Multi-stage magnetic field arc ion plating and radio-frequency magnetron sputtering composite deposition method

A technology of radio frequency magnetron sputtering and arc ion plating, which is applied in the field of material surface treatment, can solve the problems of low film deposition efficiency and arc plasma transmission efficiency, so as to avoid large particle defects, ensure high-density continuous generation, and energy Improved effect

Pending Publication Date: 2015-10-14
魏永强
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  • Abstract
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Problems solved by technology

[0011] The purpose of the present invention is to solve the problem that the traditional arc ion plating method is easy to produce large particle defects, the magnetic filter technology causes low arc plasma transmission efficiency, and the use of low melting point pure metal or multi-element alloy materials and non-metallic materials (such as graphite) as target materials The large particles in the traditional arc ion plating method, the ionization rate of the traditional magnetron sputtering technology and the low deposition efficiency of the film, and the limitations of the use of high melting point targets, use low melting point pure metals or multi-element alloy materials and non-metallic materials ( Especially semiconductor materials and insulating materials) as the target material of radio frequency magnetron sputtering, and then use the arc ion plating method to generate continuous and stabl

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specific Embodiment approach 1

[0023] Specific implementation mode one: the following combination figure 1 and figure 2 Description of this embodiment, the device used in the multi-stage magnetic field arc ion plating and radio frequency magnetron sputtering composite deposition method in this embodiment includes a bias power supply 1, an arc power supply 2, an arc ion plating target source 3, a multi-stage magnetic field device 4, a radio frequency Magnetron sputtering power supply 5, RF magnetron sputtering target source 6, vacuum chamber 7, sample stage 8 and bias power waveform oscilloscope 9;

[0024] The method includes the following steps:

[0025]Step 1, place the workpiece to be processed on the sample stage 7 in the vacuum chamber 7, connect the workpiece to the pulse output end of the bias power supply 1, and connect the arc ion plating target source 3 installed on the vacuum chamber 7 to the output end of the arc power supply 2 ; The RF magnetron sputtering target source 6 is connected to the...

specific Embodiment approach 2

[0035] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the method also includes:

[0036] Step 3. Traditional DC magnetron sputtering, pulsed magnetron sputtering, high power pulsed magnetron sputtering, traditional arc ion plating, multi-level magnetic field arc ion plating and pulse cathode arc combined with DC bias and pulse bias can be used alone Or DC pulse composite bias for film deposition to prepare pure metal films, compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures;

[0037] In the second step, the radio frequency magnetron sputtering power supply 5 can be used to perform magnetron sputtering combined with a high-voltage pulsed bias power supply for ion implantation and deposition to improve the bonding force between the film and the substrate, and then proceed to step three to obtain a film with a certain thickness .

specific Embodiment approach 3

[0038] Embodiment 3: The difference between this embodiment and Embodiment 2 is that Steps 1 to 3 are repeated to prepare multi-layered thin films with different stress states, microstructures and element ratios, and the others are the same as Embodiment 2.

[0039] In step 2, you can first use radio frequency magnetron sputtering power supply 5 to perform magnetron sputtering combined with high voltage to perform ion implantation and deposition, improve the bonding force between the film and the substrate, then perform step 3, and then repeatedly perform steps 2 and 3, and so on , to prepare multilayer structure films with different stress states, microstructures and element ratios.

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Abstract

The invention provides a multi-stage magnetic field arc ion plating and radio-frequency magnetron sputtering composite deposition method and belongs to the technical field of material surface processing. The method aims to solve the problem that low-melting-point pure metal or multicomponent alloy materials and non-metal materials, such as graphite are large in particle in traditional arc ion plating, breaking through the limitations that semiconductor materials and insulating materials can not be used, the ionization rate and thin film deposition efficiency of traditional magnetron sputtering are low and high- melting-point targets are difficult to ionize, and eliminating the limitations of an original method in the aspect of use of the targets. The composite deposition method includes the steps that 1, a workpiece to be plated is placed on a sample table in a vacuum room, and a relative power source is powered on; 2, a thin film is deposited, wherein when the vacuum degree in the vacuum room is smaller than 10-4Pa, work gas is introduced, gas pressure is adjusted, a plating power source is powered on, and energy of a composite plasma is adjusted through a grid bias power supply. By means of a multi-stage magnetic field straight tube magnetic filter device, the defect of large particles is overcome, transmission efficiency of arc plasmas is guaranteed, and required process parameters are set for thin film deposition.

Description

technical field [0001] The invention relates to a composite deposition method of multistage magnetic field arc ion plating and radio frequency magnetron sputtering, and belongs to the technical field of material surface treatment. Background technique [0002] Arc ion plating technology can obtain almost all metal ions including carbon ions. At the same time, it has the advantages of high ionization rate, good diffraction, good film-substrate bonding force, good coating quality, high deposition efficiency and easy operation of equipment. Attention is paid to it, and it is one of the physical vapor deposition preparation technologies widely used in industry at present. It can not only be used to prepare metal protective coatings, but also realize the preparation of high-temperature ceramic coatings such as nitrides and carbides through the adjustment of process methods, and it is also used in the field of functional thin films. Arc ion plating can achieve rapid deposition of...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/35C23C14/22
Inventor 魏永强宗晓亚蒋志强吴忠振刘源
Owner 魏永强
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