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Nano material, preparation method thereof, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode

A technology of quantum dot luminescence and nanomaterials, applied in the field of display, can solve the problems of easy agglomeration and low hole transport performance, and achieve the effects of improving performance, improving luminous efficiency, and reducing the influence of luminous efficiency.

Inactive Publication Date: 2021-06-29
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a nanomaterial and its preparation method, aiming to solve the problem that NiO nanomaterials are easy to agglomerate when forming a film, and the hole transport performance is not high

Method used

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  • Nano material, preparation method thereof, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode
  • Nano material, preparation method thereof, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode
  • Nano material, preparation method thereof, quantum dot light-emitting diode and preparation method of quantum dot light-emitting diode

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preparation example Construction

[0031] Correspondingly, combine figure 2 , The second aspect of the embodiment of the present invention provides a method for preparing a nanomaterial, comprising the following steps:

[0032] S01. dissolving nickel oxide and EDOT monomer in an organic solvent to prepare a mixed solution of nickel oxide and EDOT monomer;

[0033] S02. Adding an oxidant to the mixed solution, heating and reacting to prepare a nanomaterial coated with a PEDOT shell on the surface of the NiO nanoparticle.

[0034] The preparation method of the nanomaterial provided in the embodiment of the present invention only needs to dissolve nickel oxide and EDOT monomer in an organic solvent, and then add an oxidizing agent to react. The method is simple to operate and easy to realize large-scale preparation. More importantly, the nanomaterial prepared by the method provided in the embodiment of the present invention can improve the hole transport ability, and when used as the hole transport layer materi...

Embodiment 1

[0083] A preparation method of NiO / PEDOT core-shell nanomaterial, comprising the following steps:

[0084] Add an appropriate amount of nickel chloride to 50ml of ethanol to form a nickel salt solution with a nickel ion concentration of 0.5mol / L, stir and dissolve at a temperature of 70°C, and follow the OH - : Ni 2+ Add sodium hydroxide ethanol solution (10ml ethanol) at a molar ratio of 2:1 (pH=12). Stirred at 70°C for 4 h to obtain a homogeneous transparent solution. After the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of ethanol (repeated operation, washed 3 times), and dried to obtain NiO nanoparticles.

[0085] Add NiO nanoparticles and EDOT monomer into 30ml ethanol to form a solution with a total concentration of 0.5mol / L, in which the molar ratio of Ni:EDOT is 1:0.5. Then stir and dissolve at a temperature of 70°C, according to EDOT monomer: Fe 3+ The molar ratio is 1:1 ratio, adding ...

Embodiment 2

[0087] A preparation method of NiO / PEDOT core-shell nanomaterial, comprising the following steps:

[0088] Add an appropriate amount of nickel chloride to 50ml of methanol to form a nickel salt solution with a nickel ion concentration of 0.5mol / L, stir and dissolve at a temperature of 60°C, and - : Ni 2+ A methanol solution of sodium hydroxide (10 ml of methanol) was added at a molar ratio of 2:1 (pH=12). Stirring at 60° C. for 4 h gave a homogeneous transparent solution. After the solution was cooled, it was precipitated with ethyl acetate, and after centrifugation, it was dissolved with a small amount of ethanol (repeated operation, washed 3 times), and dried to obtain NiO nanoparticles.

[0089] Add NiO nanoparticles and EDOT monomer into 30ml methanol to form a solution with a total concentration of 0.8mol / L, in which the molar ratio of Ni:EDOT is 1:0.6. Then stir and dissolve at a temperature of 60° C., and add a methanol solution of ammonium persulfate (5 ml of methan...

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Abstract

The invention provides a nano material. The nano material is a nano material with a core-shell structure and comprises a NiO nano particle and a PEDOT shell layer which coats the surface of the NiO nano particle. According to the nano material with the core-shell structure provided by the embodiment of the invention, the surface of the NiO nano particle is coated with the PEDOT shell layer, and the PEDOT shell layer plays a role of a carrier, so that agglomeration among the NiO nano particle can be blocked, the nano particle with uniform size distribution is obtained, and the stability of the NiO / PEDOT core-shell nano material is improved. Meanwhile, the PEDOT has a lower empty orbital energy level relative to the NiO, so that after the NiO and the PEDOT are compounded, a relatively large number of electrons are transferred from the HOMO energy level of the NiO to the empty orbital of the PEDOT, thereby forming a large number of free holes and improving the hole transmission performance of the nano material.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a nanometer material and a preparation method thereof, as well as a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have a quantum size effect. People can adjust the size of quantum dots to achieve the required specific wavelength of light. For example, the luminescence wavelength of CdSe QDs can be tuned from blue light to red light. In traditional inorganic electroluminescent devices, electrons and holes are injected from the cathode and anode respectively, and then recombine in the light-emitting layer to form excitons to emit light. Conduction-band electrons in wide-bandgap semiconductors can be accelerated under high electric fields to obtain high enough energy to strike quantum dots (QDs) to make them emit light. In recent years, the use of inorganic semiconductors as electron transpor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/12C08K3/22H01L51/50H01L51/54H01L51/56B82Y30/00B82Y40/00B82Y10/00
CPCC08G61/126C08K3/22B82Y30/00B82Y40/00B82Y10/00C08K2003/2293C08K2201/011C08G2261/11C08G2261/3243H10K85/1135H10K50/155H10K71/00H10K2102/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION
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