Quantum dot light emitting layer and preparation method and application thereof

A quantum dot luminescence and quantum dot technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc. and unsatisfactory stability, to achieve stable luminous performance, low cost, and stable structural quality

Active Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the disadvantages of the prior art, to provide a quantum dot luminescent layer and its preparation method, to solve the problem that the film quality of the existing quantum dot luminescent layer has been damaged during the preparation process, resulting in quantum Poor quality of dot luminous lay...

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  • Quantum dot light emitting layer and preparation method and application thereof
  • Quantum dot light emitting layer and preparation method and application thereof
  • Quantum dot light emitting layer and preparation method and application thereof

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preparation example Construction

[0038] On the basis of the quantum dot light-emitting layer described above, the embodiment of the present invention also provides a preparation method of the quantum dot light-emitting layer. The technological process of the preparation method of the quantum dot luminescent layer is as follows: Figure 4 As shown, it includes the following steps:

[0039] S01: Provide a quantum dot prefabricated film with organic ligands bound to the surface of the quantum dot;

[0040] S02: Perform cross-linking treatment on the quantum dot prefabricated film.

[0041] Specifically, the quantum dot prefabricated film in the step S01 is prepared and obtained according to the following two methods:

[0042] In the first method, the quantum dots bound with the initial ligand are first mixed with the organic ligand solution for ligand replacement, so that the quantum dots bind the organic ligands, and then the quantum dots bound with the organic ligands The quantum dot prefabricated film is fir...

Embodiment 1

[0081] This embodiment provides a quantum dot light-emitting diode and a preparation method thereof. The structure of the quantum dot light emitting diode is: ITO glass / PEDOT / TFB / CdSe quantum dot light emitting layer / ZnO / Al. The CdSe quantum dot is combined with a 3,5-octadiyn-1-hydroxyl-8-thiol ligand, and the ligand is cross-linked.

[0082] The quantum dot light-emitting diode of this embodiment is prepared according to the following method:

[0083] S11. Add 3,5-octadiyne-1-hydroxyl-8-thiol to the CdSe quantum dot solution for ligand exchange to obtain 3,5-octadiynyl-1-hydroxyl-8-thiol bound to the surface The CdSe quantum dot solution, after cleaning, drying and other post-treatments, obtains CdSe quantum dots with 3,5-octadiyne-1-hydroxyl-8-thiol on the surface, and then disperses them in chloroform to prepare quantum dots solution;

[0084] S12. Printing the PEDOT hole injection layer and the TFB hole transport layer sequentially on the ITO anode;

[0085] S13. Prin...

Embodiment 2

[0088]This embodiment provides a quantum dot light-emitting diode and a preparation method thereof. The structure of the quantum dot light emitting diode is: ITO glass / PEDOT / TFB / CdSe quantum dot light emitting layer / ZnO / Al. The CdSe quantum dots are combined with mercaptobenzoic acid ligands, and the ligands are cross-linked.

[0089] The quantum dot light-emitting diode of this embodiment is prepared according to the following method:

[0090] S11. Dispersing CdSe quantum dots in chloroform to prepare a quantum dot solution;

[0091] S12. Depositing a stacked PEDOT hole injection layer and a TFB hole transport layer on the ITO anode;

[0092] S13. Deposit the above-mentioned quantum dot solution on the TFB hole transport layer to form a CdSe quantum dot film; deposit the mercaptobenzoic acid solution on the above-mentioned quantum dot film, and perform ligand exchange to obtain CdSe quantum dots with mercaptobenzoic acid bound to the surface Prefabricated film; then using ...

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Abstract

The invention discloses a quantum dot light emitting layer and a preparation method and an application thereof. The quantum dot light emitting layer includes quantum dots, and the quantum dots are combined with organic ligands. The organic ligands include at least one of X1-R1-C-triple-bond-C-C-triple-bond-C-R2, X2-M-R3 and X3-R4-CH2-CH2-R5, the X1, X2 and X3 are bound to the surface of the quantum dots, and at least the organic ligands on the surface of the quantum dot light emitting layer are cross-linked by at least one of the groups - C-triple-bond-C-C-triple-bond-C-,-M- and -CH2-CH2- contained in the organic ligands, wherein the X1, X2 and X3 are groups bound to the surface of the quantum dots, the R1, R2, R3, R4 and R5 are independently selected from alkyl or alkyl derivative with conjugated or non-conjugated groups, and M is aryl. The quantum dot light emitting layer of the invention has stable structure quality and stable light emitting performance.

Description

technical field [0001] The invention belongs to the technical field of electroluminescent devices, and in particular relates to a quantum dot luminescent layer and a preparation method and application thereof. Background technique [0002] As a new type of display technology, electroluminescent devices have self-illumination, wide viewing angle, low energy consumption, high efficiency, thinness, rich colors, fast response, wide applicable temperature range, low driving voltage, flexible, bendable and transparent Unique advantages such as unique display panels and environmental friendliness, therefore, electroluminescent device technology can be applied to flat panel displays and new-generation lighting, and can also be used as a backlight source for LCDs. [0003] An electroluminescent device is a device prepared by placing a light-emitting material between two metal electrodes. A classic three-layer electroluminescent device includes a hole transport layer, a light-emitting...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 曹蔚然梁柱荣杨一行向超宇钱磊
Owner TCL CORPORATION
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