36results about How to "Raise the Fermi level" patented technology

A photoelectric transducer 1 includes a semiconductor electrode 15 provided with a semiconductor layer 7 supporting a sensitizing dye, a counter electrode 9 opposed to the semiconductor electrode 15, and an electrolyte layer 13 disposed between the semiconductor electrode 15 and the counter electrode 9, wherein the electrolyte layer 13 includes a compound containing a nitrogen atom having non-shared electron pairs in a molecule and iodine (I3<->) with a concentration of 0.06 to 6 mol / dm<3>, whereby a photoelectric transducer capable of maintaining an excellent conversion efficiency for a long period of time can be provided.

The invention provides an LED epitaxial structure of a composite P-type GaN layer and a fabrication method of the LED epitaxial structure. The P-type GaN layer of the LED epitaxial structure sequentially comprises a first P-type GaN layer, a second P-type GaN layer and a third P-type GaN layer, wherein the thickness of the first P-type GaN layer is 40-80 nanometers, the thickness of the second P-type GaN layer is 30-70 nanometers, and the thickness of the third P-type GaN layer is 4-10 nanometers. In the P-type GaN layer structure, two effects are achieved by simultaneously doping an n-type dopant and a P-type dopant: the solubility of the dopants (the formation energy of the dopants is reduced) is increased to prevent a self-compensation effect, and the activation ratio is improved by reducing an acceptor level, so that the self-compensation effect of the P-type GaN layer is prevented better, the hole concentration is improved, and the purpose of improving the luminous efficiency and the electricity of a GaN device is achieved.

The present invention relates to an organic electronic device, comprising a first electrode, a second electrode, and a substantially organic layer comprising a compound according to formula (I) between the first and the second electrode:wherein A1 is a C6-C20 arylene and each of A2-A3 is independently selected from a C6-C20 aryl, wherein the aryl or arylene may be unsubstituted or substituted with groups comprising C and H or with a further LiO group, provided that the given C count in an aryl or arylene group includes also all substituents present on the said group.

The present invention relates to an organic electronic device, comprising a first electrode, a second electrode, and a substantially organic layer comprising a compound according to formula (I) between the first and the second electrode:wherein M is a metal ion, each of A1-A4 is independently selected from H, substituted or unsubstituted C6-C20 aryl and substituted or unsubstituted C2-C20 heteroaryl and n is valency of the metal ion.

The invention belongs to the field of dye-sensitized solar cells and particularly provides a method for preparing a metal-doped low-energy gap nanocrystalline semiconductor photo-anode film. The method comprises the steps of: preparing low-energy gap metal-doped nano-titanium dioxide powder and a gel precursor, and then spinning the powder and gel on a conductive glass substrate to obtain a low-energy gap doped porous nano-titanium dioxide photo-anode film. The method realizes the control to the size of a semi-conductor titanium dioxide energy gap and the position of an LUMO energy level thereof through one, two or more different metals, widens an absorption spectral band of the photo-anode film, ensures that an anode can also absorb the sunlight to generate photogenerated electrons and cavities when electrons are transmitted, improves the utilization rate of the sunlight, also improves the energy level matching performance of the photo-anode film and dye molecules, improves an Femi energy level of a titanium dioxide anode material at the same time, remarkably enhances the open-circuit voltage, can greatly improve the photoelectric conversion performance of the cells, and improve the photoelectric conversion efficiency of the solar cells.

The invention discloses a doping dye sensitized solar cell photo anode, preparation method and application thereof, wherein the doping dye sensitized solar cell photo anode is divided into three layers in structure; the first layer is a common glass; the second layer is a SnO2 transparent conductive film doped with F; the third layer is a nanocrystalline porous composite film formed by doping the nano particle with mesoporous semiconductor at wide band with nanocrystalline semiconductor particles, wherein dyes are attached on the nanocrystalline porous composite film. The doping dye sensitized solar cell photo anode is used in doping dye sensitized solar cells. The doping dye sensitized solar cell photo anode of the invention can improve the photoelectric conversion performance of cells and increase the photoelectric conversion efficiency of solar cells well, and has the advantages of simple preparing technology, good repeatability and low cost; the doping dye sensitized solar cell photo anode not only can be used in dye sensitized solar cell materials, but also can be used in the fields of photocatalysis, gas sensitive material and the like.

