85results about How to "Improved hole injection performance" patented technology

The invention discloses a composite hole transport layer with a multi-layer periodic doping structure, an LED device structure and application and preparation method of the LED device structure. By doping a metal oxide material in a hole organic transport layer of a quantum-dot light emitting device, the hole transport layer (HTL) taking the doping organic layer as a structural unit and with multi-layer periodic doping is fabricated, the hole injection capability of the device is remarkably improved, so that the carrier injection balance in the device is improved. Meanwhile, the influence of the doping proportion of the metal oxide doping material in the HTL on the light emitting property of the device is symmetrically researched. The structure is not limited to a quantum-dot LED, and the device structure can be implanted to other types of photoelectric devices.

An organic compound represented by the following general formula [1] is provided. In the general formula [1], R₁ to R₃ are each independently selected from the group consisting of a hydrogen atom, a fluorine group, an alkyl group having 1 to 4 carbon atoms, and an aryl group, the aryl group is a phenyl group, a biphenyl group, or a terphenyl group, the aryl group may further include an alkyl group having 1 to 4 carbon atoms and/or a fluorine group as a substituent, and R₄ to R₁₇ are each independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, and a fluorine group.

The invention is suitable for the technical field of photoelectricity, and provides an electroluminescent anode, an electroluminescent device and a preparation method thereof. The electroluminescent anode comprises a first medium layer, a second medium layer and a metal layer which are stacked. The metal layer is located between the first medium layer and the second medium layer. The first medium layer and the second medium layer are made of hole-injection metallic oxides. The metal layer is made of light-permeable metal. By the aid of the structure of the first medium layer/the metal layer/the second medium layer, the electroluminescent anode is fine in light permeability. By using the hole-injection metallic oxides, hole-injection performance of the anode is improved evidently, and the electroluminescent anode has excellent hole-injection performance under the premise of having high conductivity and high light permeability.

An organic luminous display unit includes an anode, a hole injection layer formed on the anode, a first hole transmission layer formed on the injection layer and the said transmission layer is doped by p type dopants, a second hole transmission layer formed on the first layer, an organic luminous layer formed on the second hold transmission layer, an electronic transmission layer formed on the organic luminous layer and a cathode formed on the electronic transmission layer, among which, the injection layer is matched with the first transmission layer for increasing the element stability and life.

The invention discloses an inverted green light quantum dot film electroluminescence device. The device comprises a substrate, a cathode, an electron transmission layer, a green light quantum dot luminescence layer, a hole transmission layer and an anode which are sequentially laminated, wherein the hole transmission layer comprises a first hole transmission layer and a second hole transmission layer which are laminated, and thickness of the first hole transmission layer is 5-15nm. According to the device, the HOMO energy level of the first transmission layer is greater than the HOMO energy level of the second transmission layer, so step type barrier is formed between the green light quantum dot luminescence layer and the anode, hole injection capability of the hole transmission layer is gradually improved, and hole injection requirements of the green light quantum dot film electroluminescence device can be satisfied.

This invention relates to a process method for metal anode of organic light emission devices characterizing in carrying out metal surface process to the base board of a metal anode in plasma with oxygen component, namely, putting the base board in plasma process cavity charged with mixed gas containing oxygen and with radio field to generate a thin oxide layer on the surface of the metal anode to increase the power function of the metal surface and cavity injection ability, and said metal may be Ag or Ni.

The invention discloses a hole transport material which has high hole transport property and hole injecting property after being crosslinked, thereby improving the efficiency and lifetime of a device.The invention further discloses a quantum dot light emitting diode which is long in life and high in efficiency. The hole transporting material comprises a compound as shown in the general formula I,as shown in the specification, wherein R1 and R2 are independently selected from C1-C30 alkyl.

[Object] It is an object of the present invention to provide an organic compound having excellent properties such as excellent hole injection/transport performance, electron blocking performance, high stability in a thin-film state, and high light emission efficiency as a material for a highly efficient organic EL device having a high durability, and a highly efficient organic EL device having a high durability by using this compound.

[Solving Means] An organic EL device, including, between an anode and a cathode, at least a first hole transport layer, a second hole transport layer, a green light-emitting layer, and an electron transport layer in the stated order from a side of the anode, the organic EL device being characterized in that, the second hole transport layer, or at least one of stacked films disposed between the first hole transport layer and the electron transport layer contains an arylamine compound represented by the following general formula (1).

(In the formula, Ar₁, Ar₂, Ar₃, and Ar₄ may be the same as or different from each other, and each represent a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted fused polycyclic aromatic group. L₁ represents a divalent group of a substituted or unsubstituted aromatic hydrocarbon, a divalent group of a substituted or unsubstituted aromatic heterocyclic, or a divalent group of a substituted or unsubstituted fused polycyclic aromatic. R₁, R₂, and R₃ each represent a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, a cyano group, a nitro group, a linear or branched alkyl group having 1 to 6 carbon atoms which may have a substituted group, a cycloalkyl group having 5 to 10 carbon atoms which may have a substituted group, a linear or branched alkenyl group having 2 to 6 carbon atoms which may have a substituted group, a linear or branched alkyloxy group having 1 to 6 carbon atoms which may have a substituted group, a cycloalkyloxy group having 5 to 10 carbon atoms which may have a substituted group, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted fused polycyclic aromatic group, or a substituted or unsubstituted aryloxy group. n represents an integer of 1 to 3.)

