Electroluminescent layer and preparation method thereof, electroluminescent device, display and illumination device

A technology of electroluminescent layer and luminescent material, which is applied in the fields of electroluminescent layer and its preparation, display and lighting devices, and electroluminescent devices, and can solve the problems of low lifespan of QLED devices

Inactive Publication Date: 2018-12-11
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide an electrol

Method used

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  • Electroluminescent layer and preparation method thereof, electroluminescent device, display and illumination device
  • Electroluminescent layer and preparation method thereof, electroluminescent device, display and illumination device
  • Electroluminescent layer and preparation method thereof, electroluminescent device, display and illumination device

Examples

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preparation example Construction

[0071] The present invention provides a method for preparing an electroluminescent device in an embodiment, comprising the following steps:

[0072] Step S1: providing a substrate.

[0073] Step S2: sequentially forming the first electrode layer, the electroluminescent layer and the second electrode layer on the substrate. It can be understood that the provided substrate may have the first electrode layer, and when the first electrode layer is provided on the substrate, it is not necessary to prepare the first electrode layer.

[0074] The present invention also provides a method for preparing the above-mentioned electroluminescent layer according to an embodiment, including the method of film formation by blending and / or film formation separately.

[0075] In one embodiment, the preparation step of the film-forming method by blending includes: blending the nanocrystalline semiconductor material and the Ag complex luminescent material and forming a film to obtain an electrolu...

Embodiment 1

[0091] The structure of an electroluminescent device is: ITO / PEDOT:PSS / PVK / mCP:Ag 2 Cl 2 (dppb) 2 :(CdSe / ZnS quantum dots) / PO-T2T / LiF / Al.

[0092] The preparation method of the above-mentioned electroluminescent device is as follows:

[0093] (1) Substrate treatment: Clean the surface of the substrate successively with glass cleaner and pure water, dry it with nitrogen, bake it at 150°C for 0.5-1.5 hours, and treat it with UV for 5-10 minutes in the atmospheric environment to obtain a clean substrate and ITO surfaces.

[0094] (2) Preparation of hole injection layer: Spin-coat PEDOT:PSS ink at a speed of 3000rpm / min for 20-30 seconds, and then bake at 110°C-120°C for 10-20 minutes to obtain a hole injection layer film.

[0095] (3) Preparation of hole transport layer: Spin-coat PVK ink (concentration: 5mg / mL) at a speed of 1500rpm / min, spin-coat for 20-30 seconds, and then bake at 150°C-160°C for 20-30 minutes to obtain holes Transport layer film.

[0096] (4) Preparatio...

Embodiment 2

[0099] The structure of an electroluminescent device is: ITO / PEDOT:PSS / PVK / mCP:Ag 2 Cl 2 (dppb) 2 :(CdSe / ZnS quantum rod) / PO-T2T / LiF / Al.

[0100] The preparation method of the above-mentioned electroluminescent device is basically the same as that of Example 1, except that the preparation method of the electroluminescent layer is different, specifically: the ink of the electroluminescent layer contains 8 mg / mL of mCP, 8 mg / mL of Ag 2 Cl 2 (dppb) 2 and 16mg / mL CdSe / ZnS quantum rods.

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Abstract

The invention relates to an electroluminescent layer and a preparation method thereof, electroluminescent device, Display and lighting devices, wherein the electroluminescent layer comprises a nanocrystalline semiconductor material and an Ag complex luminescent material, The Ag complex luminescent material is a monovalent silver complex luminescent material having a luminescent wavelength of 380 nm to 780 nm, and the peak emission wavelength of the Ag complex luminescent material is smaller than the peak emission wavelength of the nanocrystalline semiconductor material. The Ag complex is suitable for collecting holes not trapped by the nanocrystalline semiconductor material and forming composite excitons, and efficiently transferring energy to the nanocrystalline semiconductor material, sothat the carrier balance can be maintained and the lifetime of the electroluminescent layer and the electroluminescent device containing the electroluminescent layer can be prolonged. The Ag complexis suitable for collecting holes not trapped by the nanocrystalline semiconductor material and forming composite excitons, and transmitting energy to the nanocrystalline semiconductor material.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an electroluminescence layer and a preparation method thereof, an electroluminescence device, a display and an illumination device. Background technique [0002] Nanocrystalline semiconductor materials, also known as nanocrystals, are composed of a limited number of atoms and have significant quantum confinement effects. Nanocrystalline semiconductor materials are excited by light or electricity, and emit a spectrum with a narrow half-width (usually less than 40nm). The light emission has the characteristics of high light color purity, high luminous quantum efficiency, and stable performance. Due to the advantages of high luminous efficiency, controllable luminous color, and high color purity, nanocrystalline semiconductor materials have great application potential in next-generation display technologies. [0003] As a new light-emitting device, electroluminescent devices made ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/371H10K50/115H10K2102/00H10K2101/30H10K71/00
Inventor 李哲谢相伟宋晶尧付东
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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