Histamine double-iodized salt and preparation method thereof, perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of low efficiency of flexible perovskite solar cells

Pending Publication Date: 2022-07-01
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

to solve the existing SnO 2 High interface defects between the electron transport layer and the perovskite light-absorbing layer lead to low efficiency of flexible perovskite solar cells

Method used

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  • Histamine double-iodized salt and preparation method thereof, perovskite solar cell and preparation method thereof
  • Histamine double-iodized salt and preparation method thereof, perovskite solar cell and preparation method thereof
  • Histamine double-iodized salt and preparation method thereof, perovskite solar cell and preparation method thereof

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preparation example Construction

[0048] The embodiment of the present invention also discloses a histamine double iodide salt and a preparation method thereof, as well as a perovskite battery and a preparation method, comprising the following steps:

[0049] Step 1, magnetron sputtering a layer of ITO or FTO on the front of the PET substrate;

[0050] ITO or FTO with a thickness of 160 nm was deposited on the front side of the PET substrate at low temperature by magnetron sputtering technology. The PET / ITO (FTO) substrate was blown with compressed air and treated with UV ozone for 8 min.

[0051] Step 2, Preparation of SnO 2 Electron transport layer precursor solution and HADI aqueous solution;

[0052] SnO 2 The preparation method of the electron transport layer precursor solution is: SnO 2 The colloidal nanoparticles are dissolved in deionized water (V / V=1:6), and stirred for 6-12 hours for use; the preparation method of the HADI aqueous solution is: Dissolve 1-6 mg of HADI solid powder in 1 mL of deion...

Embodiment 1

[0067] First, magnetron sputtering a layer of ITO on the front side of the PET substrate: ITO with a thickness of 160 nm is deposited on the front side of the PET substrate at a low temperature by the magnetron sputtering technology. The PET / ITO substrate was blown with compressed air and treated with UV ozone for 8 min.

[0068] Second, the preparation of SnO 2 Electron transport layer precursor solution and HADI aqueous solution: SnO 2 The preparation method of the electron transport layer precursor solution is: SnO 2 The colloidal nanoparticles were dissolved in deionized water (V / V=1:6) and stirred for 6 hours for later use; the preparation method of the HADI aqueous solution was as follows: 2 mg of HADI solid powder was dissolved in 1 mL of deionized water, stirred for 2 h, and filtered for later use.

[0069] Third, preparation of SnO 2 Electron transport layer: SnO prepared in step 2 2The colloidal nanoparticle solution was spin-coated on the surface of the PET / ITO ...

Embodiment 2

[0102] In this embodiment, instead of using PET / ITO as the conductive layer, FTO is used, and the FTO substrate is cleaned in an ultrasonic cleaning machine with glass cleaner and ultrapure water (glass cleaner: ultrapure water=1:100) 30min, then replace the ultrapure water every 30min, and repeat this step 3 times. The cleaned FTO substrate was dried by compressed air, then treated with ultraviolet ozone for 15 min, and the prepared SnO was spin-coated on the FTO substrate 2 Nano colloid solution, spin coating speed is 3000rpm, spin coating time is 40s, and then annealing treatment, annealing temperature is 150 ℃, annealing time is 20min. SnO was treated with UV ozone prior to spin-coating the formulated HADI aqueous solution 2 / FTO substrate 10min. Spin-coat 2 mg / mL HADI aqueous solution on FTO / SnO 2 On the surface of the substrate, the spin coating speed is 3000 rpm, the spin coating time is 30 s, and then the annealing treatment is performed, the annealing temperature i...

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Abstract

The invention discloses a histamine double-iodized salt and a preparation method thereof, a perovskite solar cell and a preparation method, the histamine double-iodized salt is a multifunctional organic ion, the unique asymmetric structure and flexible molecular structure of HADI play a very important role in bridging SnO2/perovskite surface, and when the histamine double-iodized salt is applied to the perovskite solar cell, the histamine double-iodized salt can be used for preparing the perovskite solar cell. Wherein a-OH group on the surface of SnO2 is combined with a-NH3 group at the tail end of HADI through dehydration; pb-based defects are passivated through Lewis-acid-base interaction between Pb < 2 + > in the perovskite and imidazolium units of HADI, and migration of I-ions can be inhibited through hydrogen bonds (NH...... I) between the HADI and the perovskite. Meanwhile, the HADI has better flexibility at the SnO2/perovskite interface compared with other reported organic ammonium salts due to a flexible and long-adapted-CH2-CH2-chain.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar energy preparation, and in particular relates to a histamine double iodide salt and a preparation method thereof, as well as a perovskite solar cell and a preparation method. Background technique [0002] With the increasing demand for energy in human production and life, the reserves of traditional fossil energy such as coal, oil, and natural gas are limited and non-renewable, and they cause serious damage to the ecological environment in the process of exploitation and use. The development of new, green and renewable energy sources is imminent. Solar energy has attracted widespread attention from the society and scientific researchers due to its advantages of cleanliness, harmlessness, universality, large reserves and easy collection. Among them, new thin-film solar cells that directly convert solar energy into electrical energy have become a research hotspot in the field of scientific...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07D233/64H01L51/46H01L51/42H01L51/44H01L51/48
CPCC07D233/64H10K71/12H10K71/40H10K30/15H10K30/87H10K2102/102
Inventor 刘治科杨璐段玉伟贺锟展盛刘生忠
Owner SHAANXI NORMAL UNIV
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