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A quantum dot light-emitting layer and its preparation method, quantum dot device

A quantum dot device and quantum dot light-emitting technology, applied in the field of quantum dot light-emitting layer and its preparation, quantum dot device field, can solve problems such as charge injection imbalance, achieve the effect of carrier injection balance, improve efficiency and lifespan

Active Publication Date: 2021-10-26
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the deficiencies of the prior art, the object of the present invention is to provide a quantum dot light-emitting layer and a quantum dot device using the quantum dot light-emitting layer to solve the problem of unbalanced charge injection

Method used

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  • A quantum dot light-emitting layer and its preparation method, quantum dot device
  • A quantum dot light-emitting layer and its preparation method, quantum dot device
  • A quantum dot light-emitting layer and its preparation method, quantum dot device

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preparation example Construction

[0046] The preparation of the quantum dot light-emitting layer includes the preparation of the quantum dot composite structure 10a, the third quantum dot layer 31 and the third polymer bridging layer 32, wherein the preparation method of the quantum dot composite structure 10a can refer to the preparation method of the first embodiment, For the third quantum dot layer 31 and the third polymer bridging layer 32 , reference may be made to the preparation methods of the first quantum dot layer 11 and the first polymer bridging layer 12 in the first embodiment, which will not be repeated here.

[0047] In the third embodiment of the quantum dot light-emitting layer, such as image 3 As shown, the quantum dot light-emitting layer includes a quantum dot composite structure 10b, and the quantum dot composite structure 10b includes a first polymer bridging layer 12, a first quantum dot layer 11 and a second quantum dot layer 13 arranged in sequence, and the first polymer The bridging ...

Embodiment 1

[0067] The preparation of QLED positive device comprises the following steps:

[0068] S1, cleaning of ITO glass

[0069] Put the ITO glass sheet with the number engraved on the back into a glass dish filled with ethanol solution, scrub the ITO surface with a cotton swab, and then use acetone, deionized water, and ethanol to sonicate for 10 minutes respectively, and blow dry with a nitrogen gun. Finally, Place the cleaned ITO glass sheet in oxygen plasma and continue cleaning for 10 minutes;

[0070] S2, preparation of hole injection layer (Pedot:PSS)

[0071] The cleaned ITO glass sheet was spin-coated with Pedot:PSS in the air, the rotation speed was 3000r / min, and the spin-coating time was 45 seconds. After the spin-coating was completed, it was placed in the air for annealing. The annealing temperature was 150°C, and the annealing time was 30 minutes. After the annealing is completed, quickly transfer the sheet to a glove box with a nitrogen atmosphere;

[0072] S3, pre...

Embodiment 2

[0084] The preparation of QLED positive device comprises the following steps:

[0085] S1, cleaning of ITO glass

[0086] Put the ITO glass sheet with the number engraved on the back into a glass dish filled with ethanol solution, scrub the ITO surface with a cotton swab, and then use acetone, deionized water, and ethanol to sonicate for 10 minutes respectively, and blow dry with a nitrogen gun. Finally, Place the cleaned ITO glass sheet in oxygen plasma and continue cleaning for 10 minutes;

[0087] S2, preparation of hole injection layer (Pedot:PSS)

[0088] The cleaned ITO glass sheet was spin-coated with Pedot:PSS in the air, the rotation speed was 3000r / min, and the spin-coating time was 45 seconds. After the spin-coating was completed, it was placed in the air for annealing. The annealing temperature was 150°C, and the annealing time was 30 minutes. After the annealing is completed, quickly transfer the sheet to a glove box with a nitrogen atmosphere;

[0089] S3, pre...

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Abstract

The invention discloses a quantum dot luminescent layer, a preparation method thereof and a quantum dot device. Wherein the quantum dot light-emitting layer includes at least one quantum dot composite structure, the quantum dot composite structure includes a first quantum dot layer, a first polymer bridging layer and a second quantum dot layer arranged in sequence, or the quantum dot composite structure includes a first quantum dot layer arranged in sequence The polymer bridging layer, the first quantum dot layer and the second quantum dot layer, the first polymer bridging layer is connected to the adjacent quantum dot layer through force. The quantum dot light-emitting layer of the present invention combines quantum dots with different functions in a layered manner, so that the hole injection ability and electron injection ability of the quantum dots on both sides of the quantum dot light-emitting layer can be adjusted respectively according to actual needs. When the dot light-emitting layer is applied to a QLED device, it is beneficial to balance the carrier injection of the quantum dot light-emitting layer, thereby improving the efficiency and life of the QLED device.

Description

technical field [0001] The invention relates to the technical field of quantum dot materials, in particular to a quantum dot light-emitting layer, a preparation method thereof, and a quantum dot device. Background technique [0002] Quantum dot light-emitting diode (QLED) is a structure composed of a cathode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and an anode. When a voltage is applied, electrons and holes are injected from their respective electrodes. The two combine to emit light. Due to its continuously adjustable spectrum in the visible region, wide absorption and narrow emission, high color purity and luminous intensity, QLED has attracted more and more attention. [0003] The original QLED structure using uncoated quantum dots has a low yield of quantum dots and low efficiency of the device due to the luminescence of the organic material caused by the imbalance of charge injection. Later, in o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/00H10K50/11H10K2101/40H10K50/115
Inventor 高远张振星谢松均
Owner NANJING TECH CORP LTD
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