42results about How to "Guaranteed deposition rate" patented technology

The invention relates to an ionization-rate-controllable coating device based on high-power impulse magnetron sputtering, which comprises a vacuum sputtering system, a low-voltage direct-current power system, a high-voltage impulse power system, a PLC (Programmable Logic Controller) central control system and a computer, wherein the low-voltage direct-current power system provides a low-voltage current for the vacuum system, and the high-voltage impulse power system provides a high-voltage impulse current for the vacuum system; the PLC central control system is used for controlling the vacuum system, low-voltage direct-current power system and high-voltage impulse power system; and the PLC and computer are used for transmitting and controlling data. The invention effectively shortens the delay time of the impulse current due to the preset direct-current voltage, effectively ensures the film deposition rate by coupling the direct-current magnetron sputtering, and establishes a plasma ionization-rate-adjustable HIPIMS (high-power impulse magnetron sputtering) technique, thereby providing technical support for research in related science.

The invention provides a rectangular plane cathode arc source and a cathode target material ablation device. The rectangular plane cathode arc source comprises an electromagnetic coil, a central permanent magnet group, and a peripheral permanent magnet group which is opposite to the central permanent magnet group in polarity, wherein the central permanent magnet group is arranged at the center of the electromagnetic coil; the peripheral permanent magnet group is arranged at the periphery of the electromagnetic coil. By adopting the rectangular plane cathode arc source and the cathode target material ablation device provided by the invention, the utilization rate and the deposition rate of the cathode target material can be ensured simultaneously when the quality of the prepared coating is improved.

The invention provides a multi-stage magnetic field arc ion plating and radio-frequency magnetron sputtering composite deposition method and belongs to the technical field of material surface processing. The method aims to solve the problem that low-melting-point pure metal or multicomponent alloy materials and non-metal materials, such as graphite are large in particle in traditional arc ion plating, breaking through the limitations that semiconductor materials and insulating materials can not be used, the ionization rate and thin film deposition efficiency of traditional magnetron sputtering are low and high- melting-point targets are difficult to ionize, and eliminating the limitations of an original method in the aspect of use of the targets. The composite deposition method includes the steps that 1, a workpiece to be plated is placed on a sample table in a vacuum room, and a relative power source is powered on; 2, a thin film is deposited, wherein when the vacuum degree in the vacuum room is smaller than 10-4Pa, work gas is introduced, gas pressure is adjusted, a plating power source is powered on, and energy of a composite plasma is adjusted through a grid bias power supply. By means of a multi-stage magnetic field straight tube magnetic filter device, the defect of large particles is overcome, transmission efficiency of arc plasmas is guaranteed, and required process parameters are set for thin film deposition.

The embodiment of the invention discloses a composite modification method for surface protection of a neodymium iron boron magnet, which comprises the steps of carrying out pretreatment on the neodymium iron boron magnet; placing the magnet in a workpiece rest of a vacuum chamber, and extracting the air of the vacuum chamber; providing negative bias voltage to the workpiece rest through an external power supply, and completing glow cleaning for the magnet; providing negative bias voltage to an Al target material through a high-power pulse magnetron sputtering power supply to generate high-density Al plasmas, providing negative high voltage to the workpiece rest through the external power supply, and matching the pulse waveforms to complete the Al plasma immersion ion implantation and deposition process of the workpiece; providing negative bias voltage to the Al target material through a single-pole pulse magnetron sputtering power supply, and providing negative bias voltage to the workpiece rest through the external power supply so as to deposit an Al film on the surface of the workpiece; and repeating the processes of magnetron sputtering and plasma immersion ion implantation anddeposition to obtain a composite modified coating on the substrate surface of the workpiece, so that the corrosion resistance of the surface of the neodymium iron boron magnet is improved.

The invention discloses a multistage magnetic field ion plating and twin-target high-power pulse magnetron sputtering composite method and belongs to the technical field of material surface treatment. The problems that low-melting-point pure metal (such as aluminum) or multi-component alloy materials (such as aluminum and silicon) and non-metallic materials (such as graphite and semiconducting material silicon) have the micro-particle defect in a traditional arc ion plating method, a common magnetron sputtering technology is low in ionization rate and thin film deposition efficiency, the melting point is high, a target material difficult to ionize has using limitations, and high-power pulse magnetron sputtering discharge is unstable in ignition are solved. The multistage magnetic field ion plating and twin-target high-power pulse magnetron sputtering composite method comprises the steps that 1, a workpiece is placed on a sample stage inside a vacuum chamber and connected with related equipment; and 2, thin film deposition is conducted, specifically, vacuumizing is conducted till the pressure reaches 10-4 Pa, then, working gas is injected, a film plating power source is turned on, the energy of composite plasma is adjusted through a bias power source, the micro-particle defect is eliminated through a multistage magnetic field filtering device, the transmission efficiency of the arc plasma is ensured, and the arc plasma and twin targets are combined to produce high-ionization-rate multi-component plasma, and a thin film is prepared.

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining special-shaped tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a target source of arc ion plating, a multistage magnetic field device, a lining bias voltage special-shaped tube and porous baffle combination device, a movable coil device, a high power pulsed magnetron sputtering target source and relevant power supply, a waveform matching device, a bias voltage power supply, and the like;and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4>Pa, a platingpower supply is turned on, the bias voltage power supply regulates energy of the plasma, the combination magnetic field and the lining special-shaped tube and porous baffle device eliminate large particle defects and guide transmission of the composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

The invention discloses a combined magnetic field and lining bias voltage conical pipe composite vacuum deposition method, belongs to the technical field of material surface treatment, and aims at solving the problems about film pollution through large particles, the target material usage limit, magnetic filter arc plasma losses, unstable high-power pulse magnetron sputtering discharge and the like in arc ion plating. The device comprises a bias voltage power source, an arc ion plating target source and power source, a multi-level magnetic field device and power source, a lining bias voltage conical pipe device and bias voltage power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Film deposition is conducted, device connection is conducted, the system is started, and when the vacuum degree in a vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coating power source is started, and the bias voltage power source adjusts plasma energy; and the multi-level magnetic field device and the movable coil device eliminate large particle defects andguiding composite plasma transmission, losses in the vacuum chamber are reduced, and preparing technology parameters are set.

The invention relates to a combined magnetic field, combined tube and perforated baffle composite vacuum film coating method, and belongs to the technical field of material surface treatment. The problems ofcontamination of thin films by large particles and using limiting of target materials in arc ion plating, loss of magnetically filtered arc plasmaand unstable high power pulsed magnetron sputtering discharging. A device of the method comprises an arc ion plating target source, a multistage magnetic field, a lining bias voltage tapered tube, straight tube and perforated baffle combination device, a twin target high power pulse magnetron sputtering target source, a movable coil device and relative power supply, a grid bias power supply, a waveform matching device and the like; thin film deposition comprises the steps that devices are connected, the system is started, when the vacuum degree of the vacuum cavity is smaller than 10-4 Pa, a working gas is introduced, a film plating powersupply is opened, energy of an arc plasma is adjusted by using the grid bias power supply, through the multistage magnetic field device and the movable coil device, the large particle defect in the arc plasma is eliminated, and the transportation of the composite plasma is guided, loss in the vacuum cavity is reduced, andtechnology parameters are set.

The invention discloses a composite deposition method combined magnetic field arc ion plating and high-power pulse magnetron sputtering, and belongs to the technical field of material surface treatment. The problems such as pollution of macroparticles to thin films and the use limitation of target materials in the arc ion plating, and the losses of arc plasmas and the instability of high-power pulse magnetron sputtering discharge in the transmission process of a magnetic filter device are solved. Devices relating to the composite deposition method combined the magnetic field arc ion plating and the high-power pulse magnetron sputtering comprise a bias voltage power source, an arc ion plating target source, a power source of the arc ion plating target source, a multi-stage magnetic field device, a power source of the multi-stage magnetic field device, a movable coil device, a power source of the movable coil device, a waveform matching device, a high-power pulse magnetron sputtering target source, a power source of the high-power pulse magnetron sputtering target source, an oscilloscope and a vacuum chamber. The thin film deposition comprises the steps that the devices are connected, and a system is started; and when a vacuum degree in the vacuum chamber is less than 10<-4> Pa, a working gas is introduced, and a film plating power source is turned on. The bias voltage power source adjusts the energy of plasmas, the multi-stage magnetic field device and the movable coil device eliminate macroparticle defects and guide the transmission of composite plasmas, the losses in the vacuum chamber are reduced, and technological parameters are set.

