Schottky barrier diode rectifying device and manufacture method thereof
A diode rectification and Schottky potential technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that the gap filling ability of the upper metal layer material is not good, and the surrounding area of the electric field intensity curve does not change significantly. Device reliability and other issues
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[0040] A Schottky barrier diode rectifier device, such as image 3 As shown, the active area of the device is composed of a number of Schottky barrier diode cells 1 in parallel; in cross-section, each cell 1 includes a silicon wafer 2, and a lower metal layer 3 located on the back of the silicon wafer 2, The upper metal layer 4 located on the front side of the silicon wafer 2, the first conductive type heavily doped single crystal silicon substrate 5 connected to the lower metal layer 3 at the lower part of the silicon wafer 2, and the upper part of the silicon wafer 2 The first conductivity type lightly doped monocrystalline silicon epitaxial layer 6 connected to the upper metal layer 4 is located on the upper part of the epitaxial layer 6 and opens to the trench 7 on the upper surface of the epitaxial layer 6, adjacent to the trench 7 The boss 8 formed in the region of the epitaxial layer 6 between, the first conductive polysilicon region 9 heavily doped wi...
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