High-light-output bismuth silicate scintillation crystal and preparation method thereof

A technology of scintillation crystals and bismuth silicate, which is applied in the field of materials science, can solve problems such as poor light output effects, achieve the effects of improving growth efficiency and application, increasing light output, and reducing segregation of melt components

Active Publication Date: 2017-07-14
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned problems existing in the prior art, the present invention provides a bismuth silicate scintillation crystal with high light output and a preparation method thereof. The bismuth silicate scintillation crystal with high light output and its preparation method should solve the problem Technical issues with poor light output of bismuth silicate scintillation crystals

Method used

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  • High-light-output bismuth silicate scintillation crystal and preparation method thereof
  • High-light-output bismuth silicate scintillation crystal and preparation method thereof
  • High-light-output bismuth silicate scintillation crystal and preparation method thereof

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Effect test

Embodiment 1

[0029] Bi with a purity of not less than 99.99% 2 o 3 Powder, SiO 2 Powder and Ta 2 o 5 Dry the powder in a drying oven for 3 hours, and then accurately weigh Bi according to the molar ratio of 2:3 2 0 3 and SiO 2 , mixed, compacted, and then sintered at 850 ° C for 8 hours; the sintered material was cooled and then ground and then mixed with Ta 2 o 5 Powder (Ta 5+ The doping amount is 0.2mol%), mixed evenly again, compacted, and sintered at 900°C for 10 hours to obtain bismuth silicate polycrystalline material;

[0030] Take a BSO single crystal with a crystal orientation of and a size of Φ10×50mm as a seed crystal, put the bismuth silicate polycrystalline material and the seed crystal into a platinum crucible, and then use the vertical solidification method for crystal growth: first use 14 hours to Furnace growth at 1130°C, and then keep it warm for 10 hours, then gradually lift the downcomer. After the polycrystalline material in the crucible is completely melted,...

Embodiment 2

[0033] Bi with a purity of not less than 99.99% 2 o 3 Powder, SiO 2 Powder and Ta 2 o 5 Dry the powder in a drying oven for 3 hours, and then accurately weigh Bi according to the molar ratio of 2:3 2 0 3and SiO 2 , mixed, compacted, and then sintered at 850 ° C for 8 hours; the sintered material was cooled and then ground and then mixed with Ta 2 o 5 Powder (Ta 5+ The doping amount is 1mol%), mixed evenly again, compacted, and sintered at 900°C for 10 hours to obtain bismuth silicate polycrystalline material;

[0034] Take a BSO single crystal with a crystal orientation of and a size of Φ10×50mm as a seed crystal, put the bismuth silicate polycrystalline material and the seed crystal into a platinum crucible, and then use the vertical solidification method for crystal growth: first use 14 hours to Furnace growth at 1130°C, and then keep it warm for 10 hours, then gradually lift the downcomer. After the polycrystalline material in the crucible is completely melted, lo...

Embodiment 3

[0037] Bi with a purity of not less than 99.99% 2 o 3 Powder, SiO 2 Powder and Ta 2 o 5 Dry the powder in a drying oven for 3 hours, and then accurately weigh Bi according to the molar ratio of 2:3 2 0 3 and SiO 2 , mixed, compacted, and then sintered at 850 ° C for 8 hours; the sintered material was cooled and then ground and then mixed with Ta 2 o 5 Powder (Ta 5+ The doping amount is 2mol%), mixed evenly again, compacted, and sintered at 900°C for 10 hours to obtain bismuth silicate polycrystalline material;

[0038] Take a BSO single crystal with a crystal orientation of and a size of Φ10×50mm as a seed crystal, put the bismuth silicate polycrystalline material and the seed crystal into a platinum crucible, and then use the vertical solidification method for crystal growth: first use 14 hours to Furnace growth at 1130°C, and then keep it warm for 10 hours, then gradually lift the downcomer. After the polycrystalline material in the crucible is completely melted, l...

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Abstract

The invention provides a high-light-output bismuth silicate scintillation crystal. A bismuth silicate crystal is doped with Ta<5+> in the doping form of Ta2O5, doping quantity being 0.2-4 mol% / mol. The invention also provides a preparation method of the high-light-output bismuth silicate scintillation crystal. The preparation method includes the steps of: a) synthesizing a doped bismuth silicate polycrystal powder material through a solid phase sintering method, and compressing the doped bismuth silicate polycrystal powder material into compact cylindrical material bulks; b) fixing a seed crystal on a seed crystal position on the bottom of a crucible, and placing the polycrystal material bulks in the crucible and sealing the crucible, placing the crucible in a crystal growing furnace, and controlling temperature to be 1050-1200 DEG C, wherein the growth speed of the crystal is 0.2-0.6 mm / h. Because of doping of the Ta<5+>, light output of the BSO crystal is greatly increased. The preparation method achieves high-light-output and high-quality growth of the bismuth silicate monocrystal, is simple in technical equipment, can grow a plurality of crystal rods simultaneously, and greatly improves the growth efficiency and application of the bismuth silicate scintillation crystal.

Description

technical field [0001] The invention belongs to the field of materials science, and relates to a crystal material, in particular to a bismuth silicate scintillation crystal with high light output and a preparation method thereof. Background technique [0002] Bismuth silicate (Bi 4 Si 3 o 12 , referred to as BSO) is a new type of scintillation crystal, and the famous bismuth germanate (Bi 4 Ge 3 o 12 , referred to as BGO) crystals belong to the cubic crystal system, have similar structures, and have similar physical and chemical properties, such as high density, short irradiation length, small Molière radius, no deliquescence, easy processing and so on. At the same time, the decay time (100ns) of BSO crystal is 1 / 3 of that of BGO, and the irradiation hardness (10 5 ~10 6 rad) is an order of magnitude higher than BGO, and SiO 2 The raw material is cheap, and it is an ideal material to replace BGO, which can be potentially applied in high-energy physics, nuclear medica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/34C30B11/02C30B28/02
CPCC30B11/02C30B28/02C30B29/34
Inventor 徐家跃冯海威田甜申慧储耀卿李旭祥王洪超
Owner SHANGHAI INST OF TECH
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