18results about How to "Reduced scattering effect" patented technology

The invention discloses a graphene composite perovskite manganese oxide polycrystalline ceramic and a preparation method and application thereof, and belongs to the technical field of non-refrigeration high-sensitivity infrared detection. The chemical expression of the graphene composite perovskite manganese oxide polycrystalline ceramic is La < 0.81 > (Ca < 0.03 > Sr < 0.16 >) MnO3: Gy, G is graphene, y is the mass fraction of graphene in perovskite manganese oxide composite powder, and y is equal to 0.1-0.2%. The TCR value of the prepared polycrystalline ceramic can reach 30% or above, the Tk value is close to 300K, the polycrystalline ceramic has excellent adaptability to room temperature work and excellent sensitivity to temperature change, and when the polycrystalline ceramic is applied to an uncooled infrared detector, the detection precision of the uncooled infrared detector can be effectively improved.

The invention belongs to the technical field of oxide target materials, and particularly discloses an indium gallium titanium oxide target material and a preparation method and application thereof. The indium gallium titanium oxide target material is prepared from the following raw materials in parts by mass: 95 to 99 parts of indium oxide, 0.5 to 2 parts of gallium oxide and 0.6 to 3 parts of titanium dioxide. According to the preparation method, gallium oxide and titanium dioxide in a proper proportion are doped in the indium oxide-based target material, so that an oxide film prepared from the target material has excellent light transmittance on the premise of keeping relatively low resistivity of the target material, and the oxide film prepared from the target material has relatively good mechanical flexibility, and can be applied to the field of organic light-emitting devices, such as organic light-emitting devices, organic light-emitting devices, organic light-emitting devices, organic light-emitting devices, organic light-emitting devices and organic light-emitting devices. And the method can be better applied to flexible OLEDs. The invention also provides a preparation method of the indium gallium titanium oxide target material.

A 2-micron large-energy solid two-way amplifier based on a single-frequency pulse optical fiber preceding stage can make full use of the small signal amplification capacity of optical fiber laser and the energy extraction capacity of solid laser, and meanwhile the problem that energy is difficult to improve due to the stimulated Brillouin scattering effect in an optical fiber is solved. And high-stability, high-repetition-frequency and large-energy single-frequency pulse laser output can be realized. The all-fiber cascade amplifier comprises an all-fiber cascade amplifier and a solid two-way amplifier, according to the all-fiber cascade amplifier, a continuous narrow-linewidth fiber laser is adopted as a seed source, continuous light is modulated into pulse light through an acousto-optic modulator, and the waveform, the pulse width and the repetition frequency of output pulse laser are adjusted; the modulated pulse light adopts a main oscillation power amplification structure and is preliminarily amplified by a polarization maintaining optical fiber amplifier; the solid-state amplifier adopts a two-way amplification structure, and further high-efficiency amplification is realized through solid-state two-way amplification. The whole laser system is compact in structure, stable, adjustable in parameter and capable of meeting application requirements of different scenes.

The invention discloses a process for processing a diamond blind groove by water-guided laser, which not only can optimize a laser incident angle, reduce a scattering effect and improve the smoothness of a groove wall through multi-angle compensation, but also can avoid periodic lines and defects caused by single-direction processing. The laser focus is always matched with the material surface through dynamic angle adjustment, the energy attenuation problem caused by depth increase is effectively relieved, and uniform machining of the bottom of the deep groove is ensured. And a complex multi-taper or gradual change structure can be realized, and the machining flexibility is obviously improved. Meanwhile, heat distribution is improved through multi-angle machining, the influence of heat accumulation on material performance is reduced, a water flow guide field is optimized, machining stability is enhanced, the limitation of the depth-diameter ratio is broken through, and the removal rate and machining precision are improved.

