Large-scale production method for chemical vapor deposition (CVD) graphene film

A graphene film and production method technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as the limited number of samples hanging, and achieve the effect of preventing adhesion

Active Publication Date: 2016-05-25
WUXI GRAPHENE FILM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to quality and volume limitations in existing technologies, the number of samples to be mounted is limited

Method used

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  • Large-scale production method for chemical vapor deposition (CVD) graphene film
  • Large-scale production method for chemical vapor deposition (CVD) graphene film
  • Large-scale production method for chemical vapor deposition (CVD) graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A kind of large-scale production method of CVD deposited graphene film, concrete operation steps are as follows:

[0040] 1) sample loading

[0041] Press as figure 1 and 2 Shown is a schematic diagram of a separate loading unit, the isolation layer 2 and the metal base 3 are placed alternately, that is, first place a layer of isolation layer 1 on the pallet 1, and then place the metal base 2, the placement method is "isolation layer 2 + metal base 3 ” is the basic unit, which is repeated in turn. In this embodiment, the metal base adopts copper foil with a size of 20cm*30cm, and stacks up to 100 layers of copper foil;

[0042] 2) grow

[0043] a. Put the sample into the process chamber, close the process chamber, evacuate to below 10mTorr, and raise the temperature to 1000°C;

[0044] b. Hydrogen annealing at a flow rate of 500 sccm for 30 minutes;

[0045] c. Press H 2 :CH 4 =500sccm: 500sccm ratio was grown at 1000°C for 60min;

[0046] 3) cooling

[0047] A...

Embodiment 2

[0054]A kind of large-scale production method of CVD deposited graphene film, concrete operation steps are as follows:

[0055] 1) sample loading

[0056] Press as figure 1 and 2 Shown is a schematic diagram of a separate loading unit, the isolation layer 2 and the metal base 3 are placed alternately, that is, first place a layer of isolation layer 1 on the pallet 1, and then place the metal base 2, the placement method is "isolation layer 2 + metal base 3 ” is the basic unit, and the cycle continues in turn. The metal base of this embodiment uses copper foil with a size of 20cm*30cm, and stacks up to 90 layers of copper foil;

[0057] 2) grow

[0058] a. Put the sample into the process chamber, close the process chamber, evacuate to below 10mTorr, and raise the temperature to 1000°C;

[0059] b. Hydrogen annealing at a flow rate of 500 sccm for 30 minutes;

[0060] c. Press H 2 :CH 4 =400sccm:600sccm ratio was grown at 1000°C for 60min;

[0061] 3) cooling

[0062] A...

Embodiment 3

[0069] A kind of large-scale production method of CVD deposited graphene film, concrete operation steps are as follows:

[0070] 1) sample loading

[0071] Press as figure 1 and 2 Shown is a schematic diagram of a separate loading unit, the isolation layer 2 and the metal base 3 are placed alternately, that is, first place a layer of isolation layer 1 on the pallet 1, and then place the metal base 2, the placement method is "isolation layer 2 + metal base 3 ” is the basic unit, and the cycle continues in turn. The metal base of this embodiment uses copper foil with a size of 40cm*60cm, and stacks up to 70 layers of copper foil;

[0072] 2) grow

[0073] a. Put the sample into the process chamber, close the process chamber, evacuate to below 10mTorr, and raise the temperature to 1200°C;

[0074] b. Annealing with argon gas at a flow rate of 500 sccm for 30 minutes;

[0075] c. Press Ar:CH 4 =500sccm:1000sccm ratio was grown at 1200°C for 90min;

[0076] 3) cooling

[00...

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Abstract

The invention discloses a large-scale production method for a chemical vapor deposition (CVD) graphene film. By the adoption of a CVD technology, first, heat treatment is performed on metal substrates under a vacuum state, inert gas and carbon source gas are injected, the carbon source gas is subjected to catalytic pyrolysis on the surfaces of the metal substrates at high temperature, then graphene grows, large-scale growth is achieved by the adoption of the mode that the multiple layers of metal substrates are overlaid, and every two adjacent layers of metal substrates are separated through a separation layer. Through arranging the separation layers, adhesion between the metal substrates is prevented, in addition, deposition of high-quality graphene on each layer of copper coil is not affected, the multiple layers of metal substrates used for graphene growth can be installed on one basal plate, in this way, the capacity which is a hundred times that of a traditional CVD method is achieved through the same reaction furnace, and large-scale production is achieved.

Description

technical field [0001] The invention relates to a large-scale production method of a CVD deposited graphene film. Background technique [0002] At present, there are many methods for preparing graphene, including micromechanical exfoliation, chemical exfoliation, silicon carbide epitaxial growth, and chemical vapor deposition. Among them, the mechanical exfoliation method has a simple process and high product quality, but only a small amount of graphene can be obtained, which has low efficiency and large randomness; the SiC surface epitaxial growth method can obtain large-area single-layer graphene with high quality, but this The growth efficiency of the method is low, the controllability is poor, and the growth conditions are harsh, and the graphene is difficult to transfer; the graphene prepared by the chemical exfoliation method contains many defects due to the participation of the strong oxidation process, the conductivity is poor, and the size of the graphene is relativ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/458
CPCC23C16/26C23C16/4583
Inventor 孟怡楠谭化兵刘海滨沈大勇王炜
Owner WUXI GRAPHENE FILM
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