Electroluminescent device and light-emitting layer and application thereof

A technology of electroluminescent devices and light-emitting layers, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., and can solve problems such as the gap in luminous efficiency

Active Publication Date: 2018-07-31
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Through the improvement of nanocrystalline semiconductor materials and the continuous optimization of QLED device structure, the performance of existing QLED devices has been greatly improved, but its luminous efficiency is still far from the requirements of industrial production.

Method used

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  • Electroluminescent device and light-emitting layer and application thereof
  • Electroluminescent device and light-emitting layer and application thereof
  • Electroluminescent device and light-emitting layer and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] The present embodiment is an electroluminescence device, the structure is:

[0062] ITO / PEDOT:PSS / TFB / DCzIPN:(CdSe / ZnS quantum dot) / PO-T2T / LiF / Al.

[0063] Among them, the light-emitting layer uses the organic material DCzIPN as the energy donor material, the decay lifetime of the excited state is 1.2 microseconds, the peak wavelength of the emission spectrum is 447nm, and the energy level difference between the singlet state and the triplet state is 0.05eV;

[0064] CdSe / ZnS quantum dots (CdSe / ZnS quantum dots) are used as nanocrystalline semiconductor materials, the decay lifetime of the excited state is 0.05 microseconds, and the peak wavelength of the emission spectrum is 626nm.

[0065] The preparation steps of the above-mentioned electroluminescent device are as follows:

[0066] (1) Substrate treatment: Clean the surface of the substrate with glass cleaner and pure water successively, dry it with nitrogen, bake it at 150°C for 1 hour, and treat it with UV for 5 ...

Embodiment 2

[0072] The present embodiment is an electroluminescence device, the structure is:

[0073] ITO / PEDOT:PSS / TFB / DCzTrz:(InP / ZnSeS quantum dot) / PO-T2T / LiF / Al.

[0074] Among them, the light-emitting layer uses the organic material DCzTrz as the energy donor material, the decay lifetime of the excited state is 3.1 microseconds, the peak wavelength of the emission spectrum is 440nm, and the energy level difference between the singlet state and the triplet state is 0.25eV;

[0075] Taking InP / ZnSeS quantum dot (InP / ZnSeS quantum dot) as the nano-crystal semiconductor material, the decay lifetime of the excited state is 0.03 microseconds, and the emission spectrum peak wavelength is 520nm.

[0076] The above electroluminescent device was prepared similarly to Example 1.

Embodiment 3

[0078] The present embodiment is an electroluminescence device, the structure is:

[0079] ITO / PEDOT:PSS / TFB / CPC:(CdSe / ZnS quantum dot) / PO-T2T / LiF / Al.

[0080] Among them, the light-emitting layer uses the organic material CPC as the energy donor material, the decay lifetime of the excited state is 47 microseconds, the peak wavelength of the emission spectrum is 490nm, and the energy level difference between the singlet state and the triplet state is 0.04eV;

[0081] Taking (CdSe / ZnS quantum dot) as a nanocrystalline semiconductor material, the decay lifetime of its excited state is 0.05 microseconds, and the peak wavelength of the emission spectrum is 626nm.

[0082] The above electroluminescent device was prepared similarly to Example 1.

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Abstract

The invention relates to an electroluminescent device and a light-emitting layer and an application thereof. The light-emitting layer comprises at least one nanocrystalline semiconductor material andat least one organic light-emitting material, wherein an emission spectrum of the organic light-emitting material is at least partially overlapped with an excitation spectrum of the nanocrystalline semiconductor material; and the attenuation life of an excited state of the organic light-emitting material is greater than 1 microsecond. According to the invention, the organic light-emitting materialwith long lifetime of the excited state, specifically with the attenuation life of the excited state being over 1 microsecond, is innovatively enabled to serve as a main material, so that the energyof the organic light-emitting material can be effectively transferred to the nanocrystalline semiconductor material so as to obtain a QLED device with good performance, and the efficiency of the electroluminescent device taking the nanocrystalline semiconductor material as a light-emitting active component can be substantially improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting devices, in particular to an electroluminescence device, a light-emitting layer and applications thereof. Background technique [0002] Nanocrystalline semiconductor materials, also known as nanocrystals, are composed of a limited number of atoms, and at least two dimensions are on the order of nanometers. The two-dimensional space is restricted, and the quantum confinement effect is particularly significant. When excited by light or electricity, nanocrystalline semiconductor materials will emit a spectrum with a very narrow half-peak width (usually less than 40nm), and the luminous color is mainly determined by the particle size. Stability and other characteristics. [0003] Due to the advantages of high luminous efficiency, controllable luminous color, and high color purity, nanocrystalline semiconductor materials have great application potential in next-generation display technologies....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/625H10K50/115H10K2102/00H10K71/00
Inventor 李哲谢相伟宋晶尧付东
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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