Method for treating organic light emitting device metal anode

An organic light-emitting device and metal anode technology, which is applied in the processing field of metal anodes of organic light-emitting devices, can solve problems such as poor conductivity, high driving voltage, and large internal tension of nickel film, achieve high hole injection performance, improve brightness and efficiency, The method of processing the effect is simple

Inactive Publication Date: 2007-06-27
INESA ELECTRON
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Problems solved by technology

Because the conductivity of indium tin oxide is not particularly ideal, and the price is relatively expensive, and it lacks light reflection characteristics, it is not suitable for the anode of the top-emitting device. Usually, a metal with a high work function is used as the anode of the top-emitting device. The commonly used metals are nickel, Gold, etc., and the conductivity of nickel is poor, and more complicated electron beam film forming equipment is usually used, and the internal tension of the nickel film is very large, which is not conducive to its adhesion on the substrate and is easy to fall off from the substrate, while go

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Embodiment Construction

[0009] The following are further detailed descriptions of the embodiments of the present invention, but the embodiments are not intended to limit the present invention, and all similar methods and similar changes of the present invention should be included in the protection scope of the present invention.

[0010] A treatment method for the silver anode of an organic light-emitting device provided by an embodiment of the present invention is to fill the plasma processing chamber with an argon-oxygen mixture, the flow rate of oxygen is 10 standard ml / min, and the flow rate of argon gas is 100 standard ml / min. Minutes, the pressure of the mixed gas is 6.5 Pascals, and a radio frequency electric field is added to the mixed gas to excite plasma, and the substrate is put into it for processing. The frequency of the radio frequency is 13.6 MHz, the power density is 1250 watts / square meter, and the treatment time is 15 seconds; after the silver surface treatment, the brightness of the...

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Abstract

This invention relates to a process method for metal anode of organic light emission devices characterizing in carrying out metal surface process to the base board of a metal anode in plasma with oxygen component, namely, putting the base board in plasma process cavity charged with mixed gas containing oxygen and with radio field to generate a thin oxide layer on the surface of the metal anode to increase the power function of the metal surface and cavity injection ability, and said metal may be Ag or Ni.

Description

technical field [0001] The invention relates to the technical field of electronic display devices, in particular to a processing technology for a metal anode of an organic light-emitting device. Background technique [0002] At present, the anode of organic light-emitting devices usually uses indium tin oxide material, which is because indium tin oxide has a higher work function, which is helpful for hole injection, and indium tin oxide is a transparent conductive material, so that the light emission of the device can be Release through it. However, for top-emitting devices, the luminescence of the device can be released through a transparent cathode, which does not require the anode to have transparent characteristics, which increases the selection range of the anode. Because the conductivity of indium tin oxide is not particularly ideal, and the price is relatively expensive, and it lacks light reflection characteristics, it is not suitable for the anode of the top-emitti...

Claims

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Application Information

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IPC IPC(8): H01L51/56H05B33/10
Inventor 陈科肖田黄浩
Owner INESA ELECTRON
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