High-extinction-ratio TE optical switch based on panel photonic crystals

A technology of photonic crystals and optical switches, applied in light guides, optics, optical components, etc., can solve the problems of large energy consumption and huge energy consumption

Active Publication Date: 2015-03-25
深圳市浩源光电技术有限公司
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Most of the current optical switches are realized by nonlinear effects, and nonlinear effects require the use of high-power control light, which will inevitably consume a lot of energy. When the system is highly integrated and the number of communication users is large, the energy consumption will become very huge

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-extinction-ratio TE optical switch based on panel photonic crystals
  • High-extinction-ratio TE optical switch based on panel photonic crystals
  • High-extinction-ratio TE optical switch based on panel photonic crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] In this embodiment, different photonic band structure diagrams in the horizontal direction are obtained through the first and second flat photonic crystals, image 3 It is the photonic band structure diagram of the second flat photonic crystal, and the normalized frequency (a / λ) of the TE forbidden band in the photonic band structure diagram is 0.400~0.4325; Figure 4 It is the photonic band structure diagram of the first flat photonic crystal, and the normalized frequency frequency (a / λ) of the TE forbidden band is 0.4303-0.5216. It can be seen from the comparison that in the normalized frequency (a / λ) range of 0.400-0.4303, the structure realizes a high extinction ratio TE optical switch, thereby realizing the high extinction ratio optical switch function.

Embodiment 2

[0054] In this embodiment, different photonic band structure diagrams in the vertical direction are obtained through the first and second flat photonic crystals, Figure 5 It is the photonic band diagram of the second flat photonic crystal, and the normalized frequency (a / λ) of the TE forbidden band in the photonic band diagram is 0.400~0.4325; Image 6It is the photonic band diagram of the first flat photonic crystal, and the normalized frequency (a / λ) of the TE forbidden band is 0.4303-0.5216. The comparison shows that in the normalized frequency (a / λ) range of 0.400-0.4303, the structure realizes a high extinction ratio TE optical switch, thereby realizing the high extinction ratio optical switch function.

Embodiment 3

[0056] In this example, the normalized operating frequency (a / λ) is 0.4057, and the first implementation mode is used to verify the numerical value of the three-dimensional structure, in which there are 9 layers of high-refractive index rotating dielectric rods and 37 layers of high-refractive index medium veins , by such as Figure 7 Numerical simulation results show that: the switching effect is very good.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-extinction-ratio TE optical switch based on panel photonic crystals. The high-extinction-ratio TE optical switch comprises an integral with the upper panel photonic crystal and the lower panel photonic crystal connected. The upper panel photonic crystal is a first panel square lattice photonic crystal with a complete forbidden band. A cell of the first panel square lattice photonic crystal is composed of a high-refraction-index rotating square rod, three first panel medium rods and a background medium. Each first panel medium rod is composed of a high-refraction-index medium sleeve and a low-refraction-index medium in the sleeve or is composed of one to three high-refraction-index panel thin films or is composed of a low-refraction-index medium. The lower panel photonic crystal is a second square lattice photonic crystal with a complete forbidden band. A cell of the second square lattice photonic crystal is composed of a high-refraction-index rotating square rod, three high-refraction-index second panel medium rods and a background medium which is a low-refraction-index medium. The frequency of the TE optical switch ranges from 0.4057 to 0.406. The high-extinction-ratio TE optical switch is obtained.

Description

technical field [0001] The invention relates to a high extinction ratio TE optical switch, in particular to a broadband high extinction ratio TE optical switch based on flat photonic crystal absolute band gap. Background technique [0002] In recent years, with the advent of the information age, the speed and amount of information in communication technology have increased dramatically. Optical communication technology has given wings to the information age, but at present, information processing in nodes and routes still requires circuit implementation, which restricts the development of communication technology in terms of speed, capacity and power consumption. The use of photonic integrated optical circuits to replace or partially replace integrated circuits to realize communication routing is bound to become the future development direction. [0003] A photonic crystal is a material structure in which dielectric materials are periodically arranged in space, and is usual...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02B26/00G02B6/122
CPCG02F1/3133G02B6/122G02B6/1225G02B2006/12145G02F2201/06G02F2202/32G02F2203/07
Inventor 欧阳征标文国华
Owner 深圳市浩源光电技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap