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Vacuum deposition method with magnetic field combining and liner bias conical pipe and straight pipe compounding

A technology of vacuum deposition and conical tube, applied in vacuum evaporation plating, ion implantation plating, coating, etc., can solve the problems of film composition pollution, large particle defects, low film deposition efficiency, etc., to ensure uniformity, The effect of improving utilization efficiency

Pending Publication Date: 2019-07-09
魏永强
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by type magnetic filter technology, limitation of target element usage and uniform ablation, thin film deposition density and defects, deposition position limitation caused by vacuum chamber space and target source layout design, workpiece shape limitation and different target In order to solve problems such as contamination of film components caused by secondary sputtering of residues in multi-level magnetic field devices, pure metals with low melting points (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and Semiconductor material Si, etc.) as the target material of high-power pulsed magnetron sputtering, and then use the arc ion plating method to realize the high melting point refractory target material to produce continuous and stable plasma with high ionization rate, combined with multi-level magnetic field filtering method and The shape constraints of the lined bias tapered tube and the straight tube combination device and the composite effect of the bias electric field attraction eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the inner tube with high transmission efficiency. The combined device of the lined bias conical tube and the straight tube and the multi-stage magnetic field filter device, and then use the combined effect of the magnetic field confinement of the movable coil device and the self-bias electric field attraction to eliminate the interference from the multi-stage magnetic field device and the lined bias conical tube. The large particle defects contained in the arc plasma transmitted by the combined device of tube and straight tube, at the same time, the movable coil device is used to control the transmission direction of the composite plasma of high-power pulse magnetron sputtering and arc ion plating in the vacuum chamber, so as to realize the The thin film deposition on the surface of the substrate workpiece at any position in the vacuum chamber and the control and adjustment of the film composition can reduce the loss of composite plasma in the vacuum chamber, overcome the problem of uneven film deposition caused by the limitation of the position of the vacuum chamber and the target source or the limitation of the shape of the substrate, and completely eliminate Large particle defects may remain in the arc plasma transmitted from the multi-stage magnetic field device and the combination device of the lined bias conical tube and straight tube, so that the surface of the workpiece can adjust the ion energy under the condition of negative bias voltage, and use The bias electric field suppression effect on the surface of the substrate removes large particle defects in the arc plasma, and prepares continuous and dense high-quality films. Transmission efficiency, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and service performance, a combination of magnetic field and lining bias tapered tube and straight tube composite is proposed Vacuum deposition method

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  • Vacuum deposition method with magnetic field combining and liner bias conical pipe and straight pipe compounding
  • Vacuum deposition method with magnetic field combining and liner bias conical pipe and straight pipe compounding
  • Vacuum deposition method with magnetic field combining and liner bias conical pipe and straight pipe compounding

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specific Embodiment approach 1

[0025] Specific implementation mode one: the following combination Figure 1-4 Describe this embodiment. In this embodiment, a vacuum deposition method in which a combined magnetic field is combined with a lined bias conical tube and a straight tube is used. The device used includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source. (3), high-power pulse magnetron sputtering power supply (4), high-power pulse magnetron sputtering target source (5), bias power supply waveform oscilloscope (6), high-power pulse magnetron sputtering power supply waveform oscilloscope (7 ), waveform synchronous matching device (8), movable coil device (9), movable coil device power supply (10), rheostat device (11), multi-stage magnetic field device (12), multi-stage magnetic field device power supply (13), lining Bias conical tube and straight tube combination device (14), lining bias power supply (15), sample stage (16) and vacuum chamber (17);

[0026] In t...

specific Embodiment approach 2

[0044] Embodiment 2: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method in which the lining bias conical tube and the straight tube are combined, the arc power supply (2) is turned on, and the multi-stage The magnetic field power supply (5) adjusts the multi-stage magnetic field device (12), turns on the lining bias power supply (15), adjusts the bias voltage of the liner bias conical tube and straight tube combination device (14), and turns on the movable coil device power supply (10 ) adjust the movable coil device (9), adjust the output resistance of the rheostat device (10), and control the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously by the waveform synchronous matching device (8). The period of the output pulse of the power pulse magnetron sputtering power supply (4) is an integer multiple of the output pulse of the bia...

specific Embodiment approach 3

[0045] Embodiment 3: The difference between this embodiment and Embodiment 1 is that a combined magnetic field is connected with a vacuum deposition method in which the lining bias conical tube and the straight tube are combined, the arc power supply (2) is turned on, and the multi-stage The magnetic field power supply (5) adjusts the multi-stage magnetic field device (12), turns on the lining bias power supply (15), adjusts the bias voltage of the liner bias conical tube and straight tube combination device (14), and turns on the movable coil device power supply (10 ) adjust the movable coil device (9), adjust the output resistance of the rheostat device (10), and control the bias power supply (1) and the high-power pulse magnetron sputtering power supply (4) to be turned on simultaneously by the waveform synchronous matching device (8). Power pulse magnetron sputtering power supply (4) outputs high-power pulses and bias voltage pulse waveform output by bias power supply (1) i...

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Abstract

The invention relates to a vacuum deposition method with magnetic field combining and liner bias conical pipe and straight pipe compounding, and belongs to the technical field of material surface treatment. In order to solve the problems of the pollution of a thin film through macroparticles in arc ion plating, the use restriction of a target material, the loss of a magnetic filtering arc plasma,the instability of high-power pulse magnetron sputtering discharge and the like, a device comprises an arc ion plating target source, a multistage magnetic field device, a liner bias conical pipe andstraight pipe combination device, a high-power pulse magnetron sputtering target source, a movable coil device, a related power supply, a waveform matching device, a grid bias power supply, a sample table and a vacuum chamber. The vacuum deposition method comprises the steps of depositing a thin film, connecting with the device, starting a system, feeding a working gas when the vacuum degree in the vacuum chamber is smaller than 10<-4> Pa, starting a coating power supply, and adjusting the energy of a plasma through the grid bias power supply. The defects of the macroparticles are eliminated and the transmission of the composite plasma is guided through the multistage magnetic field device and the movable coil device, the loss in the vacuum chamber is reduced, and process parameters are set.

Description

technical field [0001] The invention relates to a vacuum deposition method combined with a combined magnetic field and a lining bias conical tube and a straight tube, belonging to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particl...

Claims

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Application Information

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IPC IPC(8): C23C14/32C23C14/56C23C14/35
CPCC23C14/325C23C14/3485C23C14/35C23C14/564
Inventor 魏永强王好平宗晓亚蒋志强
Owner 魏永强
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