SiC light-activated thyristor with NiO/SiC heterogeneous emitter junction

Abstract

The invention discloses a NiO / SiC heterogeneous emitter junction structure. The invention also discloses a SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction. The SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction comprises a substrate and an insulating dielectric film; an n-SiC buffer layer is manufactured at the upper surface of the substrate; a p-SiC buffer layer is manufactured at the upper surface of the n-SiC buffer layer; a p-SiC long base region is manufactured at the upper surface of the p-SiC buffer layer; an n-SiC short base region is manufactured at the upper surface of the p-SiC long base region; a p-NiO emitter region is manufactured at the upper surface of the n-SiC short base region; the upper end surface of each lug boss of the p-NiO emitter region is covered with positive electrodes; and the lower end surface of the substrate is covered with negative electrodes. The SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction has a higher hole injection capacity; and the dredging performance is improved obviously.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a NiO / SiC heterogeneous emission junction structure, and also relates to a SiC light-triggered thyristor containing a NiO / SiC heterogeneous emission junction. Background technique [0002] Silicon carbide (SiC) material has the advantages of large band gap, high thermal conductivity, high critical avalanche breakdown electric field strength, high saturated carrier drift velocity and good thermal stability, etc. Power electronic devices made of SiC have lower The on-state voltage drop, higher operating frequency, lower power consumption, smaller size and better high temperature resistance characteristics are more suitable for power electronic circuits. As one of SiC high-voltage devices, silicon carbide thyristors have the advantages of high blocking voltage, strong flow capacity, large safe operating area (SOA) and no influence on the reliability of the gate oxide lay...

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a NiO / SiC heterogeneous emitter junction structure, which solves the problems of low hole injection efficiency, large turn-on delay time and high trigger optical power required by the existing SiCLTT anode emitter junction

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