45 results about "Nanocrystalline semiconductors" patented technology

A semiconductor device of p-i-n type configuration includes a p layer which is comprised of a p-doped semiconductor material, an n layer comprised of an n-doped semiconductor material and an i layer comprised of a substantially intrinsic, nanocrystalline semiconductor material interposed therebetween. The crystalline volume in the i layer decreases as the thickness of said layer increases from its interface with the n layer to its interface with the p layer. The grain size of the substantially intrinsic nanocrystalline semiconductor material may also decrease as the thickness of the i layer increases from its interface with the n layer to its interface with the p layer. The volume of regions of intermediate range order in a portion of the i layer commencing at the interface of the i layer and the p layer, and comprising no more than 50% of the thickness thereof, is greater than is the volume of regions of intermediate range order in the remainder of the i layer. Devices of this type may be used as photovoltaic devices, and may be fabricated by a plasma deposition process.

A thin film semiconductor device has a semiconductor layer including a composite / blend / mixture of an amorphous / nanocrystalline semiconductor ionic metal oxide and an amorphous / nanocrystalline non-semiconducting covalent metal oxide. A pair of terminals is positioned in communication with the semiconductor layer and define a semiconductive channel, and agate terminal is positioned in communication with the semiconductive channel and further positioned to control conduction of the channel. The invention further includes a method of depositing the mixture including using nitrogen during the deposition process to control the carrier concentration in the resulting semiconductor layer.

A photovoltaic device having multiple photoelectric conversion cells disposed in a tandem configuration and a chemical vapor deposition method for fabricating the same are disclosed. Each photoelectric conversion cell has a different band gap energy and includes a p-type semiconductor layer, an intrinsic semiconductor layer and an n-type semiconductor layer in sequential touching contact. Each semiconductor layer is formed of a nano-crystalline semiconductor containing silicon as a principal constituent. The semiconductor layer may be deposited by a novel chemical vapor deposition method which utilizes plasma and laser energies simultaneously to decompose a film forming gas, thereby forming a semiconductor film on a substrate. The chemical vapor deposition process may be carried out on a continuously conveying substrate, thereby permitting high throughput production of the photovoltaic device.

A high-conjugated semicyanine dye used as the sensitizer of solar bettery is disclosed. It has the molecular structure: electronic doner-pi conjugated system-electronic doner (D-pi-A) and the formula: D-pi-A-Q-G, and heatores high conjugated level. The nano-crystal semiconductor solar battery sensitized by it has high conversion rate and stability.

A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z≧0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.

A solar cell capable of restricting carrier loss and yields higher energy conversion efficiency than was conventionally possible and a method of producing a solar cell enabling formation of a light absorbing layer containing quantum dots through a low-temperature process using a coating or printing method requiring no vacuum equipment or complicated apparatuses. The solar cell includes a light absorbing layer containing quantum dots in a matrix layer, and the light absorbing layer is connected to an N-type semiconductor layer on one side and to a P-type semiconductor layer on the other side. In the light absorbing layer, the quantum dots are made of nanocrystalline semiconductor and arranged 3-dimensionally uniformly enough and spaced regularly so that a plurality of wave functions lie on one another between adjacent quantum dots to form intermediate bands. The matrix layer is formed of amorphous IGZO.

Low pressure sensing and imperviousness to corrosion and to the effects of harsh environments are achieved in a pressure sensor that employs a flexible membrane supporting piezoresistive elements. A plurality of piezoresistive elements are aligned substantially collinearly across one surface of the flexible membrane. Innermost piezoresistive elements are disposed in such a way that they experience tension in response to an applied pressure, whereas outermost piezoresistive elements are disposed in such a way that they experience compression in response to the same applied pressure. Contact pads for each end of each piezoresistive element allow the elements to be configured in any number of desirable arrangements. In one exemplary embodiment, four piezoresistive elements are disposed along a main central axis of the membrane. The contacts of the elements are connected to form a Wheatstone bridge. Conventional Wheatstone bridge techniques are utilized to convert an applied pressure into an output electrical signal. The membrane includes amorphous or nanocrystalline semiconductor layers grown on a flexible substrate such as Kapton or suitable plastic materials.