A neutron source irradiation device capable of switching gas paths disclosed by the present invention comprises a gas path switching rotor assembly, a transmission pipeline and a plurality of storage pipelines, the transmission pipeline is provided with an electromagnetic chuck, and a neutron source is stored in each storage pipeline. And the transmission pipeline can be communicated with the different storage pipelines through rotation of the gas path switching rotor assembly, so that neutron sources in the different storage pipelines can reach the electromagnetic chuck through the transmission pipeline. Neutron sources at different positions can be transmitted to the same position for irradiation, an independent transmission irradiation structure is provided, the irradiation position structure is simple, the scattering influence can be reduced, meanwhile, different neutron sources have good repeatability and consistency at the irradiation positions, position adjustment of a measured instrument is not needed, the verification efficiency is improved, and the detection cost is reduced. And the stability and consistency error of the generated neutron radiation field are ensured.

The invention belongs to the technical field of target material production, and particularly relates to a metal oxide powder composition, a doped indium oxide target material and a preparation method and application of the doped indium oxide target material. The metal oxide powder composition provided by the invention comprises the following components in percentage by mass: 95.5-99.1% of indium oxide powder, 0.3-1.5% of titanium oxide powder, 0.3-1.5% of zirconium oxide powder and 0.3-1.5% of tantalum oxide powder, an indium oxide doped target prepared from the metal oxide powder composition has low resistance, and a TCO film prepared from the metal oxide powder composition has high mobility and high light transmittance (greater than 85%) in a near-infrared band.

The invention discloses a high-strength and high-conductivity copper-tin alloy wire resistant to high-temperature softening and a preparation process thereof. The high-strength and high-conductivity copper-tin alloy wire comprises the following raw materials in percentage by mass: 0.25-0.35 wt.% of Sn; according to the Cu-Sn-Zr alloy wire, the tensile strength is 700 MPa or above, the electric conductivity is higher than 75% IACS, the softening-resistant temperature reaches 400 DEG C or above, the use requirement of the high-strength and high-conductivity Cu-Sn alloy wire at the high temperature can be met, and after deformation heat treatment of an alloy rod is completed, the tensile strength of the alloy rod is larger than or equal to 700 MPa, the electric conductivity is higher than 75% IACS, and the softening-resistant temperature reaches 400 DEG C or above; and the alloy bar is subjected to gradient cooling treatment through special gradient cooling equipment, so that the problems of hot cracks and the like in the cooling process are avoided, and the quality of the finished alloy bar is ensured.

The invention belongs to the related technical field of thin film transistors, and discloses a bigrid heterojunction thin film transistor and a preparation method and application thereof.The bigrid heterojunction thin film transistor comprises a substrate, a first grid, a first insulating layer, a first channel layer, a second channel layer, a source, a drain, a second insulating layer and a second grid, the second insulating layer is embedded in the first insulating layer; the first insulating layer is arranged on the first grid electrode and the substrate; the first channel layer is arranged on the first insulating layer, and the second channel layer is arranged on the first channel layer; the source electrode and the drain electrode are respectively arranged at two opposite ends of the second channel layer and are embedded in the second insulating layer; the second insulating layer is arranged on the second channel layer, the source electrode and the drain electrode; and the second grid electrode is arranged on the surface, far away from the second channel layer, of the second insulating layer. The mobility of the thin film transistor is effectively improved.

This invention discloses a high-strength, high-conductivity beryllium copper alloy rod for limit switches and its manufacturing method, belonging to the field of electronic component manufacturing technology. Its chemical composition, by weight percentage, includes: Be: 0.10%–0.30%, Co: 0.10%–0.30%, Ni: 0.30%–0.50%, Si: 0.020%–0.040%, Mn: 0.05%–0.10%, Zr: 0.05%–0.10%, Ag: 1.00%–1.20%, RE: 0.0140%–0.0180%, Ag-SiC: 0.80%–1.20%, Cu-CNTs: 0.40%–0.80%, Pb ≤ 0.005%, Sn ≤ 0.005%, other impurity elements ≤ 0.01%, and the balance being Cu. The manufacturing method includes electroless plating of SiC and CNTs with Ag and Cu, respectively, followed by gas atomization powdering, mixing, vacuum hot pressing sintering, hot extrusion, cold drawing, and aging treatment to obtain rods. This invention achieves simultaneous improvement in strength and conductivity through the synergistic effect of low Be and metal cladding reinforcement. The finished product has a yield strength >1050MPa, tensile strength >1200MPa, elongation >4%, and conductivity >40% IACS.