The present invention relates to an organic electronic device, comprising a first electrode, a second electrode, and a substantially organic layer comprising a compound according to formula (I) between the first and the second electrode:wherein M is a metal ion, each of A1-A4 is independently selected from H, substituted or unsubstituted C6-C20 aryl and substituted or unsubstituted C2-C20 heteroaryl and n is valency of the metal ion.

The invention is suitable for the technical field of solar cells, and provides a solar cell and a passivation contact structure thereof, a cell assembly and a photovoltaic system, the passivation contact structure comprises a first passivation contact area arranged on a silicon substrate and a second passivation contact area arranged on the first passivation contact area; the second passivation contact area is provided with an opening, so that the conductive layer is connected with the first passivation contact area; the first passivation contact area comprises a first doping layer, a first passivation layer and a second doping layer, the second passivation contact area comprises a second passivation layer and a third doping layer, and the first passivation layer is of a porous structure with the first doping layer and / or the second doping layer in a hole region. According to the passivation contact structure provided by the invention, the problems that an existing conducting layer is poor in isolation effect, and recombination is increased and conversion efficiency is reduced due to the fact that the existing conducting layer is easily in direct contact with a silicon substrate are solved.

The invention discloses a method for photocatalytic advanced treatment of papermaking wastewater. The method comprises the following steps of: adding a proper amount of photocatalyst into the papermaking wastewater; irradiating with a 500W xenon lamp with the ph ranging from 3 to 8 and the initial concentration of CODCr in the papermaking wastewater being 100 to 160mg / L. The photodegradation capacity of the photocatalyst enables the CODCr degradation rate to be 95.5-97.6%. By the advanced treatment method of the photocatalytic papermaking wastewater, the quality of recycled water can be improved to enable the recycled water to meet the multi-aspect water demands of papermaking production, and the restriction of water resource shortage on the development of the papermaking industry is relieved.

An organic electroluminescent component comprises a conductive anode substrate, and a hole injection layer, a hole transmission layer, a luminescent layer, an electron transmission layer and a cathode which are sequentially laminated on an anode layer of the conductive anode substrate, wherein the anode layer is made of indium tin oxide; the hole injection layer is made of iron trifluoride, ruthenium trichloride, osmium trichloride or osmium tetroxide. The luminescent efficiency of the organic electroluminescent component is relatively high. The invention further provides a manufacturing method of the organic electroluminescent component.

The present invention relates to an organic electronic device, comprising a first electrode, a second electrode, and a substantially organic layer comprising a compound according to formula (I) between the first and the second electrode:wherein A1 is a C6-C20 arylene and each of A2-A3 is independently selected from a C6-C20 aryl, wherein the aryl or arylene may be unsubstituted or substituted with groups comprising C and H or with a further LiO group, provided that the given C count in an aryl or arylene group includes also all substituents present on the said group.

The invention relates to a three-dimensional / two-dimensional perovskite-based solar cell and a preparation method thereof. The solar cell sequentially comprises a transparent conductive substrate, an electron transport layer, a three-dimensional perovskite active layer, a two-dimensional perovskite active layer, a hole transport layer and a counter electrode from bottom to top, in the two-dimensional perovskite active layer, the structure of the two-dimensional perovskite is lt; 110gt, 110gt; and shaping. According to the preparation method, a high-quality three-dimensional perovskite thin film is prepared by adopting low-pressure auxiliary treatment, and then a nonlinear long-chain organic amine salt solution is used for treatment, so that the thin film with the 1t is generated on the upper surface of the three-dimensional perovskite in situ; 110gt, 110gt; the invention discloses a two-dimensional perovskite layer. The preparation method is efficient, the preparation process is simple, and the obtained three-dimensional / lt is achieved; 110gt, 110gt; the two-dimensional perovskite thin film is better in film-forming property and fewer in defect, the carrier transport performance of the perovskite solar cell prepared on the basis of the two-dimensional perovskite thin film is improved, and the photoelectric conversion efficiency is remarkably improved.

