Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof

A technology of nitride semiconductor and nitride film, which is applied in semiconductor/solid-state device manufacturing, crystal growth, single crystal growth, etc., and can solve problems such as inapplicability

Inactive Publication Date: 2005-11-30
SAMSUNG CORNING PRECISION MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not suitable for forming thick films of 30 μm or more, which are used as independent substrates

Method used

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  • Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof
  • Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof
  • Non-polar single crystalline A-plane nitride semiconductor wafer and preparation thereof

Examples

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example 1

[0037] In the HVPE reactor, a single-crystal r-plane sapphire substrate with a diameter of 50.8 mm was placed, and nitriding was performed at 950 to 1100° C. with gaseous ammonia, a gas mixture of ammonia and hydrogen chloride, and gaseous ammonia in sequence.

[0038] On the nitride substrate thus obtained, a gallium nitride single crystal film was allowed to grow at a rate of 75 µm / hr by bringing gaseous gallium chloride and gaseous ammonia into contact therewith at 1000°C. Gallium chloride gas and gaseous ammonia, produced by the reaction of gallium with hydrogen chloride, are introduced through two separate inlets at a volume ratio of gaseous hydrogen chloride: gaseous ammonia of 1:6. The reactor chamber is maintained at a temperature in the range of 600 to 900°C at ambient pressure. Growth of the gallium nitride single crystal film was performed for 400 minutes to form a 500 μm thick gallium nitride semiconductor film on the substrate.

[0039] Figure 4 and 5 A photog...

example 2

[0043] Except that the volume ratio of gaseous hydrogen chloride and gaseous ammonia is in the range of 1:2-5, the steps of Example 1 are repeated to form a 500 μm thick gallium nitride semiconductor film on a sapphire substrate.

[0044] Figure 8A and 8B SEM photographs and XRD vibration curves of the surface of the thus formed a-plane GaN thick film are shown respectively. Figure 8B The XRD vibrational curve of the a-plane nitride film has a FWHM value of 342 arc seconds, which is the smallest value among the FWHM values ​​reported so far, which indicates that the crystallinity of the film is significantly improved.

[0045] As described above, according to the method of the present invention, a high-quality nonpolar single-crystal a-face nitride semiconductor wafer without voids, warpage, or cracks can be produced quickly and efficiently, and it can be advantageously used for LED manufacturing in the substrate.

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Abstract

A single crystalline a-plane nitride semiconductor wafer having no voids, bending or cracks can be rapidly and effectively prepared by hydride vapor phase epitaxy (HVPE) growth of the a-plane nitride semiconductor film on a single crystalline r-plane sapphire substrate at a temperature ranging from 950 to 1,100 DEG C and at a rate ranging from 30 to 300 mu m / hr.

Description

technical field [0001] The invention relates to a non-polar single crystal a-plane nitride semiconductor wafer without voids, warpage or cracks and a method for preparing the nitride semiconductor wafer. Background technique [0002] Single-crystal nitride-based wafers used as substrates in the manufacture of semiconductor devices are mainly c-plane ({0001} plane) thin films grown on c-plane sapphire substrates by conventional methods and then separated from them. Methods such as Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) and Hydride Vapor Phase Epitaxy (HVPE). [0003] However, such a c-plane nitride film grown on a c-plane sapphire substrate is prone to cracks due to differences in lattice parameters and thermal expansion coefficients at the interface during growth. In the case where the c-plane nitride film is doped with an element such as silicon, this crack problem is even more serious. Also, c-plane nitride films, such as GaN / AlGaN ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C23C16/34C30B25/02C30B25/18C30B29/40H01L21/205
CPCC30B25/18C30B29/403C30B25/02H01R13/4532
Inventor 申铉敏李惠龙李昌浩金贤锡金政敦孔善焕
Owner SAMSUNG CORNING PRECISION MATERIALS CO LTD
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