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Method for improving hole injection ability of ITO transparent conductive film and application of ITO transparent conductive film

A transparent conductive film, hole injection technology, applied in circuits, electrical components, electric solid devices, etc., can solve the problem of limited hole injection ability on the surface of ITO, and achieve improved surface morphology, easy industrial production, and high efficiency. good film effect

Active Publication Date: 2014-08-27
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For this reason, what the present invention is to solve is the limited problem of improving the hole injection ability of the ITO surface in the prior art, and a method for improving the hole injection ability of the ITO transparent conductive film is provided

Method used

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  • Method for improving hole injection ability of ITO transparent conductive film and application of ITO transparent conductive film
  • Method for improving hole injection ability of ITO transparent conductive film and application of ITO transparent conductive film
  • Method for improving hole injection ability of ITO transparent conductive film and application of ITO transparent conductive film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] First, place the ITO transparent conductive film (the electrode pattern has been etched) under the ultraviolet lamp, and perform UV light for 5 minutes;

[0061] Then, put the treated ITO transparent conductive film into 0.1% C by volume 6 h 15 ClO 3 Soak in the mixture of Si and solvent ultra-dry toluene for 4 hours;

[0062] Then put the soaked ITO transparent conductive film into the ethanol solution, and perform ultrasonication for 10 minutes to remove other residual solvents; dry it to obtain an ITO transparent conductive film with high hole injection ability.

Embodiment 2

[0064] First, place the ITO transparent conductive film (the electrode pattern has been etched) under the ultraviolet lamp, and perform UV light for 8 minutes;

[0065] Then, put the treated ITO transparent conductive film into 4% C by volume 6 h 15 ClO 3 Si and C 6 h 15 BrO 3 Soak in Si mixture (volume ratio 1:1) and solvent ultra-dry toluene mixture, time is 2 hours;

[0066] Then put the soaked ITO transparent conductive film into the ethanol solution, perform ultrasonication for 8 minutes, remove other residual solvents; dry it, and obtain the ITO transparent conductive film with high hole injection ability.

Embodiment 3

[0068] First, place the ITO transparent conductive film (the electrode pattern has been etched) under the ultraviolet lamp, and perform UV light for 5 minutes;

[0069] Then, put the treated ITO transparent conductive film into 2% C by volume 7 h 17 ClO 3 Soak in the mixture of Si and solvent ultra-dry toluene for 5 hours;

[0070] Then put the soaked ITO transparent conductive film into the ethanol solution, and perform ultrasonication for 6 minutes to remove other residual solvents; blow dry, and the ITO surface treatment is completed, and the ITO transparent conductive film with high hole injection ability is obtained .

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Abstract

The invention relates to a method for improving the hole injection ability of an ITO transparent conductive film. The method comprises the steps: S1, adding one or two compounds of a structure shown in the structural formula (I) to a solvent ultra-dry benzene solution and fully mixing the compounds and the solvent ultra-dry benzene solution, wherein the volume ratio of the compounds to the solvent ultra-dry benzene solution is 0.1%-5%; S2, after UV light treatment is carried out on the surface of the ITO transparent conductive film, soaking the surface of the ITO transparent conductive film into the mixed solution prepared in the S1; S3, taking out the ITO transparent conductive film soaked in the S2, and purifying and drying the ITO transparent conductive film in an alcoholic solution to obtain the ITO transparent conductive film with the high hole injection ability.

Description

technical field [0001] The invention belongs to the technical field of surface treatment of conductive thin films, and in particular relates to a method for improving the hole injection ability of ITO transparent conductive thin films and its application in organic electroluminescent devices. Background technique [0002] Indium tin oxide (English full name is Indium tin oxide, referred to as ITO) transparent conductive film not only has excellent electrical conductivity, but also has a light transmittance of 90%, and is transparent; it is widely used as an organic electroluminescent device (English full name It is an electrode in devices such as Organic Light-Emitting Diode, referred to as OLED), liquid crystal display device (English full name is Liquid crystal displays, referred to as LCD), organic photovoltaic cell (English full name is Organic Photovoltaic, referred to as OPVs), and can also be It doubles as a light-transmitting window. [0003] In addition to its domi...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/54
CPCH10K71/00
Inventor 邱勇段炼赵炎
Owner TSINGHUA UNIV
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