Arc ion plating for composite filtering of combined magnetic field and lined special-shaped pipe and porous baffle

An arc ion plating and porous baffle technology, applied in the field of arc ion plating, can solve the problems of large particle defects, film component pollution, vacuum chamber space and deposition location limitations, etc., to achieve effective control, improve utilization efficiency, and ensure uniformity. sexual effect

Pending Publication Date: 2019-07-09
魏永强
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Contamination of film components caused by secondary sputtering, combined with the multi-stage magnetic field filtering method and the composite effect of the mechanical barrier shielding of the lined bias conical tube, the stepped tube and the porous baffle device's own shape and the attraction of the bias electric field Eliminate the large particle defects contained in the arc plasma, and at the same time ensure that the arc plasma passes through the lined bias conical tube, the combination device of the stepped tube and the porous baffle and the multi-stage magnetic field filter device with high transmission efficiency, and then uses the movable coil The device controls the transmission direction of the arc plasma transmitted from the multi-stage magnetic field device and the combination device of the lined bias conical tube, stepped tube and porous baffle in the vacuum chamber, and realizes the film deposition on the surface of the substrate workpiece at any position in the vacuum chamber And the control and adjustment of the film composition, overcome the problem of uneven film deposition caused by the limitation of the deposition position caused by the vacuum chamber space and the layout design of the target source or the limitation of the substrate shape, and completely eliminate the problems from the multi-level magnetic field device and the lining bias conical tube, step Large particle defects may remain in the arc plasma transmitted from the combined device of the tube and the porous baffle, so that the ion energy can be adjusted on the surface of the workpiece under the condition of applying a negative bias voltage, and a continuous, dense and high-quality film can be prepared. Adding control of medium target element content, reducing the production cost of using alloy targets, improving the transmission efficiency of arc plasma, increasing the deposition rate of films and reducing or even eliminating the adverse effects of large particle defects on film microstructure, continuous dense deposition and performance , proposed a combined magnetic field and lined special-shaped tube and porous baffle compound filter arc ion plating

Method used

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  • Arc ion plating for composite filtering of combined magnetic field and lined special-shaped pipe and porous baffle
  • Arc ion plating for composite filtering of combined magnetic field and lined special-shaped pipe and porous baffle
  • Arc ion plating for composite filtering of combined magnetic field and lined special-shaped pipe and porous baffle

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate the present embodiment. The arc ion plating device used in the present embodiment combines the magnetic field and the lined special-shaped tube and the porous baffle composite filter includes a bias power supply (1), an arc power supply (2), and an arc ion plating target source. (3), multi-level magnetic field device (4), multi-level magnetic field power supply (5), lined bias conical tube, stepped tube and porous baffle combined device (6), lined bias power supply (7), movable Coil device (8), movable coil device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);

[0021] In this device:

[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the lining bias conical tube, the combination device of the ste...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field and the lined special-shaped tube are connected with the arc ion plating of the composite filter of the porous baffle, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply is turned on. (5) Adjust the multi-level magnetic field device (4), turn on the liner bias power supply (7), liner bias conical tube, stepped tube and porous baffle combination device (6) keep the DC positive bias, turn on the bias Power supply (1), turn on the movable coil device power supply (9), adjust the movable coil device (8), adjust the output resistance of the rheostat device (10), adjust the process parameters, perform thin film deposition, and prepare materials with different stress states, microstructures and element ratios The multilayer structure film, other is the same as embodiment two.

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Abstract

The invention provides arc ion plating for composite filtering of a combined magnetic field and a lined special-shaped pipe and a porous baffle, and belongs to the technical field of material surfacetreatment. The arc ion plating aims at solving the problems of contamination of large particles in a multi-stage magnetic field filtering device to thin films and losses generated in the plasma transmitting process. The arc ion plating involves a bias power supply, an arc ion plating target source, a multi-stage magnetic field device, a lined bias conical pipe, stepped pipe and porous baffle combination device, a movable coil device, corresponding power supplies, a bias power supply kymographion and the like. Thin film deposition is carried out, wherein the device is connected, a system is started, when the vacuum degree in a vacuum chamber is smaller than 10-4 Pa, working gas is introduced, a plating power supply is started, the energy of arc plasma is adjusted through the bias power supply, by means of the lined bias conical pipe, stepped pipe and porous baffle combination device and the multi-stage magnetic field device, large particle defects in the arc plasma are eliminated, the transmission efficiency of the filtering device is improved, losses in the vacuum chamber are reduced, process parameters are set, and thin films are prepared.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field and a composite filter of a special-shaped pipe lined with a porous baffle, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of larg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/56C23C14/35
CPCC23C14/325C23C14/3485C23C14/352C23C14/564
Inventor 魏永强王好平宗晓亚刘学申张新国蒋志强
Owner 魏永强
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