The invention relates to a method for producing the photoelectrode of a solar cell in which a layer of a nanocrystalline semiconductor material is applied on a substrate and then sintered at a sintering temperature. In the method, elongated particles which burn out at the sintering temperature and leave elongated cavities in the layer are introduced into the layer. The invention also relates to a solar cell having a photoelectrode which has such type cavities. The method permits producing photoelectrodes for dye solar cells which allow sufficient diffusion of the electrolyte into the photoelectrode and thus a sufficiently great photocurrent even in the case of high viscous electrolytes.

The invention relates to prepare dye sensitization nano-crystal semiconductor solar cell light anode with electric spinning, which comprises: spraying the solution contained nano-crystal semiconductor conductive substrate by electric field force to form film with porous nano structure to generate current and photo voltage. This invention needs simple devices with low cost and easy control. The product has high specific surface area and porosity. The prepared objective cell has same efficiency as cell by traditional method.

The invention is an all-solid nano crystal solar battery and making method. It smears the plasm of semiconductor nano material on the transparent base piece of the electric thin film, then making high-temperature sintering to prepare wide-band semiconductor nano crystal thin film, and then immerge in the solution to obtain sensitized dye nano crystal semiconductor electrode as anode; uses electric polymer or inorganic / electric polymer cooperative system as P-type material to smear the anode, and uses the electric base piece plated with Pt or Au as pair electrodes to compose the solar battery.

A solar cell comprises a transparent glass tube with multiple metal wires plated by film being material of wide band gap nanosemiconductor film oxide for separating electric charge. It is featured as utilizing metal wires as light positive electrode of solar cell after they are connected in parallel and led out, placing pair electrode in tube to undertake function of catalysis and electronic transmission, filling electrolyte in the tube and using seal glue to package the tube.

The invention discloses an optoelectronic integration building material based on dye-sensitized solar battery, belonging to the field of green building material. The characteristics lie in that: directly smearing nano crystal semiconductor size on an electroconductive substrate used for construction to manufacture plural of semiconductor films, absorbing the dye to manufacture a semiconductor light anode, wherein the catalyst layer of a counter electrode is composed of material playing catalytic role in oxidation reduction of electrolyte; combining the semiconductor light anode and the counter electrode, pouring electrolyte between the semiconductor light anode and the counter electrode, solidifying and adhering, introducing leads out of the semiconductor light anode and the counter electrode to carry out parallel connection, serial connection or the combination of serial connection and parallel connection so as to obtain a large area for manufacturing the optoelectronic building material. The invention has the advantages of simple technique, low cost, sun-shading, light-transmitting and good decoration effect. The optoelectronic material provided by the invention can be used around the clock, discharges no harmful gas, and is energy-saving and environment-friendly. As the cost is about one tenth of that of the silicon voltaic material, the popularizing rate and application range can be greatly enlarged.

The invention provides an inorganic-organic heterojunction all solid solar battery, comprising a substrate, a conductive oxide layer, a nanocrystalline semiconductor layer, a photosensitizer, a hole transport layer, a counter electrode and a package back plate, wherein the substrate has the characteristic of photopermeability; the conductive oxide layer is arranged on the substrate; the nanocrystalline semiconductor layer is arranged on the conductive oxide layer; the photosensitizer is coated on the nanocrystalline semiconductor layer; the hole transport layer is soaked in the nanocrystalline semiconductor layer; and the counter electrode is arranged on the hole transport layer. According to the inorganic-organic heterojunction all solid solar battery, the transparent conductive oxide layer is etched into a first transparent conductive oxide layer and a second transparent conductive oxide layer, the counter electrode is electrically connected with the first transparent conductive oxide layer by a conducting wire, and an inorganic semiconductor is taken as the photosensitizer, so that the absorption spectrum of the inorganic-organic heterojunction all solid solar battery can be expanded, an all solid structure can be realized, the manufacture cost of the battery can be reduced, and the battery is simple in manufacture and package technology, thereby being applicable to the large-area coating and the industrialized production.