The present invention relates to a graphene-dielectric composite metasurface-based reflection type broadband polarization controller, and belongs to the technical field of novel artificial electromagnetic materials and terahertz science. The polarization controller comprises a four-layer structure, wherein the lowermost layer is a metal substrate (1), the middle is a low-refractive-index dielectric (2), and the uppermost layer is a high-refractive-index dielectric metasurface array (3) embedded in the low-refractive-index dielectric (2); and meanwhile, the upper surface of the metasurface array is exposed in air, and uniform single-layer graphene (4) is arranged between the low-refractive-index dielectric layer and the high-refractive-index dielectric metasurface. A bias voltage control device (5) is arranged between the graphene layer (4) and the metal substrate (1), so that linearly polarized light is converted into orthogonal linearly polarized light or circularly polarized light ina certain frequency range by changing the conductivity of graphene. The reflection type broadband polarization controller integrates the dual functions of a half-wave plate and a quarter-wave plate,and has the advantages of high efficiency, simple structure, easy integration and the like.

The invention discloses a histamine double-iodized salt and a preparation method thereof, a perovskite solar cell and a preparation method, the histamine double-iodized salt is a multifunctional organic ion, the unique asymmetric structure and flexible molecular structure of HADI play a very important role in bridging SnO2 / perovskite surface, and when the histamine double-iodized salt is applied to the perovskite solar cell, the histamine double-iodized salt can be used for preparing the perovskite solar cell. Wherein a-OH group on the surface of SnO2 is combined with a-NH3 group at the tail end of HADI through dehydration; pb-based defects are passivated through Lewis-acid-base interaction between Pb < 2 + > in the perovskite and imidazolium units of HADI, and migration of I-ions can be inhibited through hydrogen bonds (NH...... I) between the HADI and the perovskite. Meanwhile, the HADI has better flexibility at the SnO2 / perovskite interface compared with other reported organic ammonium salts due to a flexible and long-adapted-CH2-CH2-chain.

The invention provides an Ag / BiOCl-OVs composite photocatalyst and a preparation method and application thereof. The method comprises the steps: step 1, dissovling BiOCl-OVs powder with exposed (001)crystal faces and Ag (NO3) 3 in deionized water according to the mass ratio of 1: (0.05-0.3), and obtaining a mixed system; step 2, carrying out a reduction reaction on the mixed system under a lightsource to obtain a reaction solution; and step 3, separating the product in the reaction solution, and drying to obtain the Ag / BiOCl-OVs composite photocatalyst. According to the preparation method, Ag < + > attached to oxygen vacancies is reduced into Ag by adopting an illumination reduction method, electrons of Ag can be transferred to BiOCl, the Fermi level of BiOCl is increased, and the reduction capability of photo-induced electrons is improved so that the composite photocatalyst can be used for effectively degrading an organic pollutant rhodamine B.

The invention discloses a method for modulating Fermi level of an optical anode of a dye sensitized solar cell through trace N-type doping, which comprises the steps of: with a salt containing a +5 valence or +6 valence metal element is used as an N type doping source material, preparing trace N type doped titanium dioxide slurry by adopting a hydrothermal method and preparing a trace N type doped titanium dioxide nanocrystalline porous film electrode by adopting a coating method. The Fermi level of titanium dioxide nano particles is modulated through trace N type doping, which can remarkably improve the open-circuit voltage, the short-circuit current and the photoelectricity conversion efficiency of the dye sensitized solar cell. Meanwhile, the invention has the advantages of low cost, simple process and good repeatability, and is suitable for industrialized application.

The invention discloses a light-operated terahertz optical fiber modulator and a light amplitude modulation method thereof. The light-operated terahertz optical fiber modulator comprises a terahertz optical fiber used for transmitting terahertz waves, the side edge of the terahertz optical fiber is provided with a polishing and grinding area, and the end face of the terahertz optical fiber with the polishing and grinding area arranged on the side edge is D-shaped; and a metamaterial with a micro-nano structure is arranged on the polishing and grinding area, graphene is arranged on the metamaterial, and a graphene-metamaterial structure serving as a light modulation structure is formed. By adopting the side-polished terahertz optical fiber structure, the loss of terahertz waves in a free space can be effectively reduced, the contact area between graphene and a terahertz wave evanescent field is increased, and the modulation efficiency is improved. Graphene is adopted as a modulation medium substance, so that the modulation characteristic of the terahertz modulator can be effectively improved. In a terahertz wave band, the nano periodic structure prepared from the metamaterial has a high resonance factor. Resonance enhancement enables interaction between the metamaterial and terahertz light to be effectively enhanced.

