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Composite material, preparation method thereof and quantum dot light-emitting diode

A quantum dot light-emitting and composite material technology, which is applied in the field of composite materials and its preparation, can solve the problems of quantum dot light-emitting diodes such as brightness, quantum efficiency and lifespan are not ideal, so as to improve hole transport ability, injection balance and performance Effect

Pending Publication Date: 2021-07-16
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a composite material and its preparation method and quantum dot light-emitting diodes, aiming to solve the problem of unsatisfactory brightness, quantum efficiency and lifespan of existing quantum dot light-emitting diodes to a certain extent

Method used

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  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode

Examples

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Effect test

Embodiment 1

[0067] First weigh 0.2g of ammonium persulfate (NH 4 ) 2 S 2 o 8 Dissolve in 50 mL distilled water to form ammonium persulfate (NH 4 ) 2 S 2 o 8 Aqueous solution, take by weighing 3g sodium dodecylbenzenesulfonate and join in 50mL distilled water to form sodium dodecylbenzenesulfonate aqueous solution; Add 100mL hydrochloric acid solution (concentration is 0.2mol / L) and 4.0mL aniline ( An) form aniline hydrochloride solution, according to ammonium persulfate and aniline molar ratio is 0.5, add sodium dodecylbenzene sulfonate aqueous solution and drip ammonium persulfate (NH 4 ) 2 S 2 o 8 Aqueous solution, the reaction temperature is controlled at 50°C; the reaction time is 8h; finally a dark green latex is formed; 20 mL of methanol is added to the dark green latex to break the emulsion, and after vacuum filtration, wash with acetone, ethanol and distilled water until the filtrate is colorless And it is neutral, and vacuum-dried at 50°C for 24 hours to obtain dark gre...

Embodiment 2

[0069] First weigh 1.6g of ammonium persulfate (NH 4 ) 2 S 2 o 8 Dissolve in 50mL distilled water to form persulfuric acid (NH 4 ) 2 S 2 o8 Aqueous solution, take by weighing 20g sodium dodecylbenzene sulfonate and join in 50mL distilled water and form sodium dodecylbenzenesulfonate aqueous solution; Add 100mL hydrochloric acid solution (concentration is 1.4mol / L) and 4.0mL aniline ( An) form aniline hydrochloride solution; According to ammonium persulfate and aniline mol ratio is 1.5, add sodium dodecylbenzenesulfonate aqueous solution and drip ammonium persulfate (NH 4 ) 2 S 2 o 8 Aqueous solution, the reaction temperature is controlled at 60°C; the reaction time is 3h, and finally a dark green latex is formed; methanol is added to the dark green latex to break the emulsion, and after vacuum filtration, wash with acetone, ethanol and distilled water until the filtrate is colorless and It is neutral, and vacuum-dried at 50°C for 24 hours to obtain dark green polyanil...

Embodiment 3

[0070] Example 3: Exchange of surface ligands

[0071] The CdZnSe / ZnS quantum dots used are synthesized in the coordination solvent oleic acid and the non-coordination solvent octadecene (ODE) system, so the surface ligands of the CdZnSe / ZnS quantum dots are oleic acid ligands. The synthesized CdZnSe / ZnS quantum dots were washed and centrifuged with a mixed solution of ethanol and n-hexane, and finally dispersed in a chloroform solution, and the concentration of CdZnSe / ZnS quantum dots was configured to be 20 mg / mL. Polyaniline was dispersed in N-methylpyrrolidone solvent, and dispersed and dissolved by an ultrasonic cleaner, and its concentration was also configured to be 20 mg / mL. After mixing the CdZnSe / ZnS quantum dot solution and the polyaniline solution uniformly at a ratio of 1:1 by volume, they were magnetically stirred at a constant temperature of 50° C. for 1 h until the ligand exchange on the surface was completed. Quantum dots with polyaniline surface ligands were...

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Abstract

The invention discloses a composite material, a preparation method thereof and a quantum dot light-emitting diode. The preparation method of the composite material comprises the steps that a quantum dot solution is provided, the surfaces of quantum dots are combined with first ligands, and the first ligands are organic ligands containing carboxyl; a ligand solution in which a second ligand is dispersed is provided, the second ligand is polyaniline, and a solvent of the ligand solution and a solvent of the quantum dot solution are mutually soluble; and the quantum dot solution is mixed with the ligand solution, and carrying out ligand exchange reaction on the surfaces of the quantum dots to obtain the composite material. The polyaniline and the quantum dots are combined together, on one hand, the hole transmission capacity of the quantum dot light-emitting layer is improved through the hole transmission capacity of the polyaniline, and injection balance of carriers is improved; and on the other hand, polyaniline serves as a surface ligand of the quantum dots, agglomeration of the quantum dots can be reduced, electron injection can be hindered, injection balance of carriers is further improved, and the device performance is improved.

Description

technical field [0001] The invention relates to the technical field of quantum dot light-emitting diodes, in particular to a composite material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] Quantum dot (quantum dot, QD) is a kind of thin nanometer material. Nanomaterials refer to materials with a size smaller than 100nm in one dimension, while quantum dots require that the size of the material be smaller than 100nm in three dimensions. Further regulations point out that the radius of the quantum dot must be smaller than the exciton Bohr radius of its counterpart material, and its size is usually around 1-10nm. Because the radius of quantum dots is smaller than the exciton Bohr radius of the corresponding bulk material, quantum dots can show obvious quantum dot confinement effect. At this time, the movement of carriers in three directions is constrained by potential barriers. This constraint is mainly It is caused by ele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02H01L51/50
CPCC09K11/883C09K11/02H10K50/115H10K50/155
Inventor 孙培川杨一行
Owner TCL CORPORATION
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