The invention discloses a dye sensitized solar battery integrated by a threadlike light anode with high specific surface area for efficiently absorbing the light, the solar battery is composed of three layers of structures, wherein the first layer is a super-white glass for packaging a cover board, the second layer is a coating metallic net with high specific surface area as the light anode; the coating metallic net with high specific surface area is the metallic net which resists the corrosion of electrolyte or bandwidth gap nanometer crystal semiconductor oxide thin film that a conducting fiber net is coated through coating procedure as charge separation effect; after heat treatment, the sensitized dye is adsorbed to prepare the second layer; the third layer is a coating metal sheet as pair electrodes; the gap between the super-white glass and the coating metal sheet is packaged to form a sealed space which is replete with the electrolyte having the redox. The solar battery of the invention can efficiently collect the electrons and adsorbs more dye to further improve the light absorption of the light anode, solving the problems of large resistance of the conduction glass substrate which limits the battery efficiency, of preparation in large area and of serial, parallel connections of the assemblies, and further enhancing the efficiency of battery.

The invention discloses a dye-sensitized optotransistor and a preparation method thereof. The dye-sensitized optotransistor comprises a first electrode and a second electrode, an electrolyte, a dye sensitizer and a nanocrystal semiconductor, the electrolyte and the dye sensitizer are arranged between the first electrode and the second electrode, and the nanocrystal semiconductor is formed on the second electrode in an adherence manner. The second electrode is composed of a transparent substrate and a conducting layer formed on the transparent substrate, the conducting layer is generated by segmentation of an insulating channel to form a source electrode and a drain electrodetwo at two sides of the insulating channel and the nanocrystal semiconductor covers the insulating channel, the source electrode and the drain electrode. A second conducting layer of the second electrode is segmented into a source electrode and a drain electrode by electroetching, thus obtaining the novel dye-sensitized optotransistor based on a dye-sensitized cell unit structure. The dye-sensitized optotransistor of the invention adopts an oxide wide band gap semiconductor, which has the advantages of low material cost, insensitivity to background noise and capability of enlarging spectral response range by selection of various dyes.

The invention discloses a dye sensitized solar battery integrated by a threadlike light anode with high specific surface area for efficiently absorbing the light, the solar battery is composed of three layers of structures, wherein the first layer is a super-white glass for packaging a cover board, the second layer is a coating metallic net with high specific surface area as the light anode; the coating metallic net with high specific surface area is the metallic net which resists the corrosion of electrolyte or bandwidth gap nanometer crystal semiconductor oxide thin film that a conducting fiber net is coated through coating procedure as charge separation effect; after heat treatment, the sensitized dye is adsorbed to prepare the second layer; the third layer is a coating metal sheet as pair electrodes; the gap between the super-white glass and the coating metal sheet is packaged to form a sealed space which is replete with the electrolyte having the redox. The solar battery of the invention can efficiently collect the electrons and adsorbs more dye to further improve the light absorption of the light anode, solving the problems of large resistance of the conduction glass substrate which limits the battery efficiency, of preparation in large area and of serial, parallel connections of the assemblies, and further enhancing the efficiency of battery.

The invention relates to an electroluminescent device and a light-emitting layer and an application thereof. The light-emitting layer comprises at least one nanocrystalline semiconductor material andat least one organic light-emitting material, wherein an emission spectrum of the organic light-emitting material is at least partially overlapped with an excitation spectrum of the nanocrystalline semiconductor material; and the attenuation life of an excited state of the organic light-emitting material is greater than 1 microsecond. According to the invention, the organic light-emitting materialwith long lifetime of the excited state, specifically with the attenuation life of the excited state being over 1 microsecond, is innovatively enabled to serve as a main material, so that the energyof the organic light-emitting material can be effectively transferred to the nanocrystalline semiconductor material so as to obtain a QLED device with good performance, and the efficiency of the electroluminescent device taking the nanocrystalline semiconductor material as a light-emitting active component can be substantially improved.

A method of simultaneously fabricating at least two semiconductor devices, at least bone of which is a nanocrystal memory and at least one of which is a non-nanocrystal semiconductor device. A nanocrystal layer is formed over an oxide layer of the at least two semiconductor devices being fabricated. The nanocrystal layer is removed from at least one portion of the substrate corresponding to the at least one non-nanocrystal device being fabricated. A polycrystalline gate is formed for each of the semiconductor devices being fabricated. Doping is provided to provide the source and drain regions for each of the semiconductor devices being fabricated. The substrate is thermally treated after the doping. The thermal budget of the fabrication process is not limited by this thermal treatment.

The invention provides a flash memorizer. A charge storage layer of the memorizer is divided into two charge storage areas by an isolation medium area. The conductivity of the isolation medium area is smaller than the conductivity of the two charge storage areas. Materials of the two charge storage areas are different. Correspondingly, the invention further provides a flash memorizer manufacturing method. The isolation medium area with the smaller conductivity is adopted by the charge storage layer of the flash memorizer to isolate the two charge storage areas from each other. Stored charge interference between the two charge storage areas can be restrained, and the storage reliability of the memorizer is guaranteed. In addition, one charge storage area is made of metal nitride nanocrystalline materials, and the other charge storage area is made of non-nanocrystalline semiconductor materials with higher dielectric constant. Consequently, the influence of source injection phenomena on the storing reliability of the memorizer can be avoided in the programming process.

The invention relates to an electroluminescent layer and a preparation method thereof, electroluminescent device, Display and lighting devices, wherein the electroluminescent layer comprises a nanocrystalline semiconductor material and an Ag complex luminescent material, The Ag complex luminescent material is a monovalent silver complex luminescent material having a luminescent wavelength of 380 nm to 780 nm, and the peak emission wavelength of the Ag complex luminescent material is smaller than the peak emission wavelength of the nanocrystalline semiconductor material. The Ag complex is suitable for collecting holes not trapped by the nanocrystalline semiconductor material and forming composite excitons, and efficiently transferring energy to the nanocrystalline semiconductor material, sothat the carrier balance can be maintained and the lifetime of the electroluminescent layer and the electroluminescent device containing the electroluminescent layer can be prolonged. The Ag complexis suitable for collecting holes not trapped by the nanocrystalline semiconductor material and forming composite excitons, and transmitting energy to the nanocrystalline semiconductor material.

The invention relates to an electroluminescence device, its light-emitting layer and application. The light-emitting layer comprises at least one nanocrystalline semiconductor material, and at least one exciplex; the emission spectrum of the exciplex at least partially overlaps the excitation spectrum of the nanocrystalline semiconductor material; the exciplex The decay lifetime of the excited state of the species is longer than the decay lifetime of the excited state of the nanocrystalline semiconductor material. During the light-emitting process of the light-emitting layer of the present invention, the exciplex that forms delayed fluorescence can effectively transfer energy to the nanocrystal semiconductor material, thereby obtaining a light-emitting layer of a QLED device with high light-emitting efficiency and stability.

The invention relates to an electroluminescence device, its light-emitting layer and application. The light emitting layer comprises at least one nanocrystalline semiconductor material, and at least one organic light emitting material; the emission spectrum of the organic light emitting material overlaps at least partially the excitation spectrum of the nanocrystalline semiconductor material; the excited state of the organic light emitting material The decay lifetime is greater than 1 microsecond. The present invention innovatively uses an organic luminescent material with a long excited state lifetime, specifically an excited state decay lifetime exceeding 1 microsecond, as the host material, so that the energy of the organic luminescent material can be effectively transferred to the nanocrystal semiconductor material to obtain a High-performance QLED devices can greatly improve the efficiency of electroluminescent devices that use nanocrystalline semiconductor materials as luminescent active components.

