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Composite anode and manufacturing method thereof, and organic electroluminescent device and manufacturing method thereof

A composite anode, conductive metal technology, applied in the manufacturing of organic semiconductor devices, electric solid state devices, semiconductor/solid state devices, etc., can solve the problems of total reflection loss, refractive index difference, low light output performance, etc., to improve the hole injection ability , the effect of improving conductivity

Inactive Publication Date: 2014-09-17
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In traditional light-emitting devices, only about 18% of the light inside the device can be emitted to the outside, while the rest will be consumed outside the device in other forms, and there is a difference in refractive index between the interfaces (such as glass and ITO ( The difference in refractive index between indium tin oxide), the refractive index of glass is 1.5, and that of ITO is 1.8. When light reaches the glass from ITO, total reflection will occur), which causes the loss of total reflection, resulting in lower overall light extraction performance

Method used

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  • Composite anode and manufacturing method thereof, and organic electroluminescent device and manufacturing method thereof
  • Composite anode and manufacturing method thereof, and organic electroluminescent device and manufacturing method thereof

Examples

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Embodiment 1

[0057] A method for preparing a composite anode, comprising the following steps:

[0058] (1) First, the glass substrate is subjected to photolithography treatment, and then cut into 2×2cm 2 Then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface, clean and air dry;

[0059] (2) First, the doped metal oxide layer is prepared on the light-emitting surface of the glass substrate by vacuum evaporation, and the material of the doped metal oxide layer is MoO 3 and MgO in a mass ratio of 1:0.2 (expressed as MoO 3 :MgO), the thickness of the doped metal oxide layer is 10nm, and the evaporation pressure is 2×10 -4 Pa, the evaporation rate is 1nm / s; then the conductive metal single substance layer is prepared by evaporation on the doped metal oxide layer, the material of the conductive metal single substance layer is Ag, the thickness is 5nm, and the evaporation pressure is 2×10 -4 Pa, t...

Embodiment 2

[0061] A method for preparing a composite anode, comprising the following steps:

[0062] (1) First, the glass substrate is subjected to photolithography treatment, and then cut into 2×2cm 2 Then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface, clean and air dry;

[0063] (2) First, a doped metal oxide layer was prepared on the light-emitting surface of the glass substrate by vacuum evaporation, and the material of the doped metal oxide layer was WO 3 and MgO according to the mass ratio of 1:0.1 (expressed as WO 3 :MgO), the thickness of the doped metal oxide layer is 20nm, and the evaporation pressure is 3×10 -3 Pa, the evaporation rate is 6nm / s; then, the conductive metal single substance layer is prepared by evaporation on the doped metal oxide layer, the material of the conductive metal single substance layer is Al, the thickness is 20nm, and the evaporation pressure is 3×...

Embodiment 3

[0065] A method for preparing a composite anode, comprising the following steps:

[0066] (1) First, the glass substrate is subjected to photolithography treatment, and then cut into 2×2cm 2 Then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface, clean and air dry;

[0067] (2) Firstly, a doped metal oxide layer is prepared on the light-emitting surface of the glass substrate by vacuum evaporation, and the material of the doped metal oxide layer is V 2 o 5 The mixed material formed with MgO according to the mass ratio of 1:0.3 (expressed as V 2 o 5 :MgO), the thickness of the doped metal oxide layer is 2nm, and the evaporation pressure is 1×10 -3 Pa, the evaporation rate is 10nm / s; then the conductive metal single substance layer is prepared by evaporation on the doped metal oxide layer, the material of the conductive metal single substance layer is Pt, the thickness is 2nm, a...

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Abstract

The invention discloses a composite anode and manufacturing method thereof. The composite anode comprises a glass base, a doped metal oxide layer, a conductive metal simple substance layer and a p-type doped layer which are sequentially laminated, wherein the doped metal oxide layer mainly improves light emitting efficiency of the device, the conductive metal simple substance layer mainly improves conductivity of the anode, and the material of the p-type doped layer is mixed materials of a metal oxide and a phthalocyanines compound, the p-type doped layer improves conductivity and hole injection capability of the anode. The invention further discloses an organic electroluminescent device comprising the composite anode and a manufacturing method of the organic electroluminescent device, and the composite anode of the organic electroluminescent device facilitates light scattering and improves hole injection capability and light emitting efficiency.

Description

technical field [0001] The invention relates to the field of organic electroluminescence, in particular to a composite anode and a preparation method thereof, an organic electroluminescence device and a preparation method thereof. Background technique [0002] In 1987, C.W.Tang and Van Slyke of Eastman Kodak Company in the United States reported a breakthrough in the research of organic electroluminescence. A high-brightness, high-efficiency double-layer organic electroluminescent device (OLED) has been prepared using ultra-thin film technology. Brightness up to 1000cd / m at 10V 2 , its luminous efficiency is 1.51lm / W, and its lifespan is more than 100 hours. [0003] The principle of OLED light emission is based on the action of an external electric field, electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter, and holes are injected from the anode to the highest occupied orbital (HOMO) of organic matter. Electrons and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K85/311H10K50/81H10K2102/00H10K71/00
Inventor 周明杰王平黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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