Growth method of compound semiconductor epitaxial layer on silicon substrate and device structure with epitaxial layer

Abstract

The invention discloses a growth method of a compound semiconductor epitaxial layer on a silicon substrate and a device structure with the epitaxial layer. The method comprises the steps of providing a single-crystal silicon substrate, carrying out surface processing on the single-crystal silicon substrate, depositing an AlN layer step by step through a radio frequency magnetron sputtering deposition method on the single-crystal silicon substrate, and depositing an AlN layer, or a GaN layer or an AlGaN layer on the AlN layer through an organometallic chemistry vapor deposition method or a hydride vapor phase epitaxy method. The AlN layer comprises an AlN nucleating layer used for controlling AlN crystal orientation and an AlN buffering layer used for controlling AlN crystal stress, and the AlN buffering layer is thicker than the AlN nucleating layer. The method effectively avoids the cracking and dislocation phenomenon caused by thermal mismatching and lattice mismatching, improves the crystal quality of the epitaxial layer, and enhances device performance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a compound semiconductor epitaxial layer on a silicon substrate and a device structure thereof. Background technique [0002] Gallium nitride is considered to be the most important semiconductor material after silicon. GaN is a wide bandgap semiconductor material, its spectrum covers the entire visible light region, it can be made into blue and white light-emitting diodes for display, TV backlight and general lighting; it can be made into green / blue light-emitting diodes, Together with AlGaInP-based red light-emitting diodes, it is used for full-color display; it can also be made into ultraviolet lasers for data storage. In addition to excellent optical properties, electrical properties of gallium nitride are also excellent: high electron mobility (about 2000cm 2 / Vs), high electron velocity (2.5*10 7 cm / s), high critical electric field (3.5*10 6 V...

AI Technical Summary

Problems solved by technology

Parameters such as crystal quality and component uniformity of each layer can only be known after the entire process is completed, so the metal-organic chemical vapor deposition method is complex and poorly controllable

Adding an aluminum nitride buffer layer to the production process of the epitaxial layer of semiconductor light-emitting diodes by metal-organic chemical vapor deposition method increases the difficulty of the process, easily brings cross-contamination between layers, and also significantly increases the manufacturing cost.

[0007] Although aluminum nitride can be deposited by other simple, low-cost methods, the crystal quality of aluminum nitride produced by such methods is inferior to that of aluminum nitride produced by metal organic chemical vapor deposition

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