The invention discloses a combined magnetic field and lining conical pipe and ladder pipe composite vacuum coating method, and belongs to the technical field of material surface treatment. The problems that during arc ion plating, due to macroparticles, a thin film is polluted, target use is limited, magnetically filtered arc plasmas are damaged, and high-power pulse magnetic control discharge isnot stable are solved. A device comprises an arc ion plating target source, a multi-stage magnetic field device, a movable coil device, a twin target high-power pulse magnetron sputtering target source, a lining bias conical pipe and ladder pipe combined device and related power source, a grid bias power supply, a waveform matching device and the like. The method comprises the steps of thin film deposition, device connecting and system starting. When the vacuum degree in a vacuum chamber is smaller than 10<-4> Pa, work gas is led in, a coating power source is started, energy of plasmas can beadjusted through the grid bias power supply, the multi-stage magnetic field device and the movable coil device remove macroparticle defects and guide transmission of composite plasmas, losses in the vacuum chamber are reduced, and process parameters are set.

The invention discloses a vacuum film plating method with a combined magnetic field, a lined straight pipe and a multihole baffle combined, and belongs to the technical field of material surface treatment. The vacuum film plating method with the combined magnetic field, the lined straight pipe and the multihole baffle combined aims to solve the problems such as the pollution of macroparticles to athin film, the use limitation of a target material, the loss of magnetically-filtered arc plasma and the instability of high-power pulsed magnetron sputtering discharge in arc ion plating. Devices relating to the vacuum film plating method comprise a bias voltage power source, an arc ion plating target source, a power source of the arc ion plating target source, a multistage magnetic field device, a power source of the multistage magnetic field device, a movable coil device, a power source of the movable coil device, a waveform matching device, a high-power pulsed magnetron sputtering targetsource, a power source of the high-power pulsed magnetron sputtering target source, a combined device of the lined bias voltage straight pipe and the multihole baffle, a power source of the combined device of the lined bias voltage straight pipe and the multihole baffle and the like. Thin film deposition comprises the steps that the devices are connected; a system is started; when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, a working gas is introduced into the vacuum chamber, a film plating power source is started, the bias voltage power source adjusts the energy of the plasma, the multistage magnetic field device and the movable coil device eliminate defects of the macroparticles and guide the transmission of the composite plasma, the loss in the vacuum chamber is reduced, and technical parameters are set.

The invention discloses a vacuum coating method for compounding a combined magnetic field and a lining bias-voltage straight tube, belongs to the technical field of material surface treatment, and solves the problems of the pollution of the film, the target use restriction, the loss of the magnetic filtered arc plasma and the instability of high-power pulse magnetic-controlled sputtering discharging due to the macroparticles in the arc ion plating. The vacuum coating device comprises a bias-voltage power supply, an arc ion plating target source, an arc ion plating power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lining bias-voltage straight tube device, a lining bias-voltage power supply, an movable coil device, an movable coil device power supply, a waveform matching device, a twin-target high-power pulse magnetic-controlled sputtering target source, a twin-target high-power pulse magnetic-controlled sputtering power supply and thelike. The vacuum coating method comprises the steps that the film is deposited, the device is connected, the system is started, when the vacuum degree in the vacuum chamber is less than 10 <-4>Pa, the working gas is fed, the coating power supply is started, the bias-voltage power supply adjusts the energy of the plasma, the multi-stage magnetic field device and the movable coil device eliminate the macroparticles defects and guide the transmission of the compound plasma, the loss in the vacuum chamber is reduced, and the preparation process parameters are set.

The invention provides a vacuum film-coating method through a combined magnetic field and compounding of a lining special-shaped pipe and a porous baffle, and belongs to the technical field of material surface treatment. The vacuum film-coating method is used for solving the problems of pollution of large particles to a film, target using limitation, loss of magnetic filtration arc plasma, instability of high-power pulse magnetron sputtering discharge and the like in arc ion plating. A device adopted by the vacuum film-coating method comprises an arc ion plating target source, a multi-stage magnetic field device, a lining bias-voltage special-shaped pipe and multi-porous baffle combination device, a movable coil device, a twin target high-power pulse magnetron sputtering target source andrelated power supply, a waveform matching device, a grid bias power supply and the like. Film deposition is conducted, specifically, the device is connected, a system is started, when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, working gas is introduced, a film-coating power supply is started, energy of the plasma is adjusted through the grid bias power supply, the combined magnetic field, the lining special-shaped pipe and a porous baffle device eliminate the defects of the large particles and guide transmission of the compound plasma, loss of the plasma in the vacuum chamber is reduced, and preparation process parameters are set.

