The invention discloses a method for depositing a film through high ionization rate high power pulse magnetron sputtering, relates to the technical field of film materials, and mainly solves the problems that the existing target is low in ionization rate, the plasma is nonuniform and the film uniformity is poor. The method comprises the following steps: I, cleaning a chamber, and fixing a test sample on a planet platform; II, placing the planet platform in the sealed chamber, vacuumizing the chamber, and removing moisture on the test sample and absorbed air; III, applying back bias voltage on the test sample, and feeding high-purity Ar; IV, feeding Ar and N2 in the chamber, and applying impulse voltage on a sputtering target for surface coating; V, adopting a stepping motor to control the motion track of the planet platform so as to control film coating; VI, taking the test sample out when the temperature in the vacuum chamber is reduced to the room temperature. According to the invention, target magnetic field control during film preparation and target voltage applying form during film coating are changed, so that the film thickness and density are easy to control, and the binding force and the uniformity are high.