Arc ion plating for composite filtering of combined magnetic field and lined special-shaped pipe and porous baffle
An arc ion plating and porous baffle technology, applied in the field of arc ion plating, can solve the problems of large particle defects, film component pollution, vacuum chamber space and deposition location limitations, etc., to achieve effective control, improve utilization efficiency, and ensure uniformity. sexual effect
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specific Embodiment approach 1
[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate the present embodiment. The arc ion plating device used in the present embodiment combines the magnetic field and the lined special-shaped tube and the porous baffle composite filter includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source. (3), multi-level magnetic field device (4), multi-level magnetic field power supply (5), lined bias conical tube, stepped tube and porous baffle combined device (6), lined bias power supply (7), movable Coil device (8), movable coil device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);
[0021] In this device:
[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the lining bias conical tube, the combination device of the ste...
specific Embodiment approach 2
[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field and the lined special-shaped tube are connected with the arc ion plating of the composite filter of the porous baffle, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on. (5) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), liner bias conical tube, stepped tube and porous baffle combination device (6) keep the DC positive bias, turn on the bias Power supply (1), turn on the movable coil device power supply (9), adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform thin film deposition, and prepare materials with different stress states, microstructures and element ratios The multilayer structure film, other is the same as embodiment two.
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