A kind of method and its application of improving hole injection ability of ito transparent conductive film

A technology of transparent conductive film and hole injection, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problem of limited hole injection ability on the surface of ITO, and achieve improved surface morphology, easy industrial production, and integrated good film effect

Active Publication Date: 2016-07-13
TSINGHUA UNIV +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For this reason, what the present invention is to solve is the limited problem of improving the hole injection ability of the ITO surface in the prior art, and a method for improving the hole injection ability of the ITO transparent conductive film is provided

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of method and its application of improving hole injection ability of ito transparent conductive film
  • A kind of method and its application of improving hole injection ability of ito transparent conductive film
  • A kind of method and its application of improving hole injection ability of ito transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] First, place the ITO transparent conductive film (electrode pattern etched) under an ultraviolet lamp and perform UV light for 5 minutes;

[0061] Then, put the processed ITO transparent conductive film into C with a volume ratio of 0.1% 6 H 15 ClO 3 Soak in a mixture of Si and solvent ultra-dry toluene for 4 hours;

[0062] Then put the immersed ITO transparent conductive film into the ethanol solution and perform ultrasound for 10 minutes to remove other residual solvents; blow dry to obtain an ITO transparent conductive film with high hole injection capability.

Embodiment 2

[0064] First, place the ITO transparent conductive film (the electrode pattern has been etched) under an ultraviolet lamp and perform UV light for 8 minutes;

[0065] Then, put the processed ITO transparent conductive film into C with a volume ratio of 4% 6 H 15 ClO 3 Si and C 6 H 15 BrO 3 Soak in the Si mixture (volume ratio 1:1) and the solvent ultra-dry toluene mixture for 2 hours;

[0066] Then put the immersed ITO transparent conductive film into the ethanol solution and perform ultrasound for 8 minutes to remove other residual solvents; blow dry to obtain an ITO transparent conductive film with high hole injection capability.

Embodiment 3

[0068] First, place the ITO transparent conductive film (electrode pattern etched) under an ultraviolet lamp and perform UV light for 5 minutes;

[0069] Then, put the processed ITO transparent conductive film into C with a volume ratio of 2% 7 H 17 ClO 3 Soak in a mixture of Si and solvent ultra-dry toluene for 5 hours;

[0070] Then put the immersed ITO transparent conductive film into the ethanol solution, and perform ultrasound for 6 minutes to remove other residual solvents; blow dry, and the ITO surface treatment is completed to obtain an ITO transparent conductive film with high hole injection ability .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a method for improving the hole injection ability of ITO transparent conductive film, which comprises the following steps: S1, adding one or two compounds of the structure shown in the structural formula (I) in the solvent ultra-dry benzene solution, said The volume ratio of the compound to the solvent ultra-dry benzene solution is 0.1%-5%, and they are fully mixed; S2, after treating the surface of the ITO transparent conductive film by UV light, soak the surface of the ITO transparent conductive film in the mixed solution prepared in step S1 ; S3, taking out the ITO transparent conductive film soaked in step S2, ultrasonically removing impurities in an alcohol solution, and drying to obtain an ITO transparent conductive film with high hole injection capability.

Description

Technical field [0001] The invention belongs to the technical field of conductive film surface treatment, and specifically relates to a method for improving the hole injection capability of an ITO transparent conductive film and its application in an organic electroluminescent device. Background technique [0002] Indium tin oxide (English full name Indiumtinoxide, abbreviated as ITO) transparent conductive film not only has excellent electrical conductivity, but also has a light transmittance of 90%, with transparent characteristics; it is widely used as an organic electroluminescent device (English full name is OrganicLight -EmittingDiode, abbreviated as OLED), liquid crystal display devices (English full name Liquidcrystaldisplays, abbreviated LCD), organic photovoltaic cells (English full name OrganicPhotovoltaic, abbreviated as OPVs) and other devices can also be used as light-transmitting windows. [0003] In addition to its dominant position in the flat panel display field, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/54
CPCH10K71/00
Inventor 邱勇段炼赵炎
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap