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qled and its preparation method

A quantum dot light-emitting and electrode technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of unbalanced injection, affecting the luminous efficiency of devices, etc., and achieves improved injection, strong controllability, and improved injection. balanced effect

Active Publication Date: 2019-12-13
TCL CORPORATION
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Problems solved by technology

[0005] The purpose of the present invention is to provide a QLED and its preparation method, aiming to solve the problem that the existing QLED carrier injection imbalance affects the luminous efficiency, brightness and stability of the device

Method used

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  • qled and its preparation method
  • qled and its preparation method

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Embodiment Construction

[0020] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0021] combine Figure 1-5 , the embodiment of the present invention provides a QLED, comprising a first electrode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 5, an electron transport layer 7 and a second electrode 8 which are sequentially stacked. A first ferroelectric dipole moment material layer 4 is arranged between the hole transport layer 3 and the quantum dot light emitting layer 5; and / or

[0022] A second ferroelectric dipole moment material layer 6 is arranged between the quantum dot luminescent layer 5 and the electron transport laye...

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Abstract

The present invention provides a QLED, comprising a first electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a second electrode stacked in sequence, and the hole transport layer and the A first ferroelectric dipole moment material layer is arranged between the quantum dot light emitting layer; and / or a second ferroelectric dipole moment material layer is arranged between the quantum dot light emitting layer and the electron transport layer, wherein, The first ferroelectric dipole moment material layer and the second ferroelectric dipole moment material layer are material layers obtained by setting the dipole moment of the ferroelectric material with a preset external electric field.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a QLED and a preparation method thereof. Background technique [0002] Inorganic nanocrystalline quantum dot luminescent materials have the advantages of saturated color of emitted light and adjustable wavelength, and high photoluminescence and electroluminescence quantum yields, which are suitable for preparing high-performance display devices. In addition, from the perspective of preparation technology, quantum dot luminescent materials can be prepared into films by spin coating, printing, printing equipment and other solution processing methods under non-vacuum conditions. Therefore, quantum dot light-emitting diodes (QLEDs) prepared with quantum dot films have become a strong competitor for next-generation display technologies. [0003] Generally, a QLED device includes an anode, a hole injection and transport layer, a light emitting layer, an electron transport and injecti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/17H10K50/171H10K71/00
Inventor 陈崧钱磊曹蔚然向超宇杨一行
Owner TCL CORPORATION
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