84results about How to "Complete filling" patented technology

Devices and methods for producing purified water. The device includes a reverse osmosis subsystem, a dehumidification subsystem and a purified water storage tank fluidly coupled to the subsystems such that purified water produced by each can be locally stored. A vehicular platform, such as a ship, can be used to locate the device adjacent a supply of saline water and humid air. A saline water inlet, membrane and purified water outlet cooperate in the reverse osmosis subsystem to allow preferential passage of water relative to salt in a saline water supply, while the dehumidification subsystem includes a heat exchanger that extracts moisture from the ambient humid air. Purified water produced by each of the subsystems can be used as a potable water source. When used in conjunction with a ship, part or all of the reverse osmosis subsystem can be submersed to a depth sufficient to generate a hydrostatic pressure that is in turn sufficient to passively operate the reverse osmosis membrane such that additional pressurizing equipment, such as a pump, is not needed. Furthermore, the temperature of the water purified by the reverse osmosis subsystem may be low enough to be used as a condensing agent for the ambient humid air passing through the dehumidification subsystem.

A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and / or molecular hydrogen with highD / S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD / S ratio of, for example, 3-10.