The invention relates to a method for improving the hole injection ability of an ITO transparent conductive film. The method comprises the steps: S1, adding one or two compounds of a structure shown in the structural formula (I) to a solvent ultra-dry benzene solution and fully mixing the compounds and the solvent ultra-dry benzene solution, wherein the volume ratio of the compounds to the solvent ultra-dry benzene solution is 0.1%-5%; S2, after UV light treatment is carried out on the surface of the ITO transparent conductive film, soaking the surface of the ITO transparent conductive film into the mixed solution prepared in the S1; S3, taking out the ITO transparent conductive film soaked in the S2, and purifying and drying the ITO transparent conductive film in an alcoholic solution to obtain the ITO transparent conductive film with the high hole injection ability.

An organic light emitting device comprises an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode which are sequentially stacked. The materials of the hole injection layer include poly(3,4-ethoxylene dioxy thiophene), polystyrene sulfonate, and grapheme coated with calcium oxide, wherein the mass ratio of polystyrene sulfonate to poly(3,4-ethoxylene dioxy thiophene) is 1:2 to 1:6, and the mass ratio of grapheme coated with calcium oxide to poly(3,4-ethoxylene dioxy thiophene) is 1:100 to 1:10. The light emitting efficiency of the organic light emitting device is high. The invention further provides a preparation method of the organic light emitting device.

The invention provides a quantum dot light emitting diode. The quantum dot light emitting diode comprises a substrate, an anode, a hole injection hole, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode which are sequentially arranged in a stacked manner, wherein the hole injection layer contains a 2D TMDs/C composite material, the 2D TMDs/C composite material is a carbon modified 2D TMDs material, and the carbon modified 2D TMDs material is a hybrid structure formed by the interaction of a carbon matrix and an outer electron layer of chalcogen in 2D TMDs.

The invention discloses an inverted green light quantum dot film electroluminescence device. The device comprises a substrate, a cathode, an electron transmission layer, a green light quantum dot luminescence layer, a hole balance transmission layer, a hole transmission layer and an anode which are sequentially laminated, wherein the hole transmission layer comprises a third hole transmission layer, a second hole transmission layer and a first hole transmission layer which are sequentially laminated, and thickness of the hole balance transmission layer is 5-10nm. According to the device, HOMO energy levels of the third transmission layer, the second transmission layer and the first transmission layer decrease sequentially, so step type barrier is formed between the green light quantum dot luminescence layer and the anode, hole injection capability of the hole transmission layer is gradually improved, hole injection requirements of the green light quantum dot film electroluminescence device can be satisfied, moreover, the hole balance layer can prevent direction contact between the first hole transmission material with high mobility and the green light quantum dot luminescence layer to prevent luminescence quenching.

An organic electroluminescent device comprises a glass substrate, an anode, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. The anode is composed of a first lanthanide oxide layer, a metal layer and a second lanthanide oxide layer which are successively laminated, wherein a first lanthanide oxide and a second lanthanide oxide are selected from at least one of praseodymium dioxide, praseodymium oxide, ytterbium trioxide and samarium oxide. The metal layer contains a first metal layer and a second metal layer doped in the first metal layer, wherein the first metal layer is selected from at least one of silver, aluminium, platinum and gold; the second metal layer is metal with work function being minus 4.0eV- minus 2.0eV; and mass of the second metal layer accounts for 1 wt%-10wt% of mass of the first metal layer. Luminous efficiency of the above organic electroluminescent device is high. The invention also provides a preparation method of the organic electroluminescent device.

The invention discloses an organic electroluminescent device and its preparation method. A mixed material formed by platinum-group metal oxide and aluminum or precious metal is used as an anode material; optical glass with its refractive index being greater than 1.8 is used as a substrate; and a light extraction layer which matches the glass substrate is prepared on the back of the glass substrate. The light extraction layer has a good scattering effect on light. Thus, total reflection of light being emitted from the glass substrate into the air can be reduced, and light can be effectively emitted to the air. The preparation method is simple and easy to control and operate, and raw materials are easily available.

The invention discloses an inverted blue light quantum dot film electroluminescence device. The device comprises a substrate, a cathode, an electron transmission layer, a blue light quantum dot luminescence layer, a hole transmission layer and an anode which are sequentially laminated, wherein the hole transmission layer comprises a first hole transmission layer and a second hole transmission layer which are laminated, and thickness of the first hole transmission layer is 5-15nm. According to the device, the HOMO energy level of the first hole transmission layer is greater than the HOMO energy level of the second hole transmission layer, so step type barrier is formed between the blue light quantum dot luminescence layer and the anode, hole injection capability of the hole transmission layer is gradually improved, and thereby hole injection requirements of the blue light quantum dot film electroluminescence device can be satisfied.

