Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inverted blue light quantum dot film electroluminescence device

An electroluminescent device, quantum dot light emitting technology, applied in the direction of electric solid state devices, electrical components, semiconductor devices, etc., can solve the problems of large HOMO energy level, difficult hole injection, high hole injection barrier, etc.

Inactive Publication Date: 2016-08-10
SHANGHAI UNIV
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, holes in traditional quantum dot thin film electroluminescent devices (QLED) are not easy to inject, and hole injection materials with high HOMO (Highest Occupied Molecular Orbital, highest occupied molecular orbital) energy level are needed to help hole injection
Especially for blue light quantum dot thin film electroluminescent devices, the HOMO energy level of blue light quantum dots is generally large, about 6.8eV, while the work function of general transparent anodes is less than 5.0eV, the difference between the two is far, resulting in QLED The hole injection barrier in the device is generally high, and the HOMO energy level of commonly used hole injection materials is generally 5.0eV ~ 5.5eV, which cannot meet the requirements of hole injection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inverted blue light quantum dot film electroluminescence device
  • Inverted blue light quantum dot film electroluminescence device
  • Inverted blue light quantum dot film electroluminescence device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0049] In addition, the present invention also provides a method for preparing the above-mentioned inverted blue light quantum dot thin film electroluminescent device 10, such as image 3 As shown, the method includes the following steps S110-S140.

[0050] S110, providing a substrate, and forming a cathode on the substrate.

[0051] The material of the substrate can be glass, and the substrate can be ultrasonically treated with detergent, acetone, ethanol and isopropanol for 15 minutes each. Then vapor deposition, sputtering, sputtering or electrochemical vapor deposition on the substrate to form the cathode. The material of the cathode can be indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), indium-doped zinc oxide (IZO), etc., and the thickness of the cathode is 80nm-200nm.

[0052] Preferably, indium tin oxide (ITO) is sputtered onto the glass substrate by sputtering.

[0053] In this embodiment, after the cathode is formed on the ...

Embodiment 1

[0065] The structure of the inverted blue quantum dot thin film electroluminescence device is a substrate, a cathode, an electron transport layer, a blue quantum dot light-emitting layer, a hole transport layer and an anode, wherein the hole transport layer includes a first hole transport layer and a second stack stacked in sequence. Two hole transport layers. The first hole transport layer is in direct contact with the blue light quantum dot light emitting layer. Wherein, the thickness of the first hole transport layer is 8 nm, and the material of the first hole transport layer is a mixture of the first hole transport material (HTL1) and the second hole transport material (HTL2), wherein HTL1 is 6, 6-bis(4-9hydro-carbazol-9-yl)phenyl)-6hydro-pyrrole[3,2,1-de]acridine (BCPPA), HTL2 is 3,5-bis(9hydro- Carbazol-9-yl)-nitrogen, nitrogen-biphenylamine (DCDPA), the mass ratio of BCPPA to DCDPA is 1:1. The thickness of the second hole transport layer is 25nm, and the material of t...

Embodiment 2

[0071] The thickness of the first hole transport layer in the inverted blue light quantum dot thin film electroluminescence device of the present embodiment is 5nm, and the material of the first hole transport layer is the mixture that HTL1 and HTL2 form, and wherein HTL1 is BCPPA, and HTL2 is DCDPA, The mass ratio of BCPPA to DCDPA is 1:1. The thickness of the second hole transport layer is 15nm, and the material of the second hole transport layer is a mixture of HTL2 and HTL3, wherein HTL2 is DCDPA, and HTL3 is MoO 3 , DCDPA and MoO 3 The mass ratio is 1:1. All the other are identical with embodiment 1.

[0072] The specific preparation method of the inverted blue light quantum dot thin film electroluminescent device is the same as that of Example 1.

[0073] The HOMO energy level of the first hole transport layer was 6.04 eV, and the HOMO energy level of the second hole transport layer was 5.88 eV.

[0074] The luminance test was carried out on the prepared inverted blu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an inverted blue light quantum dot film electroluminescence device. The device comprises a substrate, a cathode, an electron transmission layer, a blue light quantum dot luminescence layer, a hole transmission layer and an anode which are sequentially laminated, wherein the hole transmission layer comprises a first hole transmission layer and a second hole transmission layer which are laminated, and thickness of the first hole transmission layer is 5-15nm. According to the device, the HOMO energy level of the first hole transmission layer is greater than the HOMO energy level of the second hole transmission layer, so step type barrier is formed between the blue light quantum dot luminescence layer and the anode, hole injection capability of the hole transmission layer is gradually improved, and thereby hole injection requirements of the blue light quantum dot film electroluminescence device can be satisfied.

Description

technical field [0001] The invention relates to the technical field of light-emitting devices, in particular to an electroluminescent device with an inverted blue quantum dot thin film. Background technique [0002] Quantum dots (QDs, quantum dots) are some extremely small semiconductor nanocrystals that cannot be seen by the naked eye, and the particle size is generally less than 10nm. When stimulated by light or electricity, quantum dots can emit colored light. The color of light is determined by the composition, material, size and shape of quantum dots. This feature enables quantum dots to change the color of light emitted by the light source. Because electrons, holes, and excitons are quantum-confined in the three-dimensional direction, the energy band structure of QDs changes from a bulk continuous structure to a discrete energy level structure with molecular characteristics. When the particle size of QDs is equal to or smaller than the Bohr radius of Wannier excitons ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/50
CPCH10K50/156
Inventor 曹进周洁谢婧薇魏翔俞浩健
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com