The invention relates to an insulated gate bipolar transistor with a trench gate structure and a preparation method of the insulated gate bipolar transistor, and the transistor comprises a substrate, a nucleating layer, a stress adjusting layer, a collector region, an N-type buffer layer, an N-type drift layer, a P-type emitter region, a channel layer and a barrier layer which are sequentially stacked, two-dimensional electron gas is formed between the channel layer and the barrier layer; the first emitter metal is in contact with the P-type emitter region, and a dielectric layer is arranged between the first emitter metal and the barrier layer and between the first emitter metal and the channel layer; the second emitter metal covers the first emitter metal and is in contact with the upper surface of the channel layer; the gate metal extends into the N-type drift layer, and a dielectric layer is arranged between the gate metal and the barrier layer, the channel layer, the P-type emitter region and the N-type drift layer; and the collector metal penetrates through the substrate, the nucleating layer and the stress adjusting layer and extends to the lower surface of the collector region. According to the transistor, the scattering effect is reduced, and the mobility of device electrons is improved.

This invention specifically relates to a machine vision-based visual correction method and system for intelligent conveyor belts in mining, belonging to the field of automation technology for mining transportation equipment. It includes: a continuous image acquisition module for conveyor belt edges; a temporal extraction module for lateral displacement at the edges; a frequency domain conversion and high-frequency jitter filtering module; a low-frequency deviation trend temporal restoration module; and an anti-interference correction execution control module. This invention employs global shutter imaging technology and a near-infrared grazing illumination scheme to address image geometric distortion under high-speed motion. Simultaneously, it utilizes the characteristics of long-wavelength light to reduce the impact of dust scattering, forming clear and sharp grayscale step features at the conveyor belt edges. Combined with a damped shock-absorbing gimbal and a pneumatic blowing device, it further suppresses the interference of mechanical vibration on image quality, maintaining the long-term cleanliness and thermal stability of the optical system.

The invention discloses a method for preparing a high-strength, high-conductivity, non-uniform grain structure alumina dispersion strengthened copper, the method comprising: 1. electrolytic copper powder and ethanol deformation and flake treatment; 2. high-temperature oxidation treatment; 3. low-speed dry grinding and crushing treatment; 4. large ball-to-material ratio ball milling activation and refinement; 5. small ball-to-material ratio ball milling activation; 6. heat treatment; 7. reduction treatment; 8. room temperature pre-pressing, crushing and exhausting followed by discharge plasma sintering. The invention constructs a multi-scale distributed powder through two-stage ball milling mixing of large ball-to-material ratio ball milling activation and refinement and small ball-to-material ratio ball milling activation, and forms non-uniform grain structure alumina dispersion strengthened copper after sintering, utilizes copper nanocrystals and ultrafine crystals and alumina nanoparticles distribution enriched area to strengthen the material, utilizes copper large grains and alumina nanoparticles distribution deficient area to reduce the electron scattering effect, so that the alumina dispersion strengthened copper has high strength performance while retaining excellent conductivity, and has a simple process and is easy to control.

The invention discloses an optical fiber laser amplification system and a dynamic suppression method for a stimulated Brillouin scattering effect. Through spectral data obtained by the spectral analysis probe, the analysis control unit rapidly analyzes spectral characteristic data of backward Stokes light in the fiber laser amplification system so as to judge the severity of the stimulated Brillouin scattering effect in the system, and the data are transmitted to the main control unit in real time. The main control unit intelligently regulates and controls the intelligent signal generator to generate different types of signals, the signals are injected into the electro-optic phase modulator to modulate the fundamental frequency signal light at different modulation depths, the spectrum is broadened to different degrees, the information is collected by the spectrum analysis probe again and processed again, and the process is repeated, so that the spectrum analysis accuracy is improved. Finally, the peak gain of the SBS can be reduced, and the stimulated Brillouin scattering effect in the fiber laser amplification system is effectively inhibited, so that the system power is improved.

