Method of fabricating semiconductor structure

Abstract

The present disclosure provides a method of fabricating a semiconductor structure, and the method includes following steps. A gate structure is formed on a substrate, and a liner layer is formed to cover the gate structure and the substrate. A spacer layer is formed on the liner layer, and an etching gas is continuously provided to remove a portion of the spacer layer while maintaining the substrate at a second pressure, which the etching gas has a first pressure. The second pressure is greater than the first pressure.

Description

technical field [0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor structure. Background technique [0002] Semiconductor integrated circuits (integrated circuits, ICs) have experienced rapid growth. In the course of development, the functional density of semiconductor devices has increased while device feature sizes or geometries have decreased. Scaling downprocess generally provides benefits by increasing production efficiency, reducing cost, and / or improving device performance. However, such a miniaturization process also increases the complexity of the integrated circuit manufacturing process. [0003] In deep sub-micron integrated circuit technology, non-volatile memory devices have become popular storage units due to various advantages. Specifically, the data stored in the non-volatile memory device will not be lost when the power is turned off. One particular example of a non-volatile memory device includes a floating ...

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Problems solved by technology

However, this kind of miniaturization process also increases the complexity of the integrated circuit manufacturing process

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