Ionization-rate-controllable coating device based on high-power impulse magnetron sputtering

Abstract

The invention relates to an ionization-rate-controllable coating device based on high-power impulse magnetron sputtering, which comprises a vacuum sputtering system, a low-voltage direct-current power system, a high-voltage impulse power system, a PLC (Programmable Logic Controller) central control system and a computer, wherein the low-voltage direct-current power system provides a low-voltage current for the vacuum system, and the high-voltage impulse power system provides a high-voltage impulse current for the vacuum system; the PLC central control system is used for controlling the vacuum system, low-voltage direct-current power system and high-voltage impulse power system; and the PLC and computer are used for transmitting and controlling data. The invention effectively shortens the delay time of the impulse current due to the preset direct-current voltage, effectively ensures the film deposition rate by coupling the direct-current magnetron sputtering, and establishes a plasma ionization-rate-adjustable HIPIMS (high-power impulse magnetron sputtering) technique, thereby providing technical support for research in related science.

Description

technical field [0001] The invention relates to a HIPIMS magnetron sputtering device with adjustable plasma ionization rate under the magnetron sputtering coupling voltage mode. Background technique [0002] As a very advantageous physical vapor deposition technology, magnetron sputtering has been widely used in many fields such as microelectronics, optical thin film and material surface treatment. However, due to the low ionization rate, this technology also has certain limitations in improving the quality of the film, which is manifested in the instability of the preparation process and poor film-base binding force. [0003] Improving the plasma ionization rate and increasing the controllability of the film formation process have always been a major demand for engineering applications in the surface field. High power density pulsed magnetron sputtering (HIPIMS) is a new surface modification technology developed under this background. It is the most meaningful breakthrough...

AI Technical Summary

Problems solved by technology

[0006] HIPIMS is an emerging technology that provides a high ionization rate plasma source, which can be used to achieve adjustable plasma ionization rate within a certain range, but because the standard HIPIMS power supply uses a lower pulse frequency (5HZ-200HZ) and low Duty cycle (0.1% ~ 10%), in order to maintain the normal operation of magnetron sputtering, it must ensure that it has a high pulse peak energy density, so the plasma ionization rate cannot be achieved only based on the regulation of the standard HIPIMS power supply Effective control

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