Multiple precursor concentric delivery showerhead

a showerhead and precursor technology, applied in the direction of chemically reactive gases, crystal growth processes, coatings, etc., can solve the break-down of precursor materials, and special problems of precursor material deposition on the hot surfa

Inactive Publication Date: 2011-10-20
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0010]The present invention generally provides improved methods and appa...

Problems solved by technology

Interaction of the precursor gases with the hot hardware components, which are often found in the processing zone of an LED or LD forming reactor, generally causes the precursor to break-down and dep...

Method used

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  • Multiple precursor concentric delivery showerhead
  • Multiple precursor concentric delivery showerhead
  • Multiple precursor concentric delivery showerhead

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Embodiment Construction

[0021]Embodiments of the present invention generally provide a method and apparatus that may be utilized for deposition of Group III-nitride films using MOCVD and / or HVPE hardware. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a cooling channel through which the plurality of concentric tube assemblies is disposed.

[0022]FIG. 1 is a schematic plan view illustrating one embodiment of a processing system 100 that comprises the one or more MOCVD chambers 102 for fabricating compound nitrid...

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Abstract

A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a heat exchanging channel through which the plurality of concentric tube assemblies is disposed.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims benefit of U.S. Provisional Patent Application Ser. No. 61 / 324,271 (APPM / 015324L), filed Apr. 14, 2010, which is herein incorporated by reference.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a showerhead design for use in metal organic chemical vapor deposition (MOCVD) and / or hydride vapor phase epitaxy (HVPE).[0004]2. Description of the Related Art[0005]Group III-V films are finding greater importance in the development and fabrication of a variety of semiconductor devices, such as short wavelength light emitting diodes (LEDs), laser diodes (LDs), and electronic devices including high power, high frequency, high temperature transistors and integrated circuits. For example, short wavelength (e.g., blue / green to ultraviolet) LEDs are fabricated u...

Claims

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Application Information

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IPC IPC(8): H01L21/20C23C16/00
CPCC23C16/45519C23C16/45565B05B1/18C30B25/14H01L21/67115C23C16/52
Inventor TAM, ALEXANDERCHANG, ANZHONGACHARYA, SUMEDH
Owner APPLIED MATERIALS INC
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