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Combined magnetic field, combined tube and perforated baffle composite vacuum film coating method

A porous baffle, vacuum coating technology, applied in vacuum evaporation coating, sputtering coating, ion implantation coating and other directions, can solve the problem of unstable high-power pulsed magnetron sputtering discharge, low arc plasma transmission efficiency, Problems such as low film deposition efficiency, to achieve the effect of easy disassembly and assembly and cleaning of pollutants, avoiding pollution of the inner wall of the tube, and avoiding difficult cleaning

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias conical tube, straight tube and porous baffle combined device and the combined effect of bias electric field attraction can eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma has a high The transmission efficiency is eliminated from the multi-level magnetic field through the combination of the lined bias conical tube, the straight tube and the porous baffle device and the multi-stage magnetic field filter device, and then using the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction. The large particle defects contained in the arc plasma transmitted by the device and the liner bias conical tube, straight tube and porous baffle device, while using the movable coil device to control the combination of high-power pulse magnetron sputtering and arc ion plating The transmission direction of the plasma in the vacuum chamber realizes the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, reduces the loss of the composite plasma in the vacuum chamber, and overcomes the limitations of the vacuum chamber and the target source position or the substrate. The non-uniform film deposition problem caused by shape limitation, completely remove the large particle defects that may remain in the arc plasma transmitted from the multi-level magnetic field device and the lined bias conical tube, straight tube and porous baffle combination device, Make the surface of the workpiece adjust the ion energy under the condition of applying a negative bias voltage, use the bias electric field suppression effect on the surface of the substrate to remove large particle defects in the arc plasma, prepare continuous, dense and high-quality films, and at the same time realize the target material in the film Adding control of element content, reducing the production cost of using alloy targets, improving the transmission efficiency of plasma, increasing the deposition rate of thin films and reducing or even eliminating the adverse effects of large particle defects on thin film microstructure, continuous dense deposition and service performance, a new method is proposed. A composite vacuum coating method of combined magnetic field, combined tube and porous baffle

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  • Combined magnetic field, combined tube and perforated baffle composite vacuum film coating method

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specific Embodiment approach 1

[0025] Specific implementation mode one: the following combination Figure 1-6 Describe this embodiment, the device used in this embodiment is a combination of magnetic field, combined tube and porous baffle combined vacuum coating method includes bias power supply (1), arc power supply (2), arc ion plating target source (3), Twin target high power pulse magnetron sputtering power supply (4), twin target high power pulse magnetron sputtering target source (5), bias power supply waveform oscilloscope (6), twin target high power pulse magnetron sputtering power supply waveform oscilloscope (7), waveform synchronous matching device (8), movable coil device (9), movable coil device power supply (10), rheostat device (11), multi-level magnetic field device (12), multi-level magnetic field device power supply (13), Lined bias conical tube, straight tube and porous baffle combined device (14), lined bias power supply (15), sample stage (16) and vacuum chamber (17);

[0026] In this ...

specific Embodiment approach 2

[0044] Embodiment 2: The difference between this embodiment and Embodiment 1 is that a vacuum coating method combining a combined magnetic field, a combined tube and a porous baffle is connected, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply (5 ) adjust the multi-stage magnetic field device (12), turn on the liner bias power supply (15), adjust the bias voltage of the liner bias conical tube, straight tube and porous baffle combination device (14), turn on the movable coil device power supply (10 ) Adjust the movable coil device (9), adjust the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the twin target high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously , the period of the output pulse of the twin target high-power pulse magnetron sputtering power supply (4) is an integer multiple of the output pulse of the bias p...

specific Embodiment approach 3

[0045] Embodiment 3: The difference between this embodiment and Embodiment 1 is that a combined vacuum coating method of combined magnetic field, combined tube and porous baffle is connected, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply (5 ) adjust the multi-stage magnetic field device (12), turn on the liner bias power supply (15), adjust the bias voltage of the liner bias conical tube, straight tube and porous baffle combination device (14), turn on the movable coil device power supply (10 ) Adjust the movable coil device (9), adjust the output resistance of the rheostat device (10), and the waveform synchronous matching device (8) controls the bias power supply (1) and the twin target high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously , the twin target high-power pulse magnetron sputtering power supply (4) outputs high-power pulses and the bias pulse waveform output by the bias power supply (1) has ...

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Abstract

The invention relates to a combined magnetic field, combined tube and perforated baffle composite vacuum film coating method, and belongs to the technical field of material surface treatment. The problems ofcontamination of thin films by large particles and using limiting of target materials in arc ion plating, loss of magnetically filtered arc plasmaand unstable high power pulsed magnetron sputtering discharging. A device of the method comprises an arc ion plating target source, a multistage magnetic field, a lining bias voltage tapered tube, straight tube and perforated baffle combination device, a twin target high power pulse magnetron sputtering target source, a movable coil device and relative power supply, a grid bias power supply, a waveform matching device and the like; thin film deposition comprises the steps that devices are connected, the system is started, when the vacuum degree of the vacuum cavity is smaller than 10-4 Pa, a working gas is introduced, a film plating powersupply is opened, energy of an arc plasma is adjusted by using the grid bias power supply, through the multistage magnetic field device and the movable coil device, the large particle defect in the arc plasma is eliminated, and the transportation of the composite plasma is guided, loss in the vacuum cavity is reduced, andtechnology parameters are set.

Description

technical field [0001] The invention relates to a vacuum coating method for compounding a combined magnetic field, a combined tube and a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per unit t...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/56C23C14/35
CPCC23C14/325C23C14/564C23C14/35C23C14/3485
Inventor 魏永强王好平宗晓亚侯军兴蒋志强
Owner 魏永强
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