which leads to the imbalance between electron and hole injection, and the oversaturation of the number of electrons is easy to cause Auger recombination, which has a great impact on all aspects of QLED parameters.
[0004] In order to increase the amount of hole transport, researchers proposed to introduce a layer of hole transport layer between the quantum dot layer and the hole injection layer, but the effect is not satisfactory, and the hole transport has been improved, but the proportion is still not satisfactory. high
In addition, some scholars have proposed the use of pure inorganic materials such as CuO, MoO 3 , NiO, etc. as hole transport, but still can not solve the problem of unbalanced carrier injection

Method used

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  • Quantum dots with heterojunction structure and its synthesis method and application
  • Quantum dots with heterojunction structure and its synthesis method and application
  • Quantum dots with heterojunction structure and its synthesis method and application

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[0024] A method for synthesizing a heterojunction quantum dot provided in an embodiment of the present invention includes:

[0025] providing first quantum dots of a first conductivity type;

[0026] Forming second nanoparticles of the second conductivity type on the surface of the first quantum dots, and making the second nanoparticles cooperate with the first quantum dots to form a heterojunction.

[0027] In some embodiments, including:

[0028] providing a quantum dot of a core-shell structure comprising a first quantum dot as a core and a shell;

[0029] replacing the shell with the second nanoparticles.

[0030] In some preferred embodiments, the material of the first quantum dots includes any one or a combination of two or more of CdZnSe, CdSe, CdZnSeS, InP and CuInS.

[0031] In some preferred embodiments, the particle size of the first quantum dots is 2-10 nm.

[0032] Wherein, for the preparation of the first quantum dots, reference can be made to methods known i...

Embodiment 1

[0095] Synthesis method of CdZnSe / ZnS-CuI heterostructure quantum dots:

[0096] 1. Take a 100ml three-neck flask and add Cd(OA) 2 Solution 15ml, Zn(OA)2 15ml, ODE 10ml, 120°C, under Ar atmosphere, remove water and oxygen

[0097] 2. Heat up to 300°C, add Se-TOP 0.7ml, and react for 20 minutes to obtain CdZnSe quantum dot core;

[0098] 3. Lower the temperature to 260°C, add diethyl zinc / octadecene solution (DEZ / ODE) 0.5M, 2ml dropwise, and add octyl mercaptan (OT) 1ml dropwise for 20min;

[0099] 7. Add 2mmol Cu(acac) 2 , dissolved in 20ml ODE, 2ml OA, temperature 100~200℃, used to replace part of Zn 2+ ;

[0100] 8. Add 2mmol NH 4 I react for 1 to 60 minutes at a temperature of 25°C to 200°C to form CdZnSe / ZnS-CuI quantum dots.

Embodiment 2

[0102] Synthesis method of InP / ZnS-CuI heterostructure quantum dots:

[0103] 1. In a 100ml three-necked flask, add 1ml of the above-prepared In / OLAM solution, zinc stearate Zn(st) 2 Powder, OLAM 5ml, ODE 5ml, heated up to 150°C, reacted for 30min, in argon atmosphere, in which, indium source and zinc stearate Zn(st) 2 The molar ratio is 0.01:1;

[0104] 2. Heat up to 200°C, add tris(dimethylamino)phosphine (P(EDA) 3 ) to react for 10 minutes to form InP or InZnP quantum dot cores;

[0105] 3. Add TOPSe 1.5ml, Zn(st) 2 ODE 12ml, react at 280°C for 30min;

[0106] 4. Add TOPS 1.5ml, Zn(st) 2 ODE 12ml, react at 280°C for 20min;

[0107] 5. Add 2ml of dodecanethiol (DDT), and react at 280°C for 20 minutes to obtain the final product;

[0108] 6. Add 2mmol Cu(acac) 2 , dissolved in 20ml ODE, 2ml OA, temperature 100~200℃, used to replace part of Zn 2+ ;

[0109] 7. Add 2mmol NH 4 I react for 1 to 60 minutes at 25°C to 200°C to form InP / ZnS-CuI quantum dots.

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Abstract

The invention discloses a method for synthesizing quantum dots with a heterojunction structure, comprising: providing first quantum dots of a first conductivity type; forming second nanoparticles of a second conductivity type on the surface of the first quantum dots, and making The second nanoparticles cooperate with the first quantum dots to form a heterojunction. The invention also discloses a quantum dot light emitting diode device and a manufacturing method thereof, including the steps of manufacturing a first electrode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a second electrode. Compared with the prior art, the present invention uses nanoparticles and quantum dots to form a heterojunction structure, which improves the matching degree and hole volume between the quantum dot layer and the hole transport layer, thereby improving the hole transport and hole volume of the QLED device , improve the recombination rate of electrons and holes, improve the injection balance of electrons and holes, make the QDs layer and the hole transport layer have a better combination, and solve the problem of QLED devices.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a quantum dot with heterojunction structure and its synthesis method and application. Background technique [0002] Quantum dots are an important low-dimensional semiconductor material, whose size in three dimensions is not larger than twice the exciton Bohr radius of the corresponding semiconductor material. Quantum dots have the characteristics of high color purity, good quantum effect, and good stability, and have good application prospects in the display field. [0003] Through the research efforts of many scholars and scientific researchers, substantial progress has been made in the preparation of quantum dot materials and their QLED devices. However, there are still many problems to be solved. In the exploration of QLED devices, there is an unbalanced injection of electrons and holes, which affects the luminous efficiency, brightness, and lifetime of QLED ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/15H10K50/00H10K71/00
Inventor 张超李霞张孟
Owner 嘉兴纳鼎光电科技有限公司
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