Organic semiconductor device

Abstract

Provided is an organic semiconductor device suitable for integration by having an organic thin film transistor of low voltage drive and high drive current. The organic semiconductor device is provided with the organic thin film transistor. The thin film transistor is provided with a substrate (10); a gate electrode (12) arranged on the substrate (10); a first gate insulating film (15) arranged on the gate electrode (12); a second gate insulating film (17) arranged on the first gate insulating film (15); source electrodes (16, 20) and drain electrodes (18, 22) arranged on the second gate insulating film (17) and are composed of a laminated structure of first metal layers (16, 18) and second metal layers (20, 22); and an organic semiconductor layer (24) arranged between the source electrodes (16, 20) and the drain electrodes (18, 22) on the gate insulating film (17). The first gate insulating film (15) is composed of an insulating film having a dielectric constant higher than that of the second gate insulating film (17), the second gate insulating film (17) is composed of a silicon oxide film thinner than the first gate insulating film (15), and a laminated type gate insulating film structure is provided as a whole.

Description

technical field [0001] The present invention relates to an organic semiconductor device, in particular to a laminated structure with a high dielectric constant insulating film and an extremely thin oxide film, or using a material with a large work function for source / drain electrodes to improve transistor performance organic semiconductor devices. Background technique [0002] As a circuit element using an organic semiconductor, a circuit element that can stably maintain the properties of an organic semiconductor for a long time, exhibit high durability against various external stresses, shocks, and the like, and has excellent reliability ( For example, see Patent Document 1). In the circuit element of Patent Document 1, there is provided a circuit element obtained by forming a circuit portion including an organic semiconductor on a substrate, and the circuit element is characterized by having a circuit portion for surrounding the circuit portion so that the circuit portion...

AI Technical Summary

Problems solved by technology

[0004] In addition, tantalum oxide (tantalum oxide: Ta 2 o 5 ) film has high dielectric constant (the relative dielectric constant of the bulk material is 25), therefore, when it is used as a gate insulating film of a transistor, it may cause a large reduction in gate driving voltage; and therefore which has 2 o 5 Due to the hysteresis characteristics caused by the internal defects of the film itself and bonding, it is impossible to use the tantalum oxide film as a stable gate insulating film, and it is difficult to achieve high performance transistors

[0005] In addition, when a tantalum oxide film is used as a gate insulating film of an organic transistor, surface modification becomes extremely difficult, and good orientation control of the organic semiconductor material cannot be performed, and it is difficult to improve the characteristics of the organic transistor (low voltage drive, high drive current)

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