Combined magnetic field and lining biased straight pipe composite filtering arc ion plating
A technology of arc ion plating and arc plasma, which is applied in the field of material surface treatment, can solve the problems of target material uniform ablation, pollution, large particle defects, etc., and achieve the effects of effective control, uniformity, and improvement of utilization efficiency
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specific Embodiment approach 1
[0020] Specific implementation mode one: the following combination Figure 1-3 Describe this embodiment, the arc ion plating device used in this embodiment combined magnetic field and lined bias straight tube composite filter includes bias power supply (1), arc power supply (2), arc ion plating target source (3), Multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), lined bias straight pipe device (6), lined bias power supply (7), movable coil device (8), movable coil device power supply (9) , a rheostat device (10), a sample stage (11), a bias power supply waveform oscilloscope (12) and a vacuum chamber (13);
[0021] In this device:
[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the liner bias straight tube device (6), the movable coil device (8) and the vacuum chamber (13 ) are insulated from each other, the workpiece is placed on the s...
specific Embodiment approach 2
[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0037] Specific embodiment three: the difference between this embodiment and embodiment two is that the combined magnetic field is connected to the arc ion plating of the liner bias straight tube compound type filter, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply (5 ) Adjust the multi-stage magnetic field device (4), turn on the lining bias power supply (7), the lining bias straight pipe device (6) maintains a DC positive bias, turn on the bias power supply (1), and turn on the power supply of the movable coil device ( 9) Adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform film deposition, and prepare multi-layer structure films with different stress states, microstructures and element ratios, and others are the same as in Embodiment 2 same.
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