Ink, quantum dot film and quantum dot light emitting diode

A technology of quantum dots and inks, which is applied in the fields of inks, quantum dot films and quantum dot light-emitting diodes, and can solve the problems of uneven film formation of quantum dots and poor dispersion of quantum dot inks.

Active Publication Date: 2021-05-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, provide a kind of ink and quantum dot thin film and quantum dot light-emitting diode, aim to solve the technical problem that existing quantum dot ink dispersibility is not good, causes the quantum dot film to be uneven

Method used

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  • Ink, quantum dot film and quantum dot light emitting diode
  • Ink, quantum dot film and quantum dot light emitting diode
  • Ink, quantum dot film and quantum dot light emitting diode

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preparation example Construction

[0052] Correspondingly, an embodiment of the present invention provides a method for preparing a quantum dot film, such as figure 1 shown, including the following steps:

[0053] S01: Provide the substrate;

[0054] S02: Deposit the ink described in the embodiment of the present invention on the substrate, and then perform drying treatment to obtain the quantum dot film.

[0055] Specifically, the method of ink configuration includes: firstly dissolving the functional block copolymer in one or several organic solvents according to a certain proportion to obtain a solvent with suitable viscosity, boiling point and surface tension; then dissolving the quantum dots according to a predetermined proportion The quantum dot ink is obtained by dissolving in the above-mentioned modified solvent.

[0056] Specifically, the method for depositing the ink on the base sheet is an inkjet printing method, including: inkjet printing the quantum dot light-emitting layer film by selecting a su...

Embodiment 1

[0064] A method for preparing an ink and a method for printing and forming a film, comprising the steps of:

[0065] (1) Functional block polymer modifier: synthesis of mercapto-polystyrene-A-R

[0066] The functional monomer N-phenyl-N-naphthyl-p-vinylaniline of the above-mentioned type I block chain 5g, the free radical initiator azobisisobutylcyanide (AIBN) 5mg, phenylethyl dithiobenzoate 60 mg of the base ester was mixed and dissolved in 50 mL of tetrahydrofuran, and the oxygen in the mixture was removed by vacuum-liquid nitrogen defoaming several times, filled with nitrogen, heated to 50 degrees Celsius, and polymerized for 48 hours. The reactant mixture was cooled in liquid nitrogen for a few seconds to terminate the chain transfer reaction, and then precipitated with n-hexane to obtain a total of 3.8 g of the first functionalized polymer chain macromolecule RAFT reagent.

[0067] Dissolve 3 g of the above-mentioned first section of functionalized polymer chain macromol...

Embodiment 2

[0074] A method for preparing an ink and a method for printing and forming a film, comprising the steps of:

[0075] (1) Functional block polymer modifier: synthesis of mercapto-polystyrene-A-R

[0076] The above-mentioned type I block chain functional monomer N-phenyl-N-naphthyl-p-vinylaniline 3g, free radical initiator azobisisobutylcyanide (AIBN) 3mg, phenylethyl dithiobenzoate 60 mg of the base ester was mixed and dissolved in 50 mL of tetrahydrofuran, and the oxygen in the mixture was removed by vacuum-liquid nitrogen defoaming several times, filled with nitrogen, heated to 50 degrees Celsius, and polymerized for 48 hours. Then add 2 g of N,N-bis-p-(9,9-dimethylfluorenyl)phenyl-p-vinylaniline, a type II block chain functional monomer, and remove the mixture by vacuum-liquid nitrogen defoaming several times. The oxygen in it is filled with nitrogen and then heated to 50 degrees Celsius to polymerize for 48 hours. The reactant mixture was cooled in liquid nitrogen for a few...

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Abstract

The invention belongs to the technical field of display, and particularly relates to an ink, a quantum dot film and a quantum dot light emitting diode. The ink comprises an organic solvent, quantum dots and a block copolymer, wherein the quantum dots and the block copolymer are dispersed in the organic solvent, the molecular general formula of the block copolymer is sulfydryl-polystyrene-A-R, A comprises a block chain as shown in a formula I and/or a formula II in the specification, R is an aliphatic group or an aromatic group, and in the formula I and the formula II, x and y are positive integers. The ink containing the specific block copolymer can improve the process film-forming property and light emitting property of an ink-jet printing quantum dot light-emitting semiconductor.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to an ink, a quantum dot film and a quantum dot light-emitting diode. Background technique [0002] Quantum dot (QD) luminescent materials have the characteristics of changing emission frequency with size change, narrow emission line width, relatively high luminescence quantum efficiency, ultra-high photostability and solution processing. These characteristics make quantum dot light-emitting diodes (QLED) with quantum dot materials as the light-emitting layer have broad application prospects in solid-state lighting, flat panel display and other fields, and have attracted extensive attention from academia and industry. [0003] The solution processing characteristics of quantum dots make the quantum dot light-emitting layer can be prepared by various methods such as spin coating, scraping coating, spraying, and inkjet printing. Compared with the previous methods, the in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/36C09D11/38H01L51/00H01L51/50
CPCC09D11/36C09D11/38H10K71/135H10K50/155Y02E10/549
Inventor 李雪向超宇
Owner TCL CORPORATION
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