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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of unbalanced carrier injection, affecting the performance of QLED devices, etc., to enhance the hole injection ability, easy to realize industrialization, Mature and controllable effects

Active Publication Date: 2018-10-23
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem that the existing quantum dot light-emitting diodes cause unbalanced carrier injection in the light-emitting layer due to hole injection efficiency and affect the performance of QLED devices

Method used

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  • Quantum dot light emitting diode and preparation method thereof

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preparation example Construction

[0029] And, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0030] S01. Configure a hole injection material solution containing 2D TMDs / C composite material, and provide a patterned anode substrate;

[0031] S02. Depositing the hole injection material solution on the patterned anode substrate to prepare a hole injection layer;

[0032] S03. Depositing a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode sequentially on the hole injection layer.

[0033] Specifically, in the above step S01, preferably, the preparation method of the 2D TMDs / C composite material is:

[0034] S011. Provide organic carbon source;

[0035] The organic carbon source can be purchased or obtained by self-preparation. Specifically, the organic carbon source includes but not limited to polyaniline.

[0036] As a specific example, the preparation method of t...

Embodiment 1

[0052] A quantum dot light-emitting diode, comprising a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode that are sequentially stacked, wherein the hole injection layer is made of MoS 2 / C composite material.

[0053] The preparation method of the quantum dot light-emitting diode comprises the following steps:

[0054] S11. configuring a hole injection material solution containing a 2D TMDs / C composite material, and providing a patterned anode substrate;

[0055] The patterned ITO substrate was placed in acetone, lotion, deionized water and isopropanol in order for ultrasonic cleaning, and each step of ultrasonic cleaning lasted for about 15 minutes. After the ultrasound is completed, place the ITO in a clean oven to dry for later use.

[0056] After the ITO substrate was dried, the ITO surface was treated with oxygen plasma for 5 minutes to further remove the organic matter at...

Embodiment 2

[0064] A quantum dot light-emitting diode, comprising a substrate, an anode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a cathode that are sequentially stacked, wherein the hole injection layer is made of MoS 2 / C composite and PEDOT:PSS.

[0065] The preparation method of the quantum dot light-emitting diode comprises the following steps:

[0066] S21. configuring a hole injection material solution containing a 2D TMDs / C composite material, and providing a patterned anode substrate;

[0067] The patterned ITO substrate was placed in acetone, lotion, deionized water and isopropanol in order for ultrasonic cleaning, and each step of ultrasonic cleaning lasted for about 15 minutes. After the ultrasound is completed, place the ITO in a clean oven to dry for later use.

[0068] After the ITO substrate was dried, the ITO surface was treated with oxygen plasma for 5 minutes to further remove the organic matt...

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Abstract

The invention provides a quantum dot light emitting diode. The quantum dot light emitting diode comprises a substrate, an anode, a hole injection hole, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode which are sequentially arranged in a stacked manner, wherein the hole injection layer contains a 2D TMDs / C composite material, the 2D TMDs / C composite material is a carbon modified 2D TMDs material, and the carbon modified 2D TMDs material is a hybrid structure formed by the interaction of a carbon matrix and an outer electron layer of chalcogen in 2D TMDs.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dots have the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, and high quantum yield, and can be prepared by printing technology, so quantum dot-based light-emitting diodes (ie, quantum dot light-emitting diodes: QLED) have recently It has been widely concerned by people, and its device performance indicators have also developed rapidly. However, due to the deep energy level and high ionization potential of quantum dot materials, there is still a large hole injection barrier between the existing hole transport layer and the quantum dot light-emitting layer, resulting in the hole injection from the anode to the light-emitting layer. It is more difficult, and the hole injection efficiency is generally ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/04H01L33/26
CPCH01L33/005H01L33/04H01L33/26H01L2933/0033
Inventor 李龙基曹蔚然王宇
Owner TCL CORPORATION
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