66 results about "High-power impulse magnetron sputtering" patented technology

Methods and systems are disclosed for depositing aluminum nitride thin films by reactive sputtering using a sequence of negative-polarity voltage pulses applied to an aluminum target, followed by a positive-polarity voltage pulse. HiPIMS-type waveforms may be used to implement the negative-polarity and / or positive-polarity pulses. A substrate is provided in a sputtering chamber, a process gas comprising an inert gas and a nitrogen-containing gas is introduced, and the chamber is maintained at a reduced pressure. A sequence of negative-polarity voltage pulses is applied to an aluminum target, followed by application of a positive-polarity voltage pulse to the target. The disclosed methods and systems can produce aluminum nitride thin films exhibiting improved crystallinity, thermal conductivity, and surface quality at reduced deposition temperatures (e.g., below 200° C.) and with deposition rates of at least about 50 nm / min suitable for industrial applications.

The invention provides a TiNbCrZr high-entropy film and a preparation method and application thereof.According to the preparation method, a high-power pulse magnetron sputtering technology is adopted, Ti blocks, Nb blocks, Cr blocks and Zr blocks with the specific mass ratio and the purity larger than or equal to 99.9% are periodically arranged to form a composite target material, and technological parameters such as the target-substrate distance of 50-70 mm, the working pressure of 0.3-0.5 Pa, the pulse width of 100 microseconds and the trigger voltage of 700-900 V are matched for regulation and control, so that the TiNbCrZr high-entropy film is obtained. The ionization rate of the target material can be improved to solve the problem of low ionization rate, and the structure and components of the thin film can be optimized by adjusting the alloy proportion of the target material and the peak power of the HPPMS; compared with a traditional magnetron sputtering product, the TiNbCrZr high-entropy film prepared through the method is higher in binding force, more compact in structure and more excellent in quality, a high-quality high-entropy coating with high wear resistance can be obtained finally, and precise optimization of film components and performance is achieved.

The invention relates to the technical field of coatings, in particular to a PVD (Physical Vapor Deposition) coating process method applied to a galvanized sheet stamping die, which comprises the following steps of: pretreating the die, cleaning the surface of the die by a wet process, placing the die in a vacuum deposition cavity, vacuumizing, and heating to a preset temperature in an inert gas environment; plasma pretreatment is conducted on the surface of the mold, a high-power pulse magnetron sputtering cathode of a chromium target is selected to discharge in the argon working environment to generate plasma rich in chromium ions, and negative bias voltage is applied to the mold; starting at least one unbalanced magnetron sputtering cathode, gradually increasing the target current by the unbalanced magnetron sputtering cathode in a current ramp-up mode so as to improve the target voltage, and synchronously introducing nitrogen as a reaction gas, so that a nitride transition layer is deposited on the surface of the mold; and a high-power pulse magnetron sputtering cathode and an unbalanced magnetron sputtering cathode synchronously work on the transition layer to carry out multi-source reactive sputtering deposition, so that a multi-layer hard coating formed by alternating titanium aluminum vanadium and chromium nitride is formed. By combining the high-power pulse magnetron sputtering technology and the unbalanced magnetron sputtering technology, the problems that in the prior art, a coating is poor in adhesive force and insufficient in high temperature resistance are solved.

The invention provides a preparation method of a high-entropy nitride anti-erosion coating, which comprises the following steps: (1) polishing, cleaning and drying a sample in sequence, placing the sample in a vacuum coating chamber, introducing argon Ar, adjusting the flow of the argon Ar, and carrying out ion bombardment cleaning on the surface of the sample; (2) acquiring the optical emission intensity of the plasma after argon Ar is introduced and the optical emission intensity of the plasma after nitrogen N2 is introduced; (3) depositing a high-entropy alloy transition layer on the surface of the sample; (4) depositing a high-entropy nitride anti-erosion coating on the surface of the sample; and (5) taking out the sample to complete preparation of the coating on the surface of the sample. The preparation of the high-entropy nitride anti-erosion coating is completed by adopting a bipolar high-power pulse magnetron sputtering technology and an ion source to jointly construct a high-density plasma film forming environment, so that the nitridation reaction on the surface of the target material can be effectively inhibited, and the characteristic peak intensity of the plasma is kept unchanged; and the stability of plasma components in the film forming process is ensured.

The invention discloses an ABS plastic part low-temperature metallization vacuum coating process and equipment. The equipment comprises a machine body, a coating tank is embedded in the machine body, a side plate is fixedly installed at the upper end of the machine body, a storage rack is movably installed in the coating tank, an operation ring is movably installed in the coating tank, and the side face of the operation ring is movably connected with a threaded rod through threads. The stable coating equipment is arranged, a plastic part is placed in a storage rack in the vacuum coating equipment, a plasma cleaning opening in the upper end of an operation ring is used for cleaning the surface of the plastic part and removing grease and impurities on the surface, and a temperature controller is installed in the equipment and used for controlling the internal temperature; when the temperature is too high, the liquid nitrogen cooling system is used for cooling, the high-power pulse magnetron sputtering device mounted at the upper end of the operation ring is used for coating a plastic part and depositing a metal layer, finally, ultraviolet curing treatment is performed, and meanwhile, the high-power pulse magnetron sputtering technology is adopted, so that the pollution to the environment is reduced, and the coating precision is improved.

A preparation method for a gradient near-equiaxed crystal Cr coating on the surface of a zirconium alloy cladding is described. According to the present invention, a high-power impulse magnetron sputtering technology is adopted, and by self-modification of HiPIMS equipment, argon gas is introduced into a zirconium alloy cladding tube, the flow rate of the argon gas in the tube is controlled to regulate and control the tube wall temperature, parameters such as bias voltage, target-substrate distance, sputtering pressure and the like are comprehensively controlled to obtain a pure Cr near-equiaxed crystal coating on the surface of the zirconium alloy with three-layer gradient structure grains. The coating has good toughness and can improve the high-temperature oxidation resistance of the zirconium alloy cladding, significantly enhancing the ability of the cladding to resist serious accidents of the reactor.

The application provides a cutter coating and a preparation method and application thereof, and belongs to the technical field of numerical control cutters. After the cutter is etched and cleaned by a gas ion source method, a metal primer layer, a diamond-like layer, a bonding layer and an oxide heat insulation layer are sequentially deposited on the surface of the cutter by a high-power pulsed magnetron sputtering technology. The high-pulse magnetron sputtering technology is used for preparing the cutter coating, and the high-pulse magnetron sputtering technology has the characteristics of high atomic ionization rate and less liquid droplet agglomeration, so that the coating formed by film forming has few defects, high compactness and high hardness; after the oxide layer on the surface of the cutter is removed by the gas ion source, the metal primer layer is used as a transition layer, and the adhesion between the cutter and the coating can be improved. The oxide heat insulation layer is used for protecting the diamond-like layer from graphitization and failure in the milling process, and the high-temperature resistance is excellent.

The invention provides an amorphous-nanocrystalline composite structure high-entropy nitride film and a preparation method thereof, and relates to the technical field of film materials. A multi-arc ion plating technology and a high-power pulse magnetron sputtering technology are adopted, and the (Ti / TiN...) / (nc-HEAN / a-Si3N4) multi-layer nano composite structure high-entropy film is prepared by regulating and controlling the composition proportion and the structure. The nano-multilayer structure has the advantages that the crack deflects at an interface, the tip of the crack at the interface is passivated, and microcrack initiation and propagation caused by stress concentration are prevented. The nanocrystalline nc-HEAN high-entropy nitride is embedded in the amorphous a-Si3N4, so that a nanocrystalline / amorphous multiphase composite structure is formed. By means of a nano multilayer structure and a nanocrystalline / amorphous multiphase composite structure, the multilayer nano composite high-entropy nitride film with high hardness / high toughness is prepared so as to meet the high-performance application requirements of the modern industrial technology on cutters and grinding tools.

The invention provides a device and a method for preparing a high-purity astatine-211 composite target material in batches, and relates to the technical field of medical radioisotope production and thin targets. The device comprises a vacuum chamber; the sputtering cathode is arranged in the vacuum chamber and is connected with a high-power pulse magnetron sputtering power supply; the polyhedral sample support is arranged in the vacuum chamber, the polyhedral sample support and the vacuum chamber are rotatably arranged, the polyhedral sample support is arranged above the sputtering cathode, each side face of the polyhedral sample support is provided with a plurality of installation positions used for installing target substrates, and the polyhedral sample support is connected with a radio frequency bias power supply; and the rotary driving unit is used for driving the polyhedral sample holder to rotate. According to the astatine-211 target material and the preparation method thereof, on the premise of ensuring that the performance of the target material meets high-power beam irradiation and subsequent process requirements, the material utilization rate and the production efficiency are remarkably improved, and large-scale and economical preparation and application of the astatine-211 target material are promoted.

The invention relates to a semiconductor nitride film material and a preparation method thereof, and belongs to the technical field of semiconductor film materials. The semiconductor nitride thin film material comprises the following components: a compound with a chemical formula of Al < 1-x > Si < x > N < 1-y > O < y >, the compound is a hexagonal system, and the crystal space group is P63mc. The preparation method of the semiconductor nitride thin film material comprises the following steps: cleaning a substrate; according to the method, Al or Al and Si are used as a target material, the target material is sputtered in a high-power pulse magnetron sputtering mode in an argon and nitrogen mixed gas environment, and the semiconductor nitride thin film material is deposited on a substrate. The semiconductor nitride film material has excellent insulativity, thermal stability, wear resistance and hydrophobicity at the same time, and can meet application requirements in various complex environments.

The application provides a kind of aluminum alloy die-casting die's isomorphic modulus multilayer protective coating and its preparation method, the protective coating is composed of matrix, adhesive layer, TiN transition layer, isomorphic support layer, TiAlSiN transition layer and corrosion-resistant functional layer.The preparation method comprises: (1) sample surface pretreatment; (2) glow cleaning; (3) Ti layer deposition; (4) TiN transition layer deposition; (5) TiN layer deposition; (7) high / low modulus TiAlSiN layer deposition.The application has reasonable concept, adopts high-power pulse magnetron sputtering technology to prepare modulus multilayer composite functional coating, plays the role of single-layer coating and the synergistic effect of multilayer coating, integrates high bonding force, high hardness and toughness and corrosion resistance, and obtains a kind of multifunctional composite coating with strong resistance to impact or corrosion, high hardness and toughness, thereby significantly improving the service life of the die.

The invention belongs to the field of protective coatings, and relates to an in-situ self-strengthening double-phase coating based on a multi-element amorphous precursor and a preparation method and application of the in-situ self-strengthening double-phase coating. Multi-component refractory alloy targets, graphite targets and Si-Al composite targets are co-sputtered through high-power pulse magnetron sputtering and radio frequency magnetron sputtering technologies, and the prepared coating is smooth and compact in surface and shows an amorphous structure. Elements such as C, Si and Al are introduced into refractory high-entropy alloy elements, in the high-temperature service process, a high-entropy M3SiC2 and Cr3Si double-phase nano structure is formed in the coating in situ, and meanwhile a Al2O3 and (Cr, Al) 2O3 multi-layer oxidation layer is formed on the surface. According to the in-situ transformation structural characteristic, the Zr alloy can be effectively prevented from being oxidized in a 1200 DEG C water vapor environment for 2 h and a 1300 DEG C water vapor environment for 60 min, excellent corrosion resistance and abrasion resistance are achieved, and a theoretical basis is provided for prolonging the service life of the fuel cladding zirconium alloy in a nuclear reactor.

The invention discloses an AI high-frequency high-speed electronic substrate-oriented ion beam composite regulation and control method, and relates to the technical field of semiconductor manufacturing and electronic packaging. Comprising the following steps: (1) carrying out ion implantation modification on the surface of a base material; (2) depositing and bonding a seed crystal layer by a magnetic filtering cathode vacuum arc; (3) depositing an ultralow-profile initial conductor layer through high-power pulse magnetron sputtering; (4) performing pulse electroplating to thicken the conductor; and (5) surface ion beam polishing. Through the dual effects of ion beam deposition and polishing, a conductor circuit with an extremely smooth surface is manufactured, the conductor loss of a millimeter wave frequency band is remarkably reduced, the dielectric property is improved by combining ion implantation, so that the insertion loss in a 50-60GHz frequency band can be stably controlled at-1.1 dB / inch or lower, and international leading technical indexes are benchmarked and even exceeded.

The application provides a laser discharge cavity inner surface coating and a preparation method thereof, and belongs to the technical field of plating. The method comprises the following steps: step S1, high-power pulse magnetron sputtering deposition plating is performed on a pretreated discharge cavity base material by using a NiCrAlHf alloy target, to obtain a discharge cavity base material after bottom layer plating; step S2, polystyrene microspheres are sprayed on the surface of the discharge cavity base material after bottom layer plating, and high-power pulse magnetron sputtering gradient plating is performed on the discharge cavity base material after bottom layer plating by using a NiCrAlHf alloy target and a yttrium oxide target, and then vacuum annealing treatment is performed, to obtain a discharge cavity base material after gradient plating; step S3, high-power pulse magnetron sputtering deposition plating is performed on the discharge cavity base material after gradient plating by using a yttrium oxide target, to obtain a discharge cavity base material after top layer plating, and then vacuum annealing treatment is performed, to obtain a laser discharge cavity inner surface coating. The application can achieve the purposes of erosion resistance and non-falling of the laser discharge cavity inner surface coating.

