The invention relates to a silicon oxide single-coated cesium-copper-chlorine quantum dot, and a preparation method and application thereof, and belongs to the technical field of quantum dots. A low-temperature coating technology is utilized, a precursor is utilized to capture water in air at a relatively low temperature, rapid hydrolysis is carried out, silicon oxide successfully coats the surface of the cesium-copper-chlorine quantum dot, surface defects of the cesium-copper-chlorine quantum dot can be effectively passivated through silicon oxide coating, the light-emitting quantum yield of the cesium-copper-chlorine quantum dot can be increased, and the stability of the quantum dot can also be improved. The luminous quantum yield of the silicon oxide single-coated cesium-copper-chloride quantum dot film is as high as 76%, and a white light emitting diode prepared from the silicon oxide single-coated cesium-copper-chloride quantum dot has the advantages of high luminous color rendering index, proper color temperature and the like, and is good in stability. The silicon oxide single-coated cesium-copper-chlorine quantum dot serves as a light source in visible light communication, the -3dB bandwidth of the optical fiber is 420 KHz, and bit loading in an OFDM mode reaches 4 bit/s/Hz. The method has the characteristics of good repeatability, no requirement for high-temperature and high-pressure conditions, low cost and the like, and is suitable for expanded production.