Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electroluminescence device and its light-emitting layer and application

A technology for electroluminescent devices and light-emitting layers, which can be used in electro-solid devices, electrical components, semiconductor devices, etc., and can solve problems such as luminous efficiency gaps

Active Publication Date: 2019-07-19
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Through the improvement of nanocrystalline semiconductor materials and the continuous optimization of QLED device structure, the performance of existing QLED devices has been greatly improved, but its luminous efficiency is still far from the requirements of industrial production.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electroluminescence device and its light-emitting layer and application
  • Electroluminescence device and its light-emitting layer and application
  • Electroluminescence device and its light-emitting layer and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] The present embodiment is an electroluminescence device, the structure is:

[0062] ITO / PEDOT:PSS / PVK / PO-T2T:mCP:(CdSe / ZnSquantum dot) / PO-T2T / LiF / Al.

[0063] Among them, PO-T2T (triplet state energy level 2.99eV) and mCP (triplet state energy level 2.94eV) are used as organic materials in the light-emitting layer to form a delayed fluorescence exciplex (triplet state energy level is about 2.64eV, and the emission spectrum is in the blue light band);

[0064] Using (CdSe / ZnS quantum dot) as the nanocrystalline semiconductor material, the excitation spectrum covers the band from ultraviolet to green light, and the emission spectrum is in the red band;

[0065] The decay lifetime of the excited state of the exciplex (about 500 ns) is 10 times that of the excited state of the nanocrystalline semiconductor material (about 50 ns).

[0066] The preparation steps of the above-mentioned electroluminescent device are as follows:

[0067](1) Substrate treatment: Clean the surf...

Embodiment 2

[0077] The present embodiment is an electroluminescence device, the structure is:

[0078] ITO / PEDOT:PSS / PVK / PO-T2T:mCP:(CdSe / ZnSquantum rod) / PO-T2T / LiF / Al.

[0079] Among them, PO-T2T (triplet state energy level 2.99eV) and mCP (triplet state energy level 2.94eV) are used as organic materials in the light-emitting layer to form a delayed fluorescence exciplex (triplet state energy level is about 2.64eV, and the emission spectrum is in the blue light band);

[0080] Using (CdSe / ZnS quantum rod) as a nanocrystalline semiconductor material, the excitation spectrum covers the wavelength band from ultraviolet to green light, and the emission spectrum is in the red light band;

[0081] The decay lifetime (about 500 ns) of the excited state of the exciplex is 25 times the decay lifetime (about 20 ns) of the excited state of the quantum rod of the nanocrystalline semiconductor material.

[0082] The preparation of the above electroluminescent device is similar to that of Example 1,...

Embodiment 3

[0084] The present embodiment is an electroluminescence device, the structure of which is: ITO / PEDOT:PSS / PVK / DPTPCz:TAPC:(CdSe / ZnS quantum dot) / PO-T2T / LiF / Al.

[0085] Among them, the light-emitting layer uses DPTPCz (triplet energy level 2.77eV) and TAPC (triplet energy level 2.91eV) as organic materials to form a delayed fluorescence exciplex (triplet energy level 2.47eV, emission spectrum in the green band) ;

[0086] Using (CdSe / ZnS quantum dot) as the nanocrystalline semiconductor material, the excitation spectrum covers the band from ultraviolet to green light, and the emission spectrum is in the red band;

[0087] The decay lifetime of the excited state of the exciplex (about 2 μs) is 40 times that of the excited state of the nanocrystalline semiconductor material (about 50 ns).

[0088] The preparation steps of the above-mentioned electroluminescent device are as follows:

[0089] (1) Substrate treatment: Clean the surface of the substrate with glass cleaner and pure...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an electroluminescence device, its light-emitting layer and application. The light-emitting layer comprises at least one nanocrystalline semiconductor material, and at least one exciplex; the emission spectrum of the exciplex at least partially overlaps the excitation spectrum of the nanocrystalline semiconductor material; the exciplex The decay lifetime of the excited state of the species is longer than the decay lifetime of the excited state of the nanocrystalline semiconductor material. During the light-emitting process of the light-emitting layer of the present invention, the exciplex that forms delayed fluorescence can effectively transfer energy to the nanocrystal semiconductor material, thereby obtaining a light-emitting layer of a QLED device with high light-emitting efficiency and stability.

Description

technical field [0001] The invention relates to the technical field of light-emitting devices, in particular to an electroluminescence device, a light-emitting layer and applications thereof. Background technique [0002] Nanocrystalline semiconductor materials, also known as nanocrystals, are composed of a limited number of atoms, and at least two dimensions are on the order of nanometers. The two-dimensional space is restricted, and the quantum confinement effect is particularly significant. When excited by light or electricity, nanocrystalline semiconductor materials will emit a spectrum with a very narrow half-peak width (usually less than 40nm), and the luminous color is mainly determined by the particle size. Stability and other characteristics. [0003] Due to the advantages of high luminous efficiency, controllable luminous color, and high color purity, nanocrystalline semiconductor materials have great application potential in next-generation display technologies....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H10K99/00
CPCH10K50/115H10K50/13H10K50/85H10K85/1135H10K85/146H10K85/654H10K85/6572H10K50/121H10K2101/90H10K71/12
Inventor 李哲谢相伟宋晶尧付东
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com