The present invention proposes a D-BAW air bridge structure and a method for forming the same. The invention belongs to the technical field of bulk acoustic wave filters; the D-BAW air bridge structure comprises a substrate, a fence layer, a lower passivation layer, a lower electrode, a piezoelectric layer, an upper electrode and an upper passivation layer; the fence layer, the lower passivation layer, the lower electrode, the piezoelectric layer, the upper electrode and the upper passivation layer are sequentially deposited on the substrate, wherein an air bridge structure is arranged between the upper electrode and the piezoelectric layer.

The present invention relates to the field of optical technology, and in particular to a three-dimensional focusing lens and a fiber grating engraving method based on the lens, wherein a lens group, an image acquisition module, a beam expander, a toe plate, and a cylindrical mirror are integrated in the lens, wherein: the beam expander, the toe plate, and the cylindrical mirror are respectively embedded in the first position, the second position, and the third position of the laser receiving part of the lens group; the first position is located at the entrance end of the laser receiving part; the third position is located at the other end of the laser receiving part and close to the focusing point; the second position is located between the first position and the third position, and is provided with a card slot for assembling the toe plate; the image acquisition module and the cylindrical mirror are in the same plane, and are used for acquiring an optical image of an optical fiber in a specified direction based on the cylindrical mirror, and converting the optical image into a digital signal and transmitting it to a control end; the image acquisition module is also used for stopping the optical image acquisition in the specified direction when the focused light of the cylindrical mirror is captured and coincides with the optical fiber to be engraved in the specified direction.

This invention relates to the technical field of high-end voice coil motor spring preparation methods, specifically to a method for preparing CuTi alloy strip based on ultrasonic-assisted solidification and liquid nitrogen cold rolling. The specific process is as follows: ingredient preparation, determining the approximate content range of each element in the copper-titanium alloy; vacuum induction melting; ultrasonic vibration by applying ultrasonic fields of different power during alloy melting and solidification; solution treatment of the obtained copper-titanium alloy ingot, followed by water cooling; liquid nitrogen cold rolling, during which the copper-titanium alloy plate remains in a low-temperature environment to obtain a high-density nanotwinned structure; and aging treatment of the copper-titanium strip in a vacuum atmosphere furnace to obtain the final copper-titanium alloy strip. This invention solves the problem in existing methods where copper-titanium alloy ingots are prone to compositional segregation and coarse primary phase structures, leading to microstructural inheritance during subsequent deformation, thus hindering the synergistic improvement of the strength and conductivity of the copper-titanium alloy strip.

The utility model discloses a portable detector for heavy metal content of agricultural products, including detector body, is set up with the window on the detector body, the window top is provided with the cover of size matching, the inside installation of detector body has the light source and light source detector, the inside of detector body is placed with the colorimetric cup, the colorimetric cup is centrally arranged between the light source and light source detector. A kind of portable detector for heavy metal content of agricultural products of the utility model, in the process of detecting heavy metal content of agricultural products, through the cooperation of installation component, driving assembly, rotating assembly and knocking component, not only make the impurities suspended in sample solution surface in colorimetric cup settle, improve the precision of heavy metal content detection result, also eliminate the hidden trouble of fingerprint and liquid residue that manual shaking colorimetric cup can bring, reduce its influence on the transmission and scattering of light, reduce measurement error.

The invention provides a graphene field effect transistor based on a spin-coated insulating medium and a preparation method thereof, and the transistor comprises a substrate, a gate electrode, a gate medium layer, a first insulating layer, a second insulating layer, a source electrode, a drain electrode, and a graphene channel layer. Gate dielectric layers with the same height as a gate electrode are formed at the two ends of a gate electrode in the buried gate structure through a spin-coating insulating medium technology, so that the smoothness of subsequent processing is ensured, and an insulating dielectric layer with the same height as a source electrode and a drain electrode is formed through the spin-coating insulating medium technology and etching; when the graphene thin film is transferred to the processed substrate, the stress borne by the graphene thin film is greatly reduced, so that the damage to the graphene thin film is reduced, the contact area of the graphene and the substrate is reduced by the nano-sized grooves in the insulating layer, the influence of substrate scattering is reduced, the carrier mobility of the graphene is improved, and the performance of the device is improved.