Method for manufacturing metal grid-graphene transparent electrode and method for manufacturing touch screen from metal grid-graphene transparent electrode

A technology of metal grids and manufacturing methods, which is applied in the direction of cable/conductor manufacturing, circuits, electrical components, etc., can solve problems such as difficult application, influence on photoelectric performance, and easy disconnection, etc., achieve excellent photoelectric performance and flexibility, and improve photoelectric performance. The effect of performance and low cost

Inactive Publication Date: 2013-08-07
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Transparent conductive film materials and devices are widely used in military, aerospace, industrial, civil and many other optoelectronic system equipment. At present, indium tin oxide (ITO) transparent electrodes are widely used because of their good optoelectronic properties, but with the modern optoelectronic With the continuous development of devices and the extensive use of transparent electrodes, more and more problems have been exposed to traditional ITO transparent electrodes: (1) The chemical and thermal properties of ITO are unstable; (2) In is a rare metal and is toxic;

Method used

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  • Method for manufacturing metal grid-graphene transparent electrode and method for manufacturing touch screen from metal grid-graphene transparent electrode
  • Method for manufacturing metal grid-graphene transparent electrode and method for manufacturing touch screen from metal grid-graphene transparent electrode
  • Method for manufacturing metal grid-graphene transparent electrode and method for manufacturing touch screen from metal grid-graphene transparent electrode

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Experimental program
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Effect test

Embodiment 1

[0037] The metal material of the metal grid is Cu, the metal line width is 500um, the metal line width is 50nm, the metal thickness is 100nm, and the metal duty cycle is 19%. The periodic metal grid was prepared by photolithography, the exposure time was 1 s, and the developing time was 10 s. The material of the transparent insulating flexible substrate is PET, the square resistance is 5Ω / sq, the light transmittance is 80%, and the square resistance has no effect when the bending radius is 4mm.

[0038] Large-area graphene growth by CVD method: Graphene growth is carried out in a large-diameter tube furnace under the conditions of copper foil as a substrate and the presence of a catalyst, a gas carbon source, and a protective gas. The growth temperature is 100°C, and the growth is 1 min. The graphene grown on the copper foil is transferred to the metal grid to form a flexible metal grid-graphene transparent electrode.

Embodiment 2

[0040] The metal material of the metal grid is Ag, the metal line width is 1000um, the metal line width is 40nm, the metal thickness is 10nm, and the metal duty cycle is 10%. The periodic metal grid was prepared by photolithography, the exposure time was 600s, and the developing time was 600s. The material of the transparent insulating flexible substrate is PET, the sheet resistance is 1000Ω / sq, the light transmittance reaches 97%, and the sheet resistance has no effect when the bending radius is 1mm.

[0041] Large-area graphene growth by CVD method: Graphene growth is carried out in a large-diameter tube furnace under the conditions of copper foil as a substrate and the presence of a catalyst, a gas carbon source, and a protective gas. The growth temperature is 1100°C, and the growth is 60 minutes. The graphene grown on the copper foil is transferred to the metal grid to form a flexible metal grid-graphene transparent electrode.

Embodiment 3

[0043]The metal material of the metal grid is Au, the metal line width is 500um, the metal line width is 4um, the metal thickness is 100nm, and the metal duty cycle is 10%. The periodic metal grid was prepared by photolithography, the exposure time was 3 min, and the developing time was 60 s. The material of the transparent insulating flexible substrate is PET, the sheet resistance is 100Ω / sq, the light transmittance is 90%, and the sheet resistance has no effect when the bending radius is 4mm.

[0044] Large-area graphene growth by CVD method: Graphene growth is carried out in a large-diameter tube furnace under the conditions of copper foil as a substrate and the presence of a catalyst, a gas carbon source, and a protective gas. The growth temperature is 500°C, and the growth is 20 minutes. The graphene grown on the copper foil is transferred to the metal grid to form a flexible metal grid-graphene transparent electrode.

[0045] Some experimental results of the photoelectr...

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Abstract

Disclosed are a method for manufacturing a metal grid-graphene transparent electrode and a method for manufacturing a touch screen from the metal grid-graphene transparent electrode. The method for manufacturing the metal grid-graphene transparent electrode and the method for manufacturing the touch screen have the advantages that merits of graphene and merits of a metal grid structural material are combined with one another, defects of the graphene can be effectively overcome by means of adjusting sizes of metal grids, accordingly, the photoelectric property of the metal grid-graphene transparent electrode is effectively improved, a flexible continuous transparent conductive film can be formed by means of shifting a graphene film on the metal grids, and the manufactured metal grid-graphene transparent electrode and the manufactured touch screen are non-toxic and environment-friendly and are excellent in photoelectric property and flexibility.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to a method for manufacturing a transparent electrode and a method for manufacturing a touch screen. Background technique [0002] Transparent conductive film materials and devices are widely used in military, aerospace, industrial, civil and many other optoelectronic system equipment. At present, indium tin oxide (ITO) transparent electrodes are widely used because of their good optoelectronic properties, but with the modern optoelectronic With the continuous development of devices and the extensive use of transparent electrodes, more and more problems have been exposed to traditional ITO transparent electrodes: (1) The chemical and thermal properties of ITO are unstable; (2) In is a rare metal and is toxic; (3) The ITO film has ceramic properties. Therefore, it is urgent to find a new type of electrode with high transmittance, low resistance, and can be prepared at room temperat...

Claims

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Application Information

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IPC IPC(8): H01B13/00G06F3/041G06F17/50
Inventor 史浩飞刘海燕李占成张为国汤林龙周秀丽杜春雷
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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