The invention discloses a combination magnetic field and lining tapered tube-porous baffle compounded vacuum deposition method, and belongs to the technical field of material surface treatment. In order to solve the problems of pollution to thin films by macroparticles in arc ion plating, target material using restrictions, magnetic filtration arc plasma losses, high-power pulse magnetron sputtering discharge instability and the like, the device disclosed in the invention comprises a grid bias power source, an arc ion plating target source and power source, a multistage magnetic field device and power source, a lining bias tapered tube and porous baffle combination device and power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Thin film deposition is conducted, the devices are connected and the system is started. When the vacuum degree of the inside of a vacuum chamber is smaller than 10<-4>Pa, working gas is connected in, a film coating power source is started, the grid bias power source can adjust the energy of plasma, the combination device can remove macroparticle defects and guide composite plasma conveyance, losses in the vacuum chamber are reduced and technological parameters are set.

The invention discloses a vacuum coating method for compounding a combined magnetic field and a lining bias-voltage tapered tube, belongs to the technical field of material surface treatment, and solves the problems of the pollution of the film, the target use restriction, the loss of the magnetic filtered arc plasma and the instability of high-power pulse magnetic-controlled sputtering discharging due to macroparticles in the arc ion plating. The vacuum coating device comprises a bias-voltage power supply, an arc ion plating target source, an arc ion plating power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lining bias-voltage tapered tube device, a lining bias-voltage power supply, an movable coil device, an movable coil device power supply, a waveform matching device, a twin-target high-power pulse magnetic-controlled sputtering target source, a twin-target high-power pulse magnetic-controlled sputtering power supply and the like.The vacuum coating method comprises the steps that the film is deposited, the device is connected, the system is started, when the vacuum degree in the vacuum chamber is less than 10 <-4>Pa, the working gas is fed, the coating power supply is started, the bias-voltage power supply adjusts the energy of the plasma, the multi-stage magnetic field device and the movable coil device eliminate the macroparticles defects and guide the transmission of the compound plasma, the loss in the vacuum chamber is reduced, and the preparation process parameters are set.

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining stepped tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a bias voltage power supply, an arc ion plating target source and power supply, a multistage magnetic field device and power supply, alining bias voltage stepped tube and porous baffle device and power supply, a movable coil device and power supply, a waveform matching device, a high power pulse magnetron sputtering target source and power sully, and other devices; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamberis less than 10<-4> Pa, a plating power supply is turned on, the bias voltage power supply regulates energy of plasma, the multistage magnetic field device and movable coil device eliminate large particle defects and guide transmission of composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

The invention provides a combined magnetic field and lining porous baffle combined vacuum deposition method and belongs to the technical field of material surface treatment. The combined magnetic field and lining porous baffle combined vacuum deposition method is provided for solving the problems of pollution of big particles to films, using restriction to target materials, losses of magnetic filtered electric arc plasmas, unstable discharge of high-power pulse magnetron sputtering and the like during arc ion plating. A device adopted in the method comprises a bias power supply, an arc ion plating target source, an arc ion plating power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lining bias voltage porous baffle device, a lining bias power supply, a movable coil device, a movable coil device power supply, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering powersupply and the like. The method comprises the steps of depositing a film, connecting the device, starting the system, introducing working gas when the internal vacuum degree of a vacuum chamber is less than 10<-4> Pa, starting a film plating power supply, conducting adjustment on energy of plasmas through the bias power supply, eliminating big particle defects and guiding transmission of the plasmas through the multi-stage magnetic field device and the movable coil device, reducing loss in the vacuum chamber, and setting parameters of the preparation process.

