QLED device and preparation method thereof

A device and magnetic material technology, applied in the field of quantum dots, can solve the problems of carrier injection imbalance, affecting device luminous efficiency and stability, etc., to improve injection balance, improve luminous efficiency and stability, and the process is simple and easy Effect

Inactive Publication Date: 2019-07-09
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, provide a QLED device and its preparation method, and aim to solve the technical problem that the carrier injection imbalance in the existing QLED device affects the luminous efficiency and stability of the device

Method used

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  • QLED device and preparation method thereof
  • QLED device and preparation method thereof

Examples

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preparation example Construction

[0034] When the magnetic layer is used as a magnetic layer at the interface of each functional layer of the device, it can be placed between HIL (hole injection layer) and HTL (hole transport layer), between HTL and EML (quantum dot light emitting layer), between EML and ETL Between the (electron transport layer), between the EIL (electron injection layer) and the ETL, and between the electrode and the HIL / EIL, may be a single-layer structure or a multi-layer structure. The selection of magnetic layer materials includes but not limited to conductive magnetic materials and insulating magnetic materials, conductive magnetic materials such as Fe, Co, Ni and other transition group metals and their alloys, and oxides thereof, insulating magnetic materials such as sintered ferrite, magnetic rubber etc. Furthermore, for conductive magnetic materials, the thickness of the magnetic layer is controlled at 1nm-10nm. When the thickness of the magnetic layer of the conductive magnetic mate...

Embodiment 1

[0057] A magnetic layer made of a magnetic material is disposed between the quantum dot light emitting layer and the electron transport layer of the QLED device.

[0058] The QLED device structure is: ITO / PEDOT:PSS / Poly-TPD / PVK / Green QDs / MagneticLayer / ZnO / Al. The preparation method of the QLED device is as follows: first spin-coat PEDOT:PSS on the glass substrate containing the ITO electrode at a rotation speed of 5000r.p.m. for 30s, then heat at 120°C in the air for 20min, and control the thickness at about 35nm. Spin-coat 1wt% Poly-TPD dissolved in chlorobenzene at a rotation speed of 2500r.p.m. for 30s, then heat at 110°C for 30min in nitrogen, and control the thickness at about 30nm. Spin-coat 2mg / ml PVK dissolved in toluene at a speed of 2500r.p.m. for 30s, and control the thickness at about 5nm. Then spin-coat 30mg / ml CdSe-CdS core-shell quantum dots dissolved in toluene at a rotation speed of 800r.p.m. for 30s, then heat at 120°C for 15min in nitrogen, and control the ...

Embodiment 2

[0061] A magnetic layer made of magnetic material is arranged between the quantum dot light-emitting layer and the hole transport layer of the QLED device.

[0062] The QLED device structure is ITO / PEDOT:PSS / Poly-TPD / PVK / Magnetic Layer / GreenQDs / ZnO / Al. The preparation method of each layer of the QLED device is similar to the above-mentioned Example 1, the thickness of the ML layer is also controlled at 0nm, 1nm, 3nm, and 5nm, and the brightness of the device is 8000cd / m at a current of 2mA. 2 、10564cd / m 2 、6000cd / m 2 、4000cd / m 2 . It can be seen that when the ML thickness is 1 nm, the performance of the device is relatively good, and the brightness is increased by 32% compared with that without ML.

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Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a QLED device and a preparation method thereof. The QLED device comprises an anode, a quantum dot light-emitting layer and a cathode which are arranged in a stacked mode; an electron adjusting layer is also arranged between the cathode and the quantum dot light-emitting layer; and the electron adjusting layercomprises a magnetic material. According to the QLED device, the electron adjusting layer containing the magnetic material is arranged between the cathode and the quantum dot light-emitting layer; due to the fact that when the magnetic material is used as an interface in the QLED device, the magnetic moments and orientation of the magnetic materials are different in size, so that different barrier heights need to be overcome when carriers pass through the interface, the change of the vacuum energy level is caused consequently, and the electron injection potential barrier can be reduced by changing the vacuum energy level, and therefore the carrier injection balance in the QLED device is improved, and the luminous efficiency and the stability of the device are further improved.

Description

technical field [0001] The invention belongs to the field of quantum dots, and in particular relates to a QLED device and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diodes (Quantum Dot Light Emitting Diodes QLED) is a light-emitting device based on inorganic nanocrystal quantum dot materials. A strong contender for next-generation display technology. Usually in a multilayer structure QLED device, an important point affecting its luminous efficiency is the carrier balance problem. Usually, the movable holes reach the light-emitting layer from the anode through the hole injection and transport layer, and recombine with the electrons migrated from the cathode through the electron injection and transport layer to form excitons, and then the excitons radiate and emit photons. It is worth noting that too many holes or electrons will generate a three-particle system, which will cause the quenching of the generated excitons, thereby redu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/17H10K71/00
Inventor 向超宇王雄志李乐张滔辛征航李雪
Owner TCL CORPORATION
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