Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film

A gallium oxide and epitaxial film technology, applied in the field of semiconductor material preparation, can solve the problems of carbon and organic compound pollution, and achieve the effect of avoiding pollution and excellent performance

Active Publication Date: 2014-01-01
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing gallium oxide epitaxial film in order

Method used

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  • Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film
  • Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film
  • Method for preparing gallium oxide epitaxial film and gallium oxide epitaxial film

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Embodiment 1

[0060] The MOCVD system used in the preparation method of a gallium oxide epitaxial film in the present invention refers to figure 1 , the MOCVD system includes: a source supply unit, a gas transport unit, a mass flow control unit, a reaction chamber 1, and a tail gas treatment unit; the source supply unit reaches the reaction chamber 1 through the gas transport unit under the control of the mass flow control unit , the reacted gas enters the tail gas treatment unit; the reaction chamber 1 is provided with a rotatable tray 2, and the reaction chamber is respectively connected with the mechanical pump 3 and the molecular pump 4 through pipelines.

[0061] This embodiment specifically includes the following steps:

[0062] Step 1: Select the single-crystal gallium oxide with (400) crystal plane as the substrate, and clean it for later use.

[0063] Step 2: Operate the MOCVD equipment, send the substrate into the sample pretreatment chamber, and use the mechanical pump 3 to roug...

Embodiment 2

[0074] The invention provides a method for preparing a gallium oxide epitaxial film, which specifically comprises the following steps:

[0075] Step 1: The substrate is a single crystal sapphire with (0006) crystal plane, cleaned and ready for use.

[0076] Step 2: Operate the MOCVD equipment, send the substrate into the sample pretreatment chamber, and use the mechanical pump 3 to roughly evacuate the reaction chamber 1 .

[0077] Step 3: Start the turbomolecular pump 4 when the vacuum degree of the reaction chamber 1 reaches 2 Pa, and pump the vacuum degree of the back of the reaction chamber 1 to 4×10 -4 Below Pa, the substrate is then sent from the pretreatment chamber into the reaction chamber 1, and the tray 2 on which the substrate is placed is started to be heated. After the temperature is raised to 750° C., the substrate is heat-treated for 30 minutes.

[0078] Step 4: After the pretreatment is completed, lower the temperature of the tray 2 to the growth temperature ...

Embodiment 3

[0087] The invention provides a method for preparing a gallium oxide epitaxial film, which specifically comprises the following steps:

[0088] Step 1: The substrate is a single crystal sapphire with (0006) crystal plane, cleaned and ready for use.

[0089] Step 2: Operate the MOCVD equipment, send the substrate into the sample pretreatment chamber, and use the mechanical pump 3 to roughly evacuate the reaction chamber 1 .

[0090] Step 3: Start the turbomolecular pump 4 when the vacuum degree of the reaction chamber 1 reaches 3Pa, and pump the vacuum degree of the back of the reaction chamber 1 to 5×10 -4 Below Pa, the substrate is then sent from the pretreatment chamber into the reaction chamber 1, and the tray 2 on which the substrate is placed is started to be heated. After the temperature is raised to 1100°C, the substrate is heat-treated for 20 minutes.

[0091] Step 4: After the pretreatment is completed, lower the temperature of the tray 2 to the growth temperature of...

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Abstract

The invention relates to the field of semiconductor material preparation, and discloses a method for preparing a gallium oxide epitaxial film and the gallium oxide epitaxial film. Trimethyl gallium or triethyl gallium is used as a gallium source, gas state oxygen-containing substances are used as an oxygen source, a hydrogenous compound is used as auxiliary reaction gas, and then the gallium oxide epitaxial film is prepared. According to the method for preparing the gallium oxide epitaxial film and the gallium oxide epitaxial film, an MOCVD system is used, and the gallium oxide epitaxial film is prepared by adjusting growth parameters, adding auxiliary reactants and optimizing a subsequent processing method. By the adoption of the method, an organic source can be fully reacted, reaction products can be completely separated, and pollution on the surface of the gallium oxide film caused by secondary deposition of carbon and the relevant compounds of carbon is avoided. The gallium oxide epitaxial film prepared from the method is good in performance and meets the requirement for industrialization mass production in the future.

Description

technical field [0001] The invention relates to the field of semiconductor material preparation, in particular to a preparation method of a gallium oxide epitaxial film and the gallium oxide epitaxial film. Background technique [0002] Ga 2 o 3 Due to its excellent photoelectric properties and its potential application in the field of semiconductor optoelectronic devices, it has attracted more and more attention. Ga 2 o 3 The material has five isomers: α, β, γ, δ, ε, the most stable of which is the β isomer, when heated above 1000°C or heated above 300°C under hydrothermal conditions (ie wet method) , all other isomers are converted to the beta isomer. Beta-Gallium Oxide (Ga 2 o 3 ) is a wide bandgap transparent oxide semiconductor material (Eg=4.9eV). β-Ga2O3 single crystal has a certain electrical conductivity, is not easy to be chemically corroded, and has high mechanical strength, stable performance at high temperature, high transparency of visible light and ult...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L21/20
CPCH01L21/02565H01L21/0262
Inventor 陈远鹏夏晓川柳阳申人升梁红伟杜国同
Owner DALIAN UNIV OF TECH
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