Al-doped ZnO nano rod as well as preparation method and application thereof

A technology of nanorods and seed layers, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, and can solve the problems that ZnO nanomaterials are not fully utilized.

Pending Publication Date: 2021-02-26
SHAANXI SCI TECH UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of Al-doped ZnO nano-rod and its preparation method and application, to solve the problem that most of the doped substances in the prior art are precious metals, the preparation of ZnO nano-material has no fully exploited issues

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  • Al-doped ZnO nano rod as well as preparation method and application thereof
  • Al-doped ZnO nano rod as well as preparation method and application thereof
  • Al-doped ZnO nano rod as well as preparation method and application thereof

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preparation example Construction

[0034] The invention discloses an Al-doped ZnO nanorod and its preparation method and application. The preparation method comprises the following steps:

[0035] The first step of flexible substrate preparation: Cut the PET-ITO flexible substrate into a square of 1.0cm×1.0cm, clean it ultrasonically with acetone (10min) and ethanol (10min), take it out and transfer it to deionized water, Clean again with ultrasonic waves for 10 minutes, then take out the PET-ITO flexible substrate, put it in an oven, and dry it at 70°C for later use, so that the PET-ITO flexible substrate remains dry. During the growth process on the PET-ITO surface, it will seriously affect the growth of the final ZnO nanorods on the PET-ITO surface.

[0036]The second step is to sputter the PET-ITO flexible substrate and plate the seed layer: deposit the dried PET-ITO flexible substrate on the substrate by radio frequency magnetron sputtering (using high-purity ZnO sheet as the target material) ZnO seed lay...

Embodiment 1

[0048] 1) Plating a ZnO seed layer on the surface of the PET-ITO substrate with an ion sputtering coater, the pressure is 10Pa, and the current is 6mA for 1min, and the current is 8mA for 4min;

[0049] 2) Prepare the precursor solution, Zn(NO 3 ) 2 ·6H 2 O, C 6 h 12 N 4 and Al 2 o 3 The molar ratio of Zn(NO 3 ) 2 ·6H 2 O and C 6 h 12 N 4 The molar concentration is 0.05mol / L, Al 2 o 3 The molar concentration is 0.005mol / L, and the magnetic stirrer stirs for 20min;

[0050] 3) Transfer the obtained precursor solution to a 40ml closed polytetrafluoroethylene stainless steel autoclave. Then, the substrate on which the ZnO seed layer has been deposited is vertically immersed in the precursor solution, and then placed in an oven to react at a constant temperature of 95°C for 3 hours, cooled to room temperature naturally, then taken out, and repeatedly washed with distilled water and absolute ethanol to remove the residues on the surface. salt, and dried at 60°C for ...

Embodiment 2

[0053] 1) Plating a ZnO seed layer on the surface of the PET-ITO substrate with an ion sputtering coater, the pressure is 10Pa, and the current is 6mA for 1min, and the current is 8mA for 4min;

[0054] 2) Prepare the precursor solution, Zn(NO 3 ) 2 ·6H 2 O, C 6 h 12 N 4 and Al 2 o 3 The molar ratio of Zn(NO 3 ) 2 ·6H 2 O and C 6 h 12 N 4 The molar concentration is 0.05mol / L, Al 2 o 3 The molar concentration is 0.025mol / L, and the magnetic stirrer stirs for 20min;

[0055] 3) Transfer the obtained precursor solution to a 40ml closed polytetrafluoroethylene stainless steel autoclave. Then, the substrate on which the ZnO seed layer has been deposited is vertically immersed in the precursor solution, and then placed in an oven to react at a constant temperature of 95°C for 3 hours, cooled to room temperature naturally, then taken out, and repeatedly washed with distilled water and absolute ethanol to remove the residues on the surface. salt, and dried at 60°C for ...

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Abstract

The invention provides an Al-doped ZnO nano rod as well as a preparation method and application thereof. The growth and performance of the Al-doped ZnO nano rod on a flexible substrate are researched,zinc nitrate hexahydrate, hexamethylene tetramine and aluminum oxide are used as main reactants during preparation, and a very thin ZnO seed crystal layer is firstly sputtered on the surface of a flexible substrate PET-ITO through ion sputtering; then aluminum-doped zinc oxide precursor solutions with different concentrations are prepared, and an aluminum-doped ZnO nano structure grows by a one-step hydrothermal method to obtain the Al-doped ZnO nano rod with excellent electrical properties. The product obtained by the method has a special hexagonal wurtzite type structure, has typical rectification characteristics, has a wide research prospect in novel functional devices such as diodes and the like, and is suitable for large-scale production and application.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to an Al-doped ZnO nanorod and a preparation method and application thereof. 【Background technique】 [0002] As a direct bandgap wide bandgap semiconductor material, ZnO has a bandgap width of 3.37eV and a high exciton binding energy of about 60meV. It has abundant reserves, low cost and excellent optical and electrical properties, which make its related device development and application obtainable. It develops rapidly and has broad application prospects in the fields of UV photodetectors, field emission arrays, gas sensors, solar cells, and acoustic wave devices. For nanomaterials, doping has a more significant change in the properties of nanomaterials, because the number of atoms after doping is small and most of them are on the surface of nanomaterials. [0003] At present, the synthesis methods of ZnO nanomaterials include evaporation method, sol-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/03H01L29/227H01L29/861B82Y30/00B82Y40/00
CPCC01G9/03B82Y30/00B82Y40/00H01L29/227H01L29/861C01P2004/16C01P2006/40C01P2002/72C01P2004/03C01P2004/04
Inventor 于琦蒋剑超容萍姜立运
Owner SHAANXI SCI TECH UNIV
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