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Composite material and QLED device

A composite material and device technology, applied in the field of quantum dots, can solve the problems of unbalanced carrier injection, affecting the luminous efficiency and stability of the device, etc., to improve the injection balance, improve the luminous efficiency and stability, and improve the luminous efficiency and stability. The effect of stability

Inactive Publication Date: 2019-07-09
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies in the prior art, and provide a composite material and a QLED device, aiming to solve the technical problem that the carrier injection imbalance in the existing QLED device affects the luminous efficiency and stability of the device

Method used

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  • Composite material and QLED device

Examples

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preparation example Construction

[0032] When the magnetic layer is used as a magnetic layer at the interface of each functional layer of the device, it can be placed between HIL (hole injection layer) and HTL (hole transport layer), between HTL and EML (quantum dot light emitting layer), between EML and ETL Between the (electron transport layer), between the EIL (electron injection layer) and the ETL, and between the electrode and the HIL / EIL, may be a single-layer structure or a multi-layer structure. The selection of magnetic layer materials includes but not limited to conductive magnetic materials and insulating magnetic materials, conductive magnetic materials such as Fe, Co, Ni and other transition group metals and their alloys, and oxides thereof, insulating magnetic materials such as sintered ferrite, magnetic rubber etc. Furthermore, for conductive magnetic materials, the thickness of the magnetic layer is controlled at 1nm-10nm. When the thickness of the magnetic layer of the conductive magnetic mate...

Embodiment 1

[0055] A magnetic layer made of a magnetic material is disposed between the quantum dot light emitting layer and the electron transport layer of the QLED device.

[0056] The QLED device structure is: ITO / PEDOT:PSS / Poly-TPD / PVK / Green QDs / Magnetic Layer / ZnO / Al. The preparation method of the QLED device is as follows: first spin-coat PEDOT:PSS on the glass substrate containing the ITO electrode at a rotation speed of 5000r.p.m. for 30s, then heat at 120°C in the air for 20min, and control the thickness at about 35nm. Spin-coat 1wt% Poly-TPD dissolved in chlorobenzene at a rotation speed of 2500r.p.m. for 30s, then heat at 110°C for 30min in nitrogen, and control the thickness at about 30nm. Spin-coat 2mg / ml PVK dissolved in toluene at a speed of 2500r.p.m. for 30s, and control the thickness at about 5nm. Then spin-coat 30mg / ml CdSe-CdS core-shell quantum dots dissolved in toluene at a rotation speed of 800r.p.m. for 30s, then heat at 120°C for 15min in nitrogen, and control the...

Embodiment 2

[0059] A magnetic layer made of magnetic material is arranged between the quantum dot light-emitting layer and the hole transport layer of the QLED device.

[0060] The QLED device structure is ITO / PEDOT:PSS / Poly-TPD / PVK / Magnetic Layer / Green QDs / ZnO / Al. The preparation method of each layer of the QLED device is similar to the above-mentioned Example 1, the thickness of the ML layer is also controlled at 0nm, 1nm, 3nm, and 5nm, and the brightness of the device is 8000cd / m at a current of 2mA. 2 、10564cd / m 2 、6000cd / m 2 、4000cd / m 2 . It can be seen that when the ML thickness is 1 nm, the performance of the device is relatively good, and the brightness is increased by 32% compared with that without ML.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a composite material and a QLED device. The QLED device comprises an anode, a quantum dot luminescent layer and a cathode that are stacked, an electronic functional layer is arranged between the cathode and the quantum dot luminescent layer, and the electronic functional layer contains an electronic functional material and a magnetic material, wherein the electronic functional material is an electron injection material or an electron transport material. According to the QLED device of the invention, sincethe electron mobility can be adjusted by the magnetic material, the injection balance of carriers can be improved, and therefore, the QLED device has excellent luminous efficiency and stability.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a composite material and a QLED device. Background technique [0002] Quantum Dot Light Emitting Diodes (Quantum Dot Light Emitting Diodes QLED) is a light-emitting device based on inorganic nanocrystal quantum dot materials. A strong contender for next-generation display technology. Usually in a multilayer structure QLED device, an important point affecting its luminous efficiency is the carrier balance problem. Usually, the movable holes reach the light-emitting layer from the anode through the hole injection and transport layer, and recombine with the electrons migrated from the cathode through the electron injection and transport layer to form excitons, and then the excitons radiate and emit photons. It is worth noting that too many holes or electrons will generate a three-particle system, which will cause the quenching of the generated excitons, thereby re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54
CPCH10K50/115H10K50/16H10K50/171H10K2102/00
Inventor 王雄志向超宇李乐张滔辛征航李雪
Owner TCL CORPORATION
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