The optical semiconductor of the present invention is an optical semiconductor containing In, Ga, Zn, O and N, and has a composition in which a part of oxygen (O) is substituted by nitrogen (N) in a general formula: In2xGa2(1-x)O3(ZnO)y, where x and y satisfy 0.2<x<1 and 0.5≦y. In the general formula, x is preferably 0.5, and furthermore, y is preferably 1 or more and 6 or less, and more preferably 2 or 6. It is preferred that the optical semiconductor of the present invention have a wurtzite crystal structure. The optical semiconductor of the present invention is an excellent optical semiconductor because it has a smaller band gap, can utilize visible light, and has high carrier mobility and thus has high quantum efficiency.

The invention discloses optical anode slurry for a dye-sensitized solar cell and a preparation method thereof as well as an optical anode of the dye-sensitized solar cell prepared by utilizing the slurry and the dye-sensitized solar cell, wherein titanium dioxide in the slurry for the dye-sensitized solar cell is the mixture of two kinds of nanoscale titanium dioxides with different particle sizes, the mixture is formed by mixing prepared nano titanium dioxide powder with the particle size of 8-16nm and the specific surface area of 90-100m<2> / g, and P25 titanium dioxide powder proportionally,the optical anode prepared from the slurry fully makes use of the respective advantages of the large particles and the small particles, which ensures that the optical anode has higher optical captureefficiency, but also the photosensitized dye absorption amount is improved, the generation rate and conveying capability of photon-generated carriers are intensified, and the recombination process ofthe photon-generated carriers is reduced, thus the photoelectric conversion efficiency of the dye-sensitized solar cell is improved. The optical anode slurry, the preparation method thereof as well as the optical anode and the dye-sensitized solar cell provided by the invention are suitable for the high-efficiency preparation of the dye-sensitized solar cell.

The invention relates to the technical field of flue gas denitration catalysts, and discloses a preparation method and application of a nitrogen-doped titanium dioxide denitration catalyst. The preparation method of the nitrogen-doped titanium dioxide denitration catalyst comprises the following steps: (1) carrying out surface hydrogenation reduction on a titanium source to obtain black TiO2 powder; and (2) carrying out nitrogen doping on the black TiO2 powder to obtain the N-TiO2 catalyst. The crystal form of the N-TiO2 catalyst is an anatase type, and the N-TiO2 catalyst has oxygen vacancies and Ti < 3 + >; on the basis of the total weight of the N-TiO2 catalyst, the content of the nitrogen element is 0.4-0.5 wt%, and N atoms enter TiO2 crystal lattices in an interstitial doping (Ti-O-N) manner. The denitration efficiency of the nitrogen-doped TiO2 denitration catalyst at the temperature of 300-400 DEG C can reach 90% or above, the N2 selectivity can reach 92% or above, and the nitrogen-doped TiO2 denitration catalyst can be applied to NH3-SCR denitration.

The invention discloses a method for preparing a modified titanium dioxide nanotube dye-sensitized photoanode thin film, and belongs to the field of dye-sensitized solar cells. The method comprises the following steps of: mixing titanium salt solution and a dopant to prepare doped titanium dioxide sol A; preparing titanium dioxide nanotubes by a hydrothermal synthesis method; dipping the titaniumdioxide nanotubes in metal or non-metal dopant solution to obtain titanium dioxide nanotube powder B; mixing the powder B and the sol A and fully grinding to obtain titanium dioxide nanocrystalline slurry C; coating the sol A onto a conductive substrate and drying; coating the obtained nanocrystalline slurry C onto the conductive substrate on which the sol A is coated to obtain a titanium dioxidenanotube thin film electrode D; drying the D and performing thermal treatment to obtain a doped titanium dioxide nanotube nanocrystalline thin film electrode E; and soaking the E in ethanol solution of 4,4'-dicarboxylic bipyridyl ruthenium, washing with absolute ethanol and drying with nitrogen gas. The method has the advantages of simple preparation process, high repeatability and low cost.

The invention discloses a method for improving the field emission characteristic of film ZnO, which comprises the following steps: firstly, preparing Al doped ZnO ceramic target material; secondly, preparing Al doped ZnO film, cutting the prepared Al doped ZnO film into 0.5cm<2)> to be used as a cathode, using ITO glass as anode, separating the cathode from the anode by using glass thread with 100 micrometers of spacing, and sending KEITHLEY 2410 into a vacuum testing system for the test, wherein the vacuum degree is 5*10 <-7> Pa, the lowest voltage applied between the Al doped ZnO film of the cathode and the ITO glass of the anode is defined as the starting voltage, and the corresponding electric field is the starting field. The method improves the field emission current density of the film ZnO and reduces the field emission starting field strength.

