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Electrode and preparation method thereof

A technology of electrode and indium tin oxide, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of poor hole injection ability of electroluminescent materials, and achieve the effect of strong hole injection ability

Active Publication Date: 2020-10-13
浩物电子科技(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, ITO itself has obvious shortcomings. The surface work function of ITO is about 4.6-5.1eV, and the lower work function leads to its poor ability to inject holes into electroluminescent materials.

Method used

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  • Electrode and preparation method thereof
  • Electrode and preparation method thereof

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Embodiment 1

[0028] figure 1 Electrode structure diagram provided for the embodiment of the present invention. Such as figure 1 As shown, the electrode in the present invention is provided with substrate, SiO 2 film, a first indium tin oxide layer, and a second indium tin oxide layer.

[0029] In this embodiment, the substrate is soda lime glass. SiO 2 The membrane is an alkaline ion blocking layer in the electrode, which can prevent the alkaline ions in the soda lime glass from entering the first indium tin oxide layer, maintain ion balance, and ensure the performance of the electrode. The composition ratio of Sn and In in the first ITO layer may be 5%-10%. The composition ratio of Sn and In in the second indium tin oxide layer may be 50% or more.

Embodiment 2

[0031] In order to make the electrode have a high work function and a strong ability to inject holes, the invention also provides an electrode preparation method. Methods include:

[0032] Step 1: Deposit a layer of SiO on the substrate 2 membrane. In this embodiment, the substrate may be soda lime glass. The specific process is: deposit a layer of SiO on soda-lime glass using chemical vapor deposition, physical vapor deposition or sol-gel method. 2 membrane. SiO 2 The membrane can be used as an alkaline ion blocking layer to prevent alkaline ions in the soda lime glass from entering the first indium tin oxide layer to destroy ion balance and affect electrode performance.

[0033] Step 2: Prepare the first indium tin organic complex solution, wherein the proportions of tin and indium are respectively controlled at 5%-10%; atomize the first indium tin organic complex solution; atomize the atomized The first complex is decomposed into indium oxide and tin oxide; then the i...

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Abstract

The invention relates to an electrode and a preparation method thereof. The electrode is sequentially provided with a substrate, a SiO2 film, a first indium tin oxide layer and a second indium tin oxide layer from bottom to top, and the composition ratio of Sn to In in the second indium tin oxide layer is 50% or more. The preparation method of the electrode comprises the following steps: depositing a layer of SiO2 film on a substrate; preparing a first indium tin oxide layer; and preparing an indium-tin organic complex solution, controlling the ratio of tin to indium to be 50% or above, decomposing the atomized complex into indium oxide and tin oxide, and diffusing and depositing the indium oxide and the tin oxide on the first indium-tin oxide layer to form a second indium-tin oxide layer.According to the invention, the balance between a high-power function and low resistance can be realized by changing the composition ratio of Sn to In in the second indium tin oxide layer; in addition, the ITO film rich in Sn, namely the second indium tin oxide layer, can be combined with the common ITO film, namely the first indium tin oxide layer, so that the surface work function of the electrode is very high and can reach 5.7 eV, and the hole injection capacity is high.

Description

technical field [0001] The invention relates to the technical field of electrode preparation, in particular to an electrode and a preparation method thereof. Background technique [0002] Organic solar cells are a new type of solar cells developed in the 1990s, which use organic semiconductors as active materials for photoelectric conversion. Compared with inorganic solar cells, it has the advantages of low cost, thin thickness, light weight, simple manufacturing process, and can be made into large-area flexible devices. With broad development and application prospects, it has become one of the most dynamic and vibrant research frontiers in the field of new materials and new energy. [0003] At present, when preparing organic photovoltaic cells, ITO (indium tin oxide) is often used as a conductive anode to inject holes into the electroluminescent material. However, ITO itself has obvious shortcomings. The surface work function of ITO is about 4.6-5.1eV, and the lower work ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224
CPCH01L31/022425H01L31/022475
Inventor 魏斌廖翊诚邵林
Owner 浩物电子科技(苏州)有限公司
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