The invention relates to an electrochemical preparation method for a ZnS nanocrystalline semiconductor precursor film or a semiconductor film. Electrolyte contains Zn<2+>, S2O3<2->, surfactant and SO3<2-> at the molar ratio of (15-20):(15-25):(0.2-0.8):(0.3+ / -0.1) as well as lithium chloride; the pH value of the electrolyte is between 2.5 and 4.5; then, the eutectoid crystallization of two elements Zn and S is realized with a constant-current method or a constant-potential method to generate a pure ZnS precursor film with a hexagonal-phase or cubic-phase structure; the obtained precursor film is kept at the constant temperature of 250-500DEG C for a period of time under the inert atmosphere protection condition; and a pure cubic-phase ZnS nanocrystalline semiconductor film with the advantages of high orientation and better crystallinity can be obtained. The method provided by the invention has the advantages of strong controllability and good repeatability. The prepared ZnS nanocrystalline semiconductor film is free from impurities and is suitable for the window layer material of a film solar cell.

The invention relates to a combined solar cell capable of improving the utilization rate of solar energy, which comprises a cell body, wherein the structure of the cell body includes a microstructuralpolymer heterojunction and a nanocrystalline discrete island array heterojunction; the outermost layer of the cell body is conductive glass, the conductive glass includes an energy level regulation layer, an electrolyte, a dye sensitization layer, a nanocrystalline semiconductor layer and a metal electrode layer in turn from top to bottom; the conductive glass is divided into a positive electrodeand a negative electrode; and the sunlight passes by the positive electrode, penetrates through a heterojunction interface and is turned into the negative electrode. The combined solar cell has the advantages that the structure is simple, the energy consumed by preparing the cell is less, and the energy recovery period is short; the combined solar cell is non-toxic and pollution-free in the production process, ultra-thin in volume and light in weight, has mechanical flexibility in particular, can be mounted to the surface of various objects without occupying space resource and destroying surface characteristics of the original covered object, and is worthy of large-scale popularization and application.

The invention is an all-solid nano crystal solar battery and making method. It smears the plasm of semiconductor nano material on the transparent base piece of the electric thin film, then making high-temperature sintering to prepare wide-band semiconductor nano crystal thin film, and then immerge in the solution to obtain sensitized dye nano crystal semiconductor electrode as anode; uses electric polymer or inorganic / electric polymer cooperative system as P-type material to smear the anode, and uses the electric base piece plated with Pt or Au as pair electrodes to compose the solar battery.

The invention relates to a combined solar battery capable of improving the solar energy utilization rate. The combined solar battery comprises a battery body, wherein the battery body structurally comprises microstructural polymer heterojunctions and nanocrystalline discrete island array heterojunctions; the outermost layer of the battery body is conductive glass; an energy level regulating layer,an electrolyte, a dye sensitization layer, a nanocrystalline semiconductor layer and a metal electrode layer are sequentially arranged in the conductive glass from top to bottom; the conductive glasscomprises a positive electrode and a negative electrode; and after sun light passes through the positive electrode and penetrates through a heterojunction interface, the electrode becomes the negative electrode. The combined solar battery has the advantages that the structure is simple; the energy consumption for battery preparation is low; the energy source recovery period is short; nontoxicityand no pollution are realized in the production process; the appearance is ultrathin; the weight is light; particularly, the mechanical softness is realized; the combined solar battery can be attachedonto the surface of various articles on the premise of not occupying the space resources and not damaging the surface features of an original covered article; and the combined solar battery is worthyof being popularized and used in a large scale.