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Epitaxial growth method and structure for preventing electronic leakage and defect extension

A technology of electron leakage and epitaxial growth, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of insufficient light efficiency, electron leakage, etc. Effect

Active Publication Date: 2014-02-05
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0009] The purpose of the present invention is to provide an epitaxial growth method and its structure that prevent electron leakage and defect extension, so as to solve technical problems such as electron leakage, defect upward extension, and insufficient light efficiency.

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  • Epitaxial growth method and structure for preventing electronic leakage and defect extension
  • Epitaxial growth method and structure for preventing electronic leakage and defect extension
  • Epitaxial growth method and structure for preventing electronic leakage and defect extension

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Embodiment 1

[0077] The invention uses Veeco K465i MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As N source, trimethylgallium (TMGa) and triethylgallium (TEGa) as gallium source, trimethylindium (TMIn) as indium source, silane (SiH4) as N-type dopant, trimethylaluminum ( TMAl) as the aluminum source, magnesocene (CP2Mg) as the P-type dopant, the substrate is (0001) plane sapphire, and the reaction chamber pressure is between 100torr and 600torr. The specific growth method is as follows (for the epitaxial structure, see figure 2 , please refer to the energy band of the electron blocking layer in step 5 Figure 4 ):

[0078] 1. Under the hydrogen atmosphere of 1000-1100℃, the pressure of the reaction chamber is controlled at 200-500torr, and the sapphire substrate is treated at high temperature for 5-6min; then the temperature is lowered ...

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Abstract

The invention provides an epitaxial growth method for preventing electronic leakage and defect extension. An electronic barrier layer with a thickness of 8-25nm is grown between a grown multiple quantum well InxGa[1-x]N layer and a grown P type GaN layer through NH3, TMGa and TMA1. The electronic barrier layer comprises 2-6 groups of double-layer structures, and the content of Al of a UAlGaN layer of each double-layer structure is 15%-50% less than that of a UAlGaN layer of the previous double-layer structure. According to the epitaxial growth method and structure for preventing electronic leakage and defect extension, the UAlGaN / UGaN structure with Al content reduced layer by layer is adopted to serve as the electronic barrier layer, single energy level height distribution of a traditional P-spacer energy band is changed, the resisting effect on hole injection is weakened, and light emitting efficiency of an MQW is improved.

Description

technical field [0001] The invention relates to the technical field of LED epitaxial design, in particular to an epitaxial growth method and structure for blocking electron leakage and defect extension. Background technique [0002] GaN-based light-emitting diodes (LEDs) have been widely used in traffic lights, outdoor full-color displays, urban landscape lighting, automotive interior and exterior lights, and tunnel lights. Large-size high-power chip specifications such as 30mil*30mil, 45mil*45mil, 50mil*50mil, etc. are mostly used for lighting. The key technology of large-size chips no longer defines the luminous performance of large-size chips by high lumens, but uses lumens / watt (ie, light efficiency) as an important indicator to measure high-power light-emitting devices. [0003] At present, most innovations to improve large-scale light efficiency lie in the improvement of the quantum well layer and the P-type layer, such as reducing the energy band distortion of the qu...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/00
CPCC30B25/16C30B29/403H01L33/0075H01L33/06H01L33/145
Inventor 牛凤娟从颖戚运东
Owner XIANGNENG HUALEI OPTOELECTRONICS
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