The invention discloses a method for modulating Fermi level of an optical anode of a dye sensitized solar cell through trace N-type doping, which comprises the steps of: with a salt containing a +5 valence or +6 valence metal element is used as an N type doping source material, preparing trace N type doped titanium dioxide slurry by adopting a hydrothermal method and preparing a trace N type doped titanium dioxide nanocrystalline porous film electrode by adopting a coating method. The Fermi level of titanium dioxide nano particles is modulated through trace N type doping, which can remarkablyimprove the open-circuit voltage, the short-circuit current and the photoelectricity conversion efficiency of the dye sensitized solar cell. Meanwhile, the invention has the advantages of low cost, simple process and good repeatability, and is suitable for industrialized application.

The invention relates to a reflective broadband dynamic polarization controller based on a graphene-dielectric composite metasurface, belonging to the fields of new artificial electromagnetic materials and terahertz science and technology. The polarization controller includes a four-layer structure, the bottom layer is a metal substrate (1), the middle is a low refractive index medium (2), and the top layer is a high refractive index medium metasurface array (3) embedded in a low refractive index medium (2). ), while the upper surface of the metasurface array is exposed to the air, and there is a uniform single-layer graphene between the low-refractive index medium layer and the high-refractive index medium metasurface (4). A bias voltage control device (5) is provided between the graphene layer (4) and the metal substrate (1), and by changing the conductivity of the graphene, the linearly polarized light is converted into orthogonal linearly polarized light or circular polarized light within a certain frequency range. polarized light. The invention integrates the dual functions of a half-wave plate and a quarter-wave plate, and has the advantages of high efficiency, simple structure, easy integration and the like.

The invention relates to a method for improving performances of a dye sensitized solar cell. In the method, by temperature treatment for the sensitization process of organic dye for preparing a solar cell, open circuit voltage is increased and electrical properties are enhanced. The method is simple and easily operated and has low cost.

There is provided a thermal material comprising an electrode, a film of reduced graphene oxide, a porous membrane that is sandwiched between the electrode and the film of reduced graphene oxide, and an ionic liquid that is disposed within pores of the porous membrane. There is also provided a method of preparing a thermal material. There is further provided a method of changing an article's apparent temperature. There is further provided a device comprising the thermal material as described herein.

The invention relates to a poly-3,4-ethylenedioxythiophene-coated tungsten oxide nanorod, a preparation method and application thereof. The tungsten oxide nanowire prepared by hydrothermal reaction is dispersed in a solvent, and EDOT is added to react to obtain a blue solution , and then the PEDOT and tungsten oxide nanowires are removed by sedimentation and then dried. The process steps are simple and the conditions are mild, and uniform and neutral poly-3,4-ethylenedioxythiophene-coated tungsten oxide nanorods can be obtained; the tungsten oxide nanorods have a higher Fermi level or work function, and can Effectively reduce the corrosion of PSS to the anode substrate, thereby improving the efficiency and life of perovskite solar cells; and its energy level is closer to that of perovskite materials, and can be used as hole transport for perovskite solar cells layer, which can effectively extract and transport photogenerated holes, thereby improving the energy conversion efficiency of perovskite solar cells.

The invention provides an Al-doped ZnO nano rod as well as a preparation method and application thereof. The growth and performance of the Al-doped ZnO nano rod on a flexible substrate are researched,zinc nitrate hexahydrate, hexamethylene tetramine and aluminum oxide are used as main reactants during preparation, and a very thin ZnO seed crystal layer is firstly sputtered on the surface of a flexible substrate PET-ITO through ion sputtering; then aluminum-doped zinc oxide precursor solutions with different concentrations are prepared, and an aluminum-doped ZnO nano structure grows by a one-step hydrothermal method to obtain the Al-doped ZnO nano rod with excellent electrical properties. The product obtained by the method has a special hexagonal wurtzite type structure, has typical rectification characteristics, has a wide research prospect in novel functional devices such as diodes and the like, and is suitable for large-scale production and application.