The invention discloses a vacuum film plating method with a combined magnetic field, a lined cone-shaped tube and a multihole baffle combined, and belongs to the technical field of material surface treatment. The vacuum film plating method with the combined magnetic field, the lined cone-shaped tube and the multihole baffle combined aims to solve the problems such as the pollution of macroparticles to a thin film, the use limitation of a target material, the loss of magnetically-filtered arc plasma and the instability of high-power pulsed magnetron sputtering discharge in arc ion plating. Devices relating to the vacuum film plating method comprise a bias voltage power source, an arc ion plating target source, a power source of the arc ion plating target source, a multistage magnetic fielddevice, a power source of the multistage magnetic field device, a combined device of the lined bias voltage cone-shaped tube and the multihole baffle, a power source of the combined device of the lined bias voltage cone-shaped tube and the multihole baffle, a movable coil device, a power source of the movable coil device, a waveform matching device, a twin target high-power pulsed magnetron sputtering target source, a power source of the twin target high-power pulsed magnetron sputtering target source and the like. Thin film deposition comprises the steps that the devices are connected; a system is started; when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, a working gas is introduced into the vacuum chamber, a film plating power source is started, the bias voltage power source adjusts the energy of the plasma, the combined device eliminates defects of the macroparticles and guides the transmission of the composite plasma, the loss in the vacuum chamber is reduced, andtechnical parameters are set.

The invention discloses a movable magnetic field arc ion plating and twin target high-power pulse magnetron sputtering method, belongs to the technical field of material surface treatment, and aims atsolving the problems about film pollution through large particles in arc ion plating, the target material usage limit, arc plasma losses in the magnetic filter device transmission process, unstable high-power pulse magnetron sputtering discharge and the like. The device comprises a bias voltage power source, an arc ion plating target source and power source, a movable coil device and power source, a waveform matching device, a twin target high-power pulse magnetron sputtering target source and power source, an oscilloscope and a vacuum chamber. Film deposition is conducted, device connectionis conducted, the system is started, and when the vacuum degree in the vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coating power source is started, and the bias voltage power source is utilized for adjusting arc plasma energy; and the movable coil device is used for eliminating large particle defects and guiding the composite plasma transmission path, losses in the vacuum chamber are reduced, and technology parameters are set for film preparing.

The invention provides a combined magnetic field arc ion plating and twin-target high-power pulse magnetron sputtering method, and belongs to the technical field of material surface treatment. The method aims at solving the problems of contamination of large particles in arc ion plating to thin films, the use limitations of target materials, losses of magnetic filtering on arc plasma, the instability of high-power pulse magnetron sputtering and the like. A device comprises a bias power source, an arc ion plating target source, an arc ion plating target source power source, a multi-stage magnetic field device, a multi-stage magnetic field device power source, a movable coil device, a movable coil device power source, a waveform matching device, a twin-target high-power pulse magnetron sputtering target source, a twin-target high-power pulse magnetron sputtering target source power source, an oscilloscope and a vacuum chamber. The thin films are deposited, wherein the device is connected, a system is started, when the vacuum degree in the vacuum chamber is smaller than 10-4 Pa, working gas is introduced, a plating power source is switched on, the bias power source is used for adjusting energy of arc plasma, large particle defects are eliminated and transmitting of the composite plasma is guided through the multi-stage magnetic field device and the movable coil device, losses in the vacuum chamber are reduced, and preparation process parameters are set.

The invention discloses a combined magnetic field and lining bias voltage straight pipe composite vacuum deposition method, belongs to the technical field of material surface treatment, and aims at solving the problems about film pollution through large particles, the target material usage limit, magnetic filter arc plasma losses, unstable high-power pulse magnetron sputtering discharge and the like in arc ion plating. The device comprises a bias voltage power source, an arc ion plating target source and power source, a multi-level magnetic field device and power source, a lining bias voltagestraight pipe device and power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Film deposition is conducted, device connection is conducted, the system is started, and when the vacuum degree in a vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coatingpower source is started, and the bias voltage power source adjusts plasma energy; and the multi-level magnetic field device and the movable coil device eliminate large particle defects and guiding composite plasma transmission, losses in the vacuum chamber are reduced, and preparing technology parameters are set.