The application discloses a Ti3SiC2 MAX phase coating and a preparation method thereof. The preparation method comprises the following steps: depositing a Ti-Si transition layer on the surface of a substrate by using a high-power pulsed magnetron sputtering technology; introducing a carbon hydride; alternately depositing a Ti-Si coating and a Ti-Si-C coating, and the number of times of the alternately depositing is 2-8 times; and performing vacuum annealing treatment on the prepared coating to obtain the Ti3SiC2 MAX phase coating. The Ti-Si coating and the Ti-Si-C coating are alternately deposited by using the high-power pulsed magnetron sputtering technology, the deposited coating can be phase formed at a lower temperature in the subsequent heat treatment process, the generation of impurity phases can be reduced, and the purity of the MAX phase is improved.

This invention discloses a corrosion-resistant conductive thin film on the surface of a stainless steel bipolar plate and its preparation method. The method employs high-power pulsed magnetron sputtering technology and includes steps such as substrate pretreatment, argon ion cleaning, Ti transition layer sputtering, and reactive sputtering of the Ti4O7 layer. This invention has a wide process window; by adjusting process parameters, a dense, strongly adherent Ti4O7 thin film with both high corrosion resistance and conductivity can be prepared at room temperature. This film is suitable for surface modification of bipolar plates in high-performance proton exchange membrane fuel cells.

The application discloses an indium gallium zinc oxide thin film and a preparation method and a TFT device thereof, and the preparation method is based on a high-power pulse magnetron sputtering technology, and the mole ratio of a target material used for sputtering is In2O3:Ga2O3:ZnO=1.8±0.2:1.4±0.2:1±0.2. The application increases the proportion of indium elements in the target material to improve the thin film mobility, and increases the proportion of gallium elements to inhibit oxygen vacancies, so as to reduce the carrier concentration.

The present invention relates to a method for treating a porous transport layer, which comprises: - providing a porous transport layer having an oxide layer, - depositing a metal on the porous transport layer using a physical vapor deposition process, wherein the physical vapor deposition process is a High-Power Impulse Magnetron Sputtering Deposition (HiPIMS-D) process thus forming a coating layer on the porous transport layer to obtain a coated porous transport layer, or wherein the physical vapor deposition process is a High-Power Impulse Magnetron Sputtering-Metal Ion Etching (HiPIMS-MIE) process thus forming an etching metal layer on the porous transport layer, wherein the HiPIMS-MIE process further comprises: - removing at least partly native oxides from the native oxide layer thus forming an interfacial layer of the porous transport layer.

The invention relates to the technical field of physical vapor deposition, and discloses a high-power-density magnetron sputtering system and method for a liquid target material, and the system comprises a liquid target sputtering module which is used for containing and heating the target material and generating high-power pulse magnetron sputtering plasma; the temperature monitoring module is used for monitoring temperature distribution on the surface of the target; the state monitoring module is used for monitoring the surface appearance and the liquid level state of the target material in real time; the central control unit is respectively connected with the liquid target sputtering module, the temperature monitoring module and the state monitoring module, and is used for adjusting the heating power and sputtering process parameters of the liquid target sputtering module according to the received temperature and state data; and the man-machine interaction interface is connected with the central control unit and is used for setting parameters and displaying data. By means of real-time temperature and state feedback, accurate closed-loop control over the liquid target is achieved, temperature drift and state out-of-control under traditional open-loop control are avoided, and the stability and repeatability of the process are greatly improved.

The application relates to the field of coating preparation and discloses a preparation method of a corrosion-resistant coating of an electronic component in a marine environment, which comprises the following steps: S1: ion implantation mixed layer: ion implantation technology is used to combine a layer on the surface of the prepared component, the implanted elements are Cu, Ni, Cr and Ag metal elements, a uniform and strongly combined mixed layer is formed on the surface of the electronic component by implanting the Cu, Ni, Cr and Ag metal elements, and the combination strength and compactness of the coating can be greatly improved by forming a dense film on the substrate by using high-power pulse magnetron sputtering technology; on the basis, a conductive layer is prepared by high-power magnetron and a corrosion-resistant layer is deposited by high-power pulse magnetron sputtering technology, the coating prepared by the method has strong combination strength and corrosion resistance, and the quality of the electronic component is not affected by the problems of high deposition temperature of multi-arc ion plating, large particles in the film forming process and the like.

The invention discloses a hydrophobic coating and a preparation method thereof, and relates to the technical field of optical functional coatings. The preparation method of the hydrophobic coating comprises the following steps: providing a substrate; in a vacuum environment, performing bombardment cleaning on the surface of the matrix by adopting an ion beam generated by an ion source; depositing a titanium transition layer on the surface of the substrate by adopting a high-power pulse magnetron sputtering technology; a first oxide layer and a second oxide layer are alternately deposited on the titanium transition layer through the high-power pulse magnetron sputtering technology, the refractive index of the first oxide layer is higher than that of the second oxide layer, and a multi-layer film structure is formed; a high-power pulse magnetron sputtering silicon target is adopted to provide a silicon source, meanwhile, an organic silicon precursor is introduced into a reaction area on the surface of a base body, plasma is generated through an ion source for enhancement, and a hydrophobic layer is deposited on the top of the multi-layer film structure. The hydrophobic coating prepared by the preparation method can realize large-area uniform deposition under a low-temperature condition, and meanwhile, the coating has hydrophobicity and an anti-reflection function aiming at an ultraviolet band.

A method for forming a coating on a substrate formed from zinc sulfide (ZnS) is provided. A ZnS film is grown on the substrate with a radio frequency sputtering process and metal dopants are sputtered on the substrate with a high-power impulse magnetron sputtering process. The metal dopants can be molybdenum or tungsten and simultaneously sputtered while growing the ZnS film. The sputtering ionizes the coating where the coating has a sheet resistance that is less than 50 ohm / square and the metal dopants form n-type dopants in the ZnS film. The metal dopants can be formed at a concentration that varies with a thickness of the ZnS film. At a first thickness, the concentration is at a first concentration and at a second thickness greater than the first thickness, the concentration is at a second concentration less than the first concentration.

The invention belongs to the technical field of electronic components, and particularly relates to a ceramic piezoresistor and a preparation method and application thereof. The ceramic varistor comprises a ceramic substrate and a copper-based electrode formed on the surface of the ceramic substrate, the copper-based electrode comprises a metal transition layer, a copper layer, an aluminum layer, a DLC layer and a resin layer which are sequentially arranged on the ceramic substrate, and the ceramic varistor is specifically prepared by the following steps: firstly, preparing the metal transition layer on the substrate through a direct current magnetron sputtering coating process; preparing a copper layer and an aluminum layer in sequence through a high-power pulse magnetron sputtering process, preparing a DLC surface layer on the surface of the aluminum layer by adopting a plasma enhanced chemical vapor deposition technology, and finally coating the DLC layer with a resin layer. All the layers are matched with one another, so that the obtained ceramic varistor finally realizes collaborative optimization of various performances.

The invention relates to a method for manufacturing a part (15) for an aircraft propulsion assembly, the method comprising the following sequential steps: (a) providing a body (16) made of composite material comprising fibers embedded in a polymer matrix, (c) depositing a coating (17) onto the body (16), characterized in that step (c) comprises the following substeps: (d) depositing a bonding layer (18) onto the body (16) by magnetron sputtering in a high-power pulse regime, and (e) depositing a functional layer (19) onto the bonding layer (18) by thermal spraying. (Shorthand figure: Figure 2)

The invention provides a long-distance zirconium alloy cladding surface uniform coating, a preparation method and application, the method comprises the following steps: cleaning and drying a zirconium alloy cladding substrate, then putting the zirconium alloy cladding substrate into a vacuum chamber in magnetron sputtering equipment, and adjusting the vacuum degree and air pressure of the vacuum chamber; bombarding the surface of the zirconium alloy cladding matrix through high-speed argon ions by using a bias power supply to carry out glow cleaning; the surface of a metal target is bombarded through argon ions so that the metal target can be sputtered and deposited on the surface of the zirconium alloy cladding base body to form a metal coating; the sputtering reaction conditions comprise that in the process of depositing the metal coating, the argon ion flux of the middle section is 5%-10% higher than that of the upper section; and the argon ion flux of the lower section is 5-15% higher than that of the middle section. Through the high-power pulse magnetron sputtering process, the coating thickness distribution of the long-distance full-size zirconium alloy cladding tube is adjusted by adjusting the magnetron sputtering gas flow distribution, and the coating has more excellent uniformity.

The invention discloses a composite target material for producing high-purity astatine-211 for inhibiting substrate activation as well as a design method and a preparation method of the composite target material, and belongs to the technical field of medical radioactive isotope production. The composite target material comprises a metal substrate, and a chromium layer, a gold layer and a bismuth layer which are sequentially laminated on the surface of the metal substrate. The chromium-gold-bismuth gradient multi-layer structure is introduced, and the three technical problems that a traditional bismuth-aluminum target material is prone to melting under high-beam irradiation, interface mutual diffusion is serious, and a substrate is prone to being activated to generate radioactive impurities are cooperatively solved. The invention further provides a target material thickness design method based on physical simulation and a preparation method comprising a high-power pulse magnetron sputtering key process, the method has the advantages of being stable in process, controllable in cost and suitable for large-scale production, and a reliable solution is provided for efficient, high-purity and commercial production of the medical astatine-211.

The application discloses a (110) plane preferred orientation MAX phase coating and a preparation method and application thereof. The preparation method comprises the following steps: adopting a double-target high-power pulse magnetron sputtering combined with a synchronous pulse bias technology, taking a metal target and a C target as target materials, and making the magnetic field between the metal target and the C target be a closed magnetic field with opposite magnet polarities or a mirror magnetic field with the same magnet polarities, so as to deposit the (110) plane preferred orientation MAX phase coating on the surface of a substrate; and the metal target is selected from a TiAl target, a CrAl target or a VAl target. The MAX phase coating provided by the application has the advantages of low deposition temperature, high purity, smooth surface, uniform composition, dense structure and the like, and has a good application prospect in the field of high-temperature oxidation resistance or corrosion resistance protection.

The invention discloses an AlTiMoVN multi-element self-lubricating coating as well as a preparation method and application thereof. The preparation method comprises the following process steps: S1, ultrasonically cleaning a substrate; s2, the substrate is loaded to a sample holder and placed in a coating chamber, the temperature of the coating chamber is set to be 25-500 DEG C, and the vacuum degree of the coating chamber is set to be 1.0 * 10 <-3 >-1.0 * 10 <-4 > Pa; s3, inert gas and nitrogen are introduced into the coating chamber, the flow ratio of the inert gas to the nitrogen is 1: 1-5: 1, the vacuum degree is set to be 0.5-1.0 Pa, and the bias voltage is set to be 0-200 V; and S4, a high-power pulse magnetron sputtering power source is started, a target material is an AlTiMoV target, the power of the target material is set to be 1-9 kW, the duty ratio is set to be 10%-50%, and the deposition time is 60-180 min. The AlTiMoVN multi-element self-lubricating coating is obtained by deposition according to the preparation method disclosed by the invention. The AlTiMoVN multi-element self-lubricating coating can be applied to a cutter coating or a surface lubricating coating.

The present application belongs to the technical field of cutting tool surface coating, and discloses a hard coating for titanium alloy cutting and a preparation method and application thereof. The hard coating comprises a bottom layer and a top layer. The bottom layer is a W bottom layer or a W-N bottom layer, and the top layer is a W top layer or a W-N top layer. The thickness of the hard coating is 2.0-2.5 μm, wherein the thickness of the bottom layer is 0.3-0.6 μm, and the thickness of the top layer is 1.5-2.0 μm. The elements in the hard coating are tungsten 80-100 at. % and nitrogen 0-20 at. %. The coating is deposited by high-power pulsed magnetron sputtering. The coating has good hardness and good oxidation resistance, prolongs the service life of the coated tool in titanium alloy machining, and still shows excellent titanium alloy cutting performance under dry machining conditions.

A quantum detector is provided with a vertically stacked structure. The detector comprises a conductive substrate, a plurality of quantum detectors configured on the conductive substrate, and a lower electrode. Each of the quantum detectors comprises an electron transport layer (GaAs), a three-dimensional topological insulator layer (Sb-doping Bi2Te3), a light-absorbing layer (e.g. having excellent graphene quantum dot (ZnO)), and an upper electrode. The lower electrode is disposed between first and second upper electrodes of the first and second quantum detectors that are adjacent to each other to provide a vertical series of electrical coupling. Thus, the present invention provides a novel photodetector with a vertical structure. With the preparation of a topological material through high-power impulsed magnetron sputtering (having a special surface state of an extremely-low energy gap), the mobility of electron-hole-pair carriers is effectively improved. The whole device achieves low energy consumption and extended use life.