Method for preparing high-quality perovskite thin film by introducing cheap additive

An additive preparation, high-quality technology, used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as limiting the development of perovskite cells, diversity affecting quality, and destroying device stability. Application prospect, improvement of film morphology, and effect of improving optoelectronic properties

Active Publication Date: 2017-03-08
UNIV OF SCI & TECH BEIJING
View PDF2 Cites 29 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the diversity of the preparation environment of the solution method affects the quality of the prepared materials, restricts the further application of the materials, seriously damages the stability of the device, and limits the development of perovskite batteries.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-quality perovskite thin film by introducing cheap additive
  • Method for preparing high-quality perovskite thin film by introducing cheap additive
  • Method for preparing high-quality perovskite thin film by introducing cheap additive

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0053] Example 1: Introducing cheap NH 4 I Preparation of high-quality perovskite thin films

[0054] The substrate (FTO / ITO) was cleaned, and ethanol, acetone, and isopropanol were alternately ultrasonicated for 15 minutes, and dried with nitrogen gas for later use. The cleaned substrate was etched by oxygen plasma for 15 minutes. Configure perovskite precursor solution, mix 1:1 CH 3 NH 3 I(MAI) and PbI 2 Dissolve in a mixed solvent of dimethyl sulfoxide and dimethylformamide, add 1% NH 4 I get the precursor solution. The precursor solution is spin-coated onto the treated substrate in one step, the spin-coating speed is 2000 rpm, and the operation is performed under the condition that the humidity is lower than 30%. The preparation method of the perovskite thin film without ammonium salt additive is the same as above. Spin-coat the hole-transport material and evaporate the gold electrode. test.

[0055] Compare the X-ray diffraction patterns of perovskite before and ...

example 2

[0058] Example 2: Introducing cheap NH 4 Preparation of high-quality perovskite thin films by Cl

[0059] The substrate (FTO / ITO) was cleaned, and ethanol, acetone, and isopropanol were alternately ultrasonicated for 15 minutes, and dried with nitrogen gas for later use. The cleaned substrate was etched by oxygen plasma for 15 minutes. To configure the perovskite precursor solution, mix 1:1 NH 2 -CH=NH 2 I(FAI) and PbI 2 Dissolve in a mixed solvent of dimethyl sulfoxide and dimethylformamide, add 15% NH 4 Cl to obtain the precursor solution. The precursor solution is spin-coated onto the treated substrate in one step, the spin-coating speed is 2000 rpm, and the operation is performed under the condition that the humidity is lower than 30%. The preparation method of the perovskite thin film without ammonium salt additive is the same as above. Spin-coat the hole-transport material and evaporate the gold electrode. test.

[0060] Comparing the performance diagram of pero...

example 3

[0061] Example 3: Introducing cheap NH 4 Preparation of high-quality perovskite thin films by Br

[0062] The substrate (FTO / ITO) was cleaned, and ethanol, acetone, and isopropanol were alternately ultrasonicated for 15 minutes, and dried with nitrogen gas for later use. The cleaned substrate was etched by oxygen plasma for 15 minutes. Configure perovskite precursor solution, mix 1:1 CH 3 NH 3 Cl and PbI 2 Dissolve in a mixed solvent of dimethyl sulfoxide and dimethylformamide, add 5% NH 4 Br to get the precursor solution. The precursor solution is spin-coated onto the treated substrate in one step, the spin-coating speed is 2000 rpm, and the operation is performed under the condition that the humidity is lower than 30%. The preparation method of the perovskite thin film without ammonium salt additive is the same as above. Spin-coat the hole-transport material and evaporate the gold electrode. test.

[0063] Comparing the performance diagram of perovskite battery befo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method for preparing a high-quality perovskite thin film by introducing a cheap additive. An ammonium salt additive is introduced into a high-quality perovskite material during the preparation process, the additive can be introduced into a perovskite precursor solution or an anti-solvent, the structural formula of the perovskite material is AMX3, A is an organic cation, CH<3>NH<3> and NH<2>-CH are a mixture of one or two of NH<2>, CH<3>CH<2>NH<3>, CH<3>(CH<2>)NH<3> and CH<3>(CH<2>)<3>NH<3>, M is a mixture of one or two of Pb<2><+> or Sn<2><+>, and X is a mixture of one or two of Cl, Br, I or SCN. With the introduction of the ammonium salt, the internal defect of the thin film is reduced, a surface state is reduced, and a new preparation path is provided. The method has the advantages of process simplicity, low cost and high repeatability, is beneficial for improving the optical and electrical properties of the perovskite thin film and has a good application prospect.

Description

technical field [0001] The invention belongs to the field of nano functional material photovoltaic solar energy materials, relates to the preparation of high-quality perovskite materials, in particular to a method for preparing high-quality perovskite thin films by introducing cheap additives. Background technique [0002] The development of human society so far still mainly depends on fossil energy. However, the distribution of fossil energy on the earth is extremely uneven, and the reserves are limited. It is difficult for fossil energy to meet the needs of human beings. In addition, the burning of fossil energy has brought huge environmental pollution, smog weather and greenhouse effect, and these negative effects seriously threaten the sustainable development of human society. Solar cells can directly convert solar energy into electrical energy, and can provide inexhaustible clean energy for the development of human society. It is an important countermeasure for human s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/46H01L51/48
CPCH10K71/12H10K85/30Y02E10/549H10K85/50
Inventor 张跃司浩楠康卓廖庆亮
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap