113results about How to "Reduced scattering effect" patented technology

Disclosed herein are various embodiments of an adaptive ladar receiver and associated method whereby the active pixels in a photodetector array used for reception of ladar pulse returns can be adaptively controlled based at least in part on where the ladar pulses were targeted. Additional embodiments disclose improved imaging optics for use by the receiver and further adaptive control techniques for selecting which pixels of the photodetector array are used for sensing incident light.

Disclosed herein are various embodiments of an adaptive ladar receiver and associated method whereby the active pixels in a photodetector array used for reception of ladar pulse returns can be adaptively controlled based at least in part on where the ladar pulses were targeted. Additional embodiments disclose improved imaging optics for use by the receiver and further adaptive control techniques for selecting which pixels of the photodetector array are used for sensing incident light.

A method for the acquisition of images by means of confocal microscopy in which a new image is calculated which is constituted by the "maxima" among the corresponding elements of each captured image. The new image contains mainly the signal coming from the most luminous and in focus areas and even the signal coming from the less luminous areas, as being out of focus or laterally displaced with respect to the grid positions. A further image is then calculated which is constituted by the "minima" among the corresponding elements of each captured image and the requested confocal image is then obtained by calculating the difference between the "maxima" image and the "minima" image.

The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

The invention discloses a continuous laser device spectral line width measurement device based on an optical frequency comb. The continuous laser device spectral line width measurement device is characterized by comprising an optical frequency comb control module, an optical frequency comb seed source, an optical frequency comb spectrum broadening module, a continuous laser generating source, an optical beam combining module, an optical frequency selecting filtering module, a beat frequency detecting module and a signal reading module. The spectrum of the precisely-controlled optical frequency comb is broadened, output light of the precisely-controlled optical frequency comb and output light of the continuous laser generating source together enter the optical beam combining module, the light spots of two outgoing laser beams coincide, and then the two laser beams together enter the optical frequency selecting filtering module, two laser beams obtained through filtering pass through the beat frequency detecting module, the sizes of light spots are changed through shaping, and the light spots are concentrated on a detector, beat frequency signals are obtained through coherent combination, and the output spectral width of the continuous lasers to be measured can be contained through the signal reading module. The continuous laser device spectral line width measurement device is stable in structure and high in practicability, the measurement process is rapid and simple, and the output spectral width of one or more wave length continuous lasers can be obtained in real time.

The invention discloses a method for acquiring a laser meat image by a double-laser triangle method. The method comprises the following steps of: 1) establishing a view field; 2) storing a gradient different between a laser meat curve and a laser plane reference curve which serves as meat thickness information to be a laser image meat thickness curve, and combining multi-frame laser meat thickness curves into a laser image according to an acquisition sequence; 3) unifying two laser images acquired by a left charge coupled device (CCD) camera and a right CCD camera to be under the same coordinate; and 4)splicing the laser images acquired at left and right angles under the unified coordinate into the same laser image to form a complete meat laser image.

The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

A method for optical tomography is adapted to measure a medium, and includes the following steps: (A) generating a two-frequency mutually correlated low-coherence beam, an optical path difference of the beam being smaller than a coherence length; (B) focusing the beam on different depth positions of the medium such that the beam becomes a signal beam after being reflected by the medium; and (C) analyzing the signal beam reflected by the medium using a signal processing unit that includes a lens and a pinhole located at a focal point of the lens so as to obtain a sectioning image of the medium.

Provided is a fingerprint identification system based on a raster structure and a microprism array, comprising a light source, an optical waveguide, a microprism array, a raster, a fingerprint detection area and an image device. The system employs a raster structure on the optical path of a light source entering the optical waveguide, allowing the light emitted by the light source to be diffracted by the raster and then propagate horizontally in the optical waveguide so as to form fingerprint detection light, and controls a raster period to avoid overlapping between a fingerprint identification area and a raster area, thereby guaranteeing the signal to noise ratio of a fingerprint graph; in order to more easily damage the total reflection of the fingerprint identification area, the surface of the optical waveguide is provided with a microstructure of a specific shape to change the normal direction of a total reflection surface, thereby substantially increasing a signal to noise ratio of a fingerprint image, meanwhile greatly reducing the thickness of the optical waveguide, and realizing a miniature and ultra-thin system.

The invention relates to a cone beam CT scatter correction method and system. The method comprises the following steps that an attenuation coefficient matrix of an X-ray passing through an attenuation screen on a detector is calculated; under the condition that the attenuation screen is included, projected images of a radiated object are acquired; scatter correction is conducted on each projected image; the projected image of a template body without the attenuation screen is estimated through the attenuation coefficient matrix; the image is reconstructed through a FDK algorithm. The cone beam CT scatter correction method can effectively lower the scatter influence on cone beam CT image reconstruction, and the image quality is improved. Circular scanning is only conducted on cone beam CT for one time, and irradiation dose is not additionally increased. The cone beam CT scatter correction method is simple to implement, and the main structure and the stability of the cone beam CT are not changed. The cone beam CT scatter correction system can effectively lower the scatter influence on cone beam CT image reconstruction, improve the image quality, and overcome the technical difficulty of poor cone beam CT imaging quality.

A display device including a insulating substrate, an organic layer disposed on the insulating substrate, a common electrode disposed on the organic layer and a bead layer including a plurality of beads through which light from the organic layer passes. A method of fabricating a display device, the method including forming an organic film on a insulating substrate, forming a first transparent electrode layer on the organic film and forming a bead layer including a plurality of beads on the first transparent electrode layer.

The invention provides a dual-color two-photon fluorescence imaging method and a device, which uses six dual-color beams for emitting along plus and minus X, plus and minus Y, plus and minus Z six directions into the sample 3, thereby forming a three-dimensional lattice for exciting fluorescence, and uses a two-dimension small hole array 6 for filtering background fluorescence in the detecting light path, uses femtosecond pulsed laser with two different kinds of frequencies for composing a dual-color beam, wherein the two are coaxial, and the wavelengths are lambada 1 and lambada 2 respectively, moreover, lambada 1 is equal to lambada 2. Two kinds of light with different wavelength form two different three-dimensional lattice structures in the sample 3, and delay line 10 is modulated for causing the six beams to have the same optical path, only in the zone where two kinds of three-dimensional lattices coincide mutually, the dual-color two-photon fluorescence can be excitated. The device provided by the invention can effectively improve resolution response and imaging speed of three-dimensional imaging, and can be conveniently operated.

The invention belongs to the technical field of fault diagnosis of electrical equipment and relates to an in-situ detection method of fault characteristic gas dissolved in transformer oil. According to the method, single frequency single-mode-based transverse mode (TEM00) laser having wavelength of 532 nm irradiates a standard oil sample, the laser passes through a first high-pass filter and a space filter unit and then passes through a second high-pass filter and a lens, a Raman spectrum acquisition device acquires a standard oil sample Raman spectrogram, and after modeling, ethylene, acetylene and carbon dioxide concentrations in the oil sample to be detected are determined without oil and gas separation. The method has high accuracy and simple processes, can directly detect concentration of multiple fault characteristic gas dissolved in transformer oil and improves the accuracy of fault prediction.

The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and / or ellipsometric methods.

A display device including a insulating substrate, an organic layer disposed on the insulating substrate, a common electrode disposed on the organic layer and a bead layer including a plurality of beads through which light from the organic layer passes. A method of fabricating a display device, the method including forming an organic film on a insulating substrate, forming a first transparent electrode layer on the organic film and forming a bead layer including a plurality of beads on the first transparent electrode layer.

The invention provides a system and a method for inhibiting a stimulated Brillouin scattering effect in a high-power narrow-linewidth optical fiber laser amplifier. According to the system, single-frequency laser output by a single-frequency laser device in a high-power narrow-linewidth optical fiber laser amplifier is subjected to phase modulation, wherein the adopted phase modulation signal is phi f (t), phi f (t) is rem (phi (t) / 2pi), single-frequency laser spectrum broadening is achieved, and the purpose of restraining the stimulated Brillouin scattering effect is achieved. Compared with the existing white noise signal modulation and pseudo-random phase encoding modulation, the method of the invention has the following characteristics that efficient stimulated Brillouin scattering suppression can be achieved, and theoretical basis and technical support are provided for further power improvement of a high-power and narrow-linewidth optical fiber laser system.

The present invention relates to a method for determining the depth of a buried structure in a semiconductor wafer. According to the invention, the layer behavior of the semiconductor wafer which is brought about by the buried structure when the semiconductor wafer is irradiated with electromagnetic radiation in the infrared range and arises as a result of the significantly longer wavelengths of the radiation used in comparison with the lateral dimensions of the buried structure is utilized to determine the depth of the buried structure by spectrometric and / or ellipsometric methods.

The embodiment of the invention provides a transparent display device, a simulation method and a manufacturing method; the transparent display device comprises a substrate and a plurality of pixels distributed on the substrate in an array; and each pixel comprises a transparent area and a display area; and a scattering structure used for scattering light is arranged along the boundary line betweenthe transparent area and the display area. According to the transparent display device, the simulation method and the manufacturing method provided by the embodiment of the invention, the diffractionghosting phenomenon can be improved.

The invention relates to a method and a device for inhibiting stimulated Brillouin scattering based on multiple frequency phase modulation, in particular to a method and a device for inhibiting stimulated Brillouin scattering through a multiple frequency phase modulation method in an optical fiber system, aiming at solving the problems of smaller inhibition degree, lower efficiency and poorer stability of the prior method for inhibiting the stimulated Brillouin scattering. Pumping light is split after being modulated, the spectrum of a first output beam is measured, a second light beam is split, and the centripetal fiber power P of the split first light beam is measured; and the second light beam enters a single mode optical fiber through an optical circulator and the power P SBS is measured. A multiple frequency phase modulator, an optical isolator and a first coupler are all arranged on an emission light path of a single mode laser, an F-P interferometer and a second coupler are respectively arranged on two emergence light paths of the first coupler, a first detector and the optical circulator are respectively arranged on two emergence light paths of a second coupler, a second detector is arranged on a reverse emergence light path of the light circulator, and the single mode optical fiber is arranged on an emergence light path of the light circulator.

The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.

The invention provides a depth field imaging monitoring apparatus for medium or small ocean plankton, which includes a underwater imaging sealed cabin, a depth field imaging illumination sealed cabin and a support frame. An LED for providing illumination beam is provided in the depth field imaging illumination sealed cabin which is fixed onto the support frame. An object lens, a digital imaging system and a digital image data collecting card are provided in the underwater imaging sealed cabin. An optical window is opened on the wall of the underwater imaging sealed cabin opposite to the depth field imaging illumination sealed cabin, and the underwater imaging sealed cabin is fixed on the support frame. The invention is capable of suppressing diffraction effect generated during transmission of non-imaging beam along the imaging optical path, greatly improving image quality of underwater images, enhancing accuracy of plankton object determination.

A method for generating ultra-short pulse amplified Raman laser light. Short pulse laser light is amplified, and a portion thereof is introduced into a Raman oscillator to produce compressed laser light. The compressed light is introduced to a first Raman amplifier. The remainder of the short pulse laser light is introduced to a polarizer, and the reflected light is introduced into the first Raman amplifier to pump it. The light transmitted through the first Raman amplifier that has not contributed to pumping is introduced to a beam splitter to produce a second reflected light that is passed to a second Raman amplifier to pump that amplifier. The compressed light is amplified in the first Raman amplifier and introduced to the second Raman amplifier to further amplify it. This further amplified radiation is passed through delay lines to the beam splitter, which passes only first Stokes radiation to generate ultra-short pulse amplified Raman laser light.

The invention discloses an all-optical information exchange method based on second order nonlinearity. The method selects a single optical device with the second order nonlinearity, utilizes a second order nonlinear effect parameter attenuation and wavelength conversion combined function mechanism, and can achieve the information exchange function among wavelength carrying different data information in an all-optical domain. Information exchange is transparent to data modulation modes. Before the all-optical information exchange is performed by using the method, required pumping light wavelength is selected according to quasi-phase matching wavelength of the optical device with the second order nonlinearity, and simultaneously required pumping light luminous power is given according to the generation condition of the all-optical information exchange. The method uses the single optical device and is simple in scheme and easy to achieve. For selection of the single optical device, optical waveguide with the second order nonlinearity can be used flexibly and is small in size and easy to integrate.

The invention discloses an underwater optical imaging system sealing device. The underwater optical imaging system sealing device comprises a main sealed cabin composed of a front end cover, a main cabin body and a rear end cover, and a chute and a bottom plate are arranged in the main sealed cabin; the sealing device further comprises a cooling device; the cooling device is composed of a semiconductor cooling fin, a cooling fan, a temperature sensor, an underwater electrical connector and leads; the semiconductor cooling fin and the cooling fan are connected with the underwater electrical connector through the leads; the temperature sensor monitors temperature values in the main sealed cabin in real time. The underwater optical imaging system sealing device is featured with waterproof sealing, corrosion and pressure resistance and reliable cooling. The underwater use requirements of the optical imaging system are satisfied through mounting the optical imaging system in the main cabin body and connecting with electricity energy from the outside through the underwater electrical connector.

The invention relates to a counter for metal nano particles in solution, which is used for measuring relative concentration of metal nano particles in solution. The counter comprises a laser, a neutral attenuator, a beam expanding lens, a cover glass or a sample cell, a micro objective, a dichroic mirror, a lens, a pinhole, a single photon detector, a data collection card and a computer. Sample solution is placed on the cover glass or on the sample cell, the laser irradiates the metal nano particles in the solution, the produced scattered light is focused on the pinhole by the lens after being collected by the objective lens and the pinhole is coupled with the single photon detector. Signals generated by the single photon detector are output by the computer via the data collection card. The operating principle of the invention is based on a very small laser confocal irradiation micro-area (-10 litre), photon burst occurs when the metal particles enter or leave the micro-area due to Brownian movement, the number of the photon burst is proportional to concentration thereof. The counter of the invention can be applied to researches and clinical detection in fields such as biomedicine, chemistry, physics and the like.

The invention discloses a long-wave infrared broadband achromatic metasurface lens, and belongs to the field of infrared imaging and the field of micro-nano photonics. Metasurface lens units in the metasurface lens are periodically arranged in a tetragonal lattice form; the metasurface lens unit is composed of a dielectric substrate and a microstructure located in the center of the dielectric substrate, and a projection pattern of the microstructure on the dielectric substrate is a graph which is in rotational symmetry about a 90-degree angle; the phase and phase dispersion introduced by the microstructures at different positions meet the following formulas shown as the specification, and the microstructure selection mode at each position is as follows: a theoretical parameter combinationis obtained according to the two formulas, the phase of the unit where each microstructure is located and the corresponding phase dispersion are obtained through weighted first-order linear fitting, and are recorded as actual parameter combinations, the parameter combinations are drawn in a same scatter diagram, and the microstructure corresponding to the actual parameter combination closest to the theoretical parameter combination is selected. According to the invention, broadband achromatism can be realized in a long-wave infrared band.

According to an exemplary embodiment of the present disclosure, apparatus and method can be provided for generating information for at least one structure. For example, using at least one first arrangement, it is possible to receive at least one first radiation from the at least one structure and at least one second radiation from a reference, and interfere the first and second radiations to generate at least one third radiation. Further, with at least one second arrangement, it is possible to generate spectroscopic data as a function of the at least one third radiation, and reduce at least one scattering effect in the spectroscopic data to generate the information. In addition or as an alternative, according to a further exemplary embodiment of the present disclosure, it is possible to classify a type of the structure based on the spectroscopic data to generate the information.

The invention relates to an RCS evaluation carrier for vertical polarized waves. The RCS evaluation carrier is composed of a metal frame structure and a metal skin wrapping the metal frame structure. The overall appearance of the RCS evaluation carrier is in a flat cone shape, and the RCS evaluation carrier comprises a top face and a bottom face. The top surface adopts a rhombic design; the bottom surface is a smooth arc-shaped curved surface; the head part and the tail part of the RCS evaluation carrier are pointed cones, and the middle part of the RCS evaluation carrier is an arc-shaped transition section; and the pointed cone at the tail part of the RCS evaluation carrier is designed to be bent downwards. The RCS evaluation carrier solves the problem of RCS evaluation of aircraft parts under the irradiation of the vertical polarized waves; the RCS evaluation carrier can have very low backscattering within the azimuth angle of 0-50 degrees, the mean value reaches the magnitude of-50 dBm < 2 >, and in the angular domain, the low-backscattering carrier is combined with a component for use, so that the accurate vertical polarization RCS of the component can be obtained.

The invention discloses a device for restraining stimulated Brillouin scattering of optical fibers for a single-frequency linear polarization optical fiber amplifier. The device is a metal barrel formed by jointing two ends of a first metal semi-barrel and a second metal semi-barrel by a metal fixed block, wherein a single-thread groove for embedding the active optical fibers of the single-frequency linear polarization optical fiber amplifier is etched in the inner wall of the metal barrel from top down,; the second metal semi-barrel is provided with a water cooling device or a thermoelectric cooler (TEC) temperature control module; and the active optical fibers are led in and out through two inclined through holes on the barrel wall of the metal barrel. The device can effectively restrain the stimulated Brillouin scattering of the single-frequency linear polarization optical fiber amplifier in a laser amplifying process, so that the high-power and high-beam-quality output of the single-frequency linear polarization optical fiber amplifier can be realized; meanwhile, the device has a simple and compact structure, is convenient to integrate and can be applied in a plurality of high-power single-frequency laser fields.