The invention discloses a filter electrode and a manufacturing method thereof. The manufacturing method of the filter electrode comprises the following steps that S1, a to-be-formed electrode terminalof a filter is treated by using a palladium sulfate activating agent, and an activation layer is formed after the surface of the silver layer of the to-be-formed electrode terminal is reacted; S2, aproduct is placed into a post-immersion liquid to react to remove residual palladium sulfate ions on the surface of the magnet of the filter; S3, the product is placed into a chemical nickel plating solution, so that nickel is deposited on the silver layer to form a nickel layer; and S4, the product is placed into a second chemical plating solution, and a second metal layer is formed on the nickellayer. Before the chemical nickel plating is performed, the product is placed in the post-immersion liquid to react to remove the residual palladium sulfate ions on the surface of the magnet of the filter, and then chemical nickel plating is performed, therefore, the situation that a nickel plating layer is deposited on the magnet when chemical nickel plating is performed can be avoided or significantly reduced, the manufacturing method of the filter electrode is beneficial to making electrodes with uniform plating thickness, excellent welding performance and high reliability, and the productperformance is improved.

A gas introduction device according to one embodiment of the present disclosure includes: a gas feeding block disposed above a chamber, the gas feeding block including a plurality of gas channels disposed in the gas feeding block to supply gas to the chamber; a valve assembly coupled with one side surface of the gas feed block, the valve assembly including a plurality of valves for selectively opening / closing at least one of the plurality of gas channels; one end of the gas introduction pipe is coupled to the valve assembly, and the other end of the gas introduction pipe is communicated with the cavity. A buffer space is provided in at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction tube, thereby accumulating gas.

The invention discloses a high-thickness curved-surface DLC product and a preparation method and application thereof. The preparation method comprises the following steps that S1, a substrate is placed in a PVD furnace, a graphite target source and an ion source power source are started, deposition bias voltage ranging from -10 V to -100 V is applied and is increased in a gradient mode, current is adjusted to be decreased in a gradient mode from 10 A to 3 A, and deposition is performed for 50-90 hours to obtain a DLC layer containing the substrate; and S2, the product obtained in the step S1 is corroded to remove the substrate to obtain the high-thickness curved-surface DLC product. The high-thickness curved-surface DLC product has no cracking or shedding phenomenon.

The invention discloses a magnetic circuit controllable vacuum cathode arc ion source, which comprises an arc ion source shell, a cathode target seat, a cathode target and a magnet are installed in the arc ion source shell, and the cathode target is fixed on the cathode target seat; A yoke is installed on the outer wall of the source housing; the yoke is composed of a cylindrical yoke A with a top surface and a circular yoke B; the yoke B is installed inside the yoke A, and the two are in contact; the yoke A There is a free tolerance fit between the housing of the arc ion source and can slide along the housing of the arc ion source. The position of the yoke of the arc source can be adjusted. By adjusting the position of the yoke, the magnetic field strength of the cathode target surface can be adjusted, and the configuration distribution of the magnetic field on the cathode target surface can be optimized simultaneously.

The invention discloses a vacuum film plating method with a combined magnetic field, a lined bias voltage cone-shaped tube and a straight tube combined, and belongs to the technical field of materialsurface treatment. The vacuum film plating method with the combined magnetic field, the lined bias voltage cone-shaped tube and the straight tube combined aims to solve the problems such as the pollution of macroparticles to a thin film, the use limitation of a target material, the loss of magnetically-filtered arc plasma and the instability of high-power pulsed magnetron sputtering discharge in arc ion plating. Devices relating to the vacuum film plating method comprise an arc ion plating target source, a multistage magnetic field device, a combined device of the lined bias voltage cone-shaped tube and the straight tube, a twin target high-power pulsed magnetron sputtering target source, a movable coil device, related power sources, a waveform matching device, a bias voltage power source,a sample table and a vacuum chamber. Thin film deposition comprises the steps that the devices are connected; a system is started; when the vacuum degree in the vacuum chamber is less than 10<-4> Pa,a working gas is introduced into the vacuum chamber, a film plating power source is started, the bias voltage power source adjusts the energy of the plasma, the multistage magnetic field device and the movable coil device eliminate defects of the macroparticles and guide the transmission of the composite plasma, the loss in the vacuum chamber is reduced, and technical parameters are set.

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining tapered tube and a stepped tube, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a target source of arc ion plating, a multistage magnetic field device, a movable coil device, a high power pulse magnetron sputteringtarget source, a lining bias voltage tapered tube and stepped tube combination device and relevant power supply, a bias voltage power supply, a waveform matching device, and other devices; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, a plating power supply is turned on, the bias voltage power supply regulates energy of plasma, the multistage magnetic field device and movable coil device eliminate large particle defects and guide transmission of composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.