The invention discloses an inverted green light quantum dot film electroluminescence device. The device comprises a substrate, a cathode, an electron transmission layer, a green light quantum dot luminescence layer, a hole transmission layer and an anode which are sequentially laminated, wherein the hole transmission layer comprises a first hole transmission layer, a second hole transmission layer and a third hole transmission layer which are sequentially laminated, and thickness of the first hole transmission layer is 5-10nm. According to the device, HOMO energy levels of the first transmission layer, the second transmission layer and the third transmission layer decrease sequentially, so step type barrier is formed between the green light quantum dot luminescence layer and the anode, hole injection capability of the hole transmission layer is gradually improved, and hole injection requirements of the green light quantum dot film electroluminescence device can be satisfied.

An inverted blue light quantum-dot thin film electroluminescence device disclosed by the present invention comprises a substrate, a cathode, an electronic transmission layer, a blue light quantum-dot luminescent layer, hole transport layers and an anode which are laminated orderly, and the hole transport layers comprise a first hole transport layer, a second hole transport layer and a third hole transport layer which are laminated orderly. The thickness of the first hole transport layer is between 5 nm and 10 nm, and the HOMO energy levels of the first hole transport layer, the second hole transport layer and the third hole transport layer are reduced orderly, thereby forming the ladder-like potential barrier between the blue light quantum-dot luminescent layer and the anode, improving the hole-injection ability of the hole transport layers gradually, and satisfying the hole injection requirement of the blue light quantum-dot thin film electroluminescence device.

The invention belongs to the field of organic light-emitting devices and discloses an organic light-emitting device and a manufacturing method thereof. The organic light-emitting device comprises a conductive anode substrate, a hole injection layer, a first hole transmission layer, a first luminous layer, a first electron transmission layer, a first electron injection layer, a charge regeneration layer, a second hole transmission layer, a second luminous layer, a second electron transmission layer, a second electron injection layer and a cathode layer, wherein the conductive anode substrate, the hole injection layer, the first hole transmission layer, the first luminous layer, the first electron transmission layer, the first electron injection layer, the charge regeneration layer, the second hole transmission layer, the second luminous layer, the second electron transmission layer, the second electron injection layer and the cathode layer are sequentially stacked, and the charge regeneration layer comprises an n-type layer, a middle layer and a p-type layer. According to the organic light-emitting device, the p-type layer of the charge regeneration layer provides holes, the n-type layer of the charge regeneration layer provides electrons, metal oxide of the middle layer can improve electron and hole regeneration capacity and electrical conductivity of the charge regeneration layer, all the n-type layer, the middle layer and the p-type layer comprise the same metal oxide, the potential barrier between the layers can be reduced, injection and transmission of holes or electrons are facilitated, and the luminous efficiency of the organic light-emitting device is improved.

The invention relates to the technical field of light-emitting diodes, and particularly relates to an organic light-emitting diode and a preparation method thereof. The organic light-emitting diode provided by the invention comprises an ITO substrate, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and an electrode layer, wherein the hole injection layer includes a PEDOT: PSS layer and an MoS2 quantum dot layer. The hole injection ability of the organic light-emitting diode (OLED) is mainly enhanced through the MoS2 quantum dot layer. Meanwhile, the MoS2 quantum dot layer can prevent the PEDOT: PSS layer from absorbing moisture, so that the stability of the organic light-emitting diode device is improved. According to the embodiment, the maximum current efficiency of the light-emitting diode device in the invention can reach up to 73.5cd.A<-1>, which is greatly improved compared with the maximum current efficiency (60.2cd.A<-1>) in the prior art.

The embodiment of the invention discloses a silicon-based organic electroluminescent micro-display and a preparation method thereof. The silicon-based organic light-emitting micro display comprises asilicon-based circuit substrate, and a plurality of sub-pixels, wherein the silicon-based circuit substrate comprises a silicon-based substrate and a driving circuit positioned on the silicon-based substrate; the sub-pixels are arranged on the silicon-based circuit substrate, each sub-pixel comprises a first electrode, a buffer pattern, an organic light-emitting layer and a second electrode whichare sequentially arranged in a stacked mode, and the first electrodes are electrically connected with the driving circuit; and the buffer pattern is formed by patterning a buffer layer, and the bufferlayer is prepared from an aqueous solution of a buffer material. According to the embodiment of the invention, the problem that transverse electric leakage easily occurs between sub-pixels in an existing silicon-based organic electroluminescent micro-display is solved, color crossing between the sub-pixels can be avoided, and meanwhile, the hole injection capability of the sub-pixels can be improved, the recombination efficiency of carriers is improved, and the luminous efficiency of the sub-pixels is improved.

The invention discloses an electroluminescent diode and a display device. The electroluminescent diode includes a cathode, a light emitting layer, a hole transport layer, and an anode. The hole transport layer is provided with a hole injection regulation and control structure, the hole injection regulation and control structure comprises a first hole conduction layer and a second hole conduction layer which are stacked, and the material of the second hole conduction layer is the material used by the P-type doped first hole conduction layer. The hole injection regulation and control structure can significantly improve the hole injection performance in the electroluminescent diode so as to balance the number of carriers in the electroluminescent diode, thereby effectively improving the luminescence performance and prolonging the